DIODE VR 1200V Search Results
DIODE VR 1200V Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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| CUZ24V |
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Zener Diode, 24 V, USC |
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| CUZ36V |
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Zener Diode, 36 V, USC |
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| CUZ20V |
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Zener Diode, 20 V, USC |
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| CUZ12V |
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Zener Diode, 12 V, USC |
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DIODE VR 1200V Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
|---|---|---|---|
HFA45HC120CContextual Info: PD-20375A HFA45HC120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V |
Original |
PD-20375A HFA45HC120C 675nC HFA45HC120C | |
HFA45HI120CContextual Info: PD-20374A HFA45HI120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V |
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PD-20374A HFA45HI120C 675nC HFA45HI120C | |
HFA35HB120Contextual Info: PD-20370 HFA35HB120 HEXFRED TM Ultrafast, Soft Recovery Diode Features • • • • • • VR = 1200V ISOLATED BASE Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets |
Original |
PD-20370 HFA35HB120 HFA35HB120 | |
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Contextual Info: SIDC81D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC81D120H8 VR IF |
Original |
SIDC81D120H8 L4061C, | |
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Contextual Info: SIDC53D120H8 Fast switching diode chip in Emitter Controlled -Technology Features: • 1200V Emitter Controlled technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type SIDC53D120H8 VR IF |
Original |
SIDC53D120H8 L4059C, | |
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Contextual Info: PD-20374A HFA45HI120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V |
Original |
PD-20374A HFA45HI120C 675nC device10) | |
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Contextual Info: PD-20375A HFA45HC120C TM HEXFRED Ultrafast, Soft Recovery Diode Features ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets VR = 1200V |
Original |
PD-20375A HFA45HC120C 675nC device10) | |
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Contextual Info: PD-20370A HFA35HB120 Ultrafast, Soft Recovery Diode FRED VR = 1200V Features • • • • • • Reduced RFI and EMI Reduced Snubbing Extensive Characterization of Recovery Parameters Hermetic Electrically Isolated Ceramic Eyelets vF = 3.1V Qrr = 510nC |
Original |
PD-20370A HFA35HB120 510nC 5M-1994. O-254AA. | |
HFA35HB120CContextual Info: PD-20371A PRELIMINARY TM HEXFRED HFA35HB120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets |
Original |
PD-20371A HFA35HB120C 370nC HFA35HB120C | |
HFA35HB120CContextual Info: PD - 20371A PRELIMINARY TM HEXFRED HFA35HB120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Electrically Isolated • Ceramic Eyelets |
Original |
0371A HFA35HB120C 370nC HFA35HB120C | |
IRFP250 pin out
Abstract: HFA35HB120 IRFP250 PD-20370A
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PD-20370A HFA35HB120 510nC 5M-1994. O-254AA. IRFP250 pin out HFA35HB120 IRFP250 PD-20370A | |
SIDC06D120F6Contextual Info: Preliminary SIDC06D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120F6 1200V IF C Applications: |
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SIDC06D120F6 Q67050-A4183A001 4345M, SIDC06D120F6 | |
SIDC06D120E6Contextual Info: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications: |
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SIDC06D120E6 Q67050-A4122A001 4342P, SIDC06D120E6 | |
1200v 3A
Abstract: SIDC03D120H6
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SIDC03D120H6 Q67050-A4156A001 4372S, 1200v 3A SIDC03D120H6 | |
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SIDC03D120F6Contextual Info: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications: |
Original |
SIDC03D120F6 Q67050-A4168A001 4375M, SIDC03D120F6 | |
SIDC08D120F6Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications: |
Original |
SIDC08D120F6 Q67050-A4169A001 4355M, SIDC08D120F6 | |
SIDC08D120F6Contextual Info: Preliminary SIDC08D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC08D120F6 1200V IF C Applications: |
Original |
SIDC08D120F6 Q67050-A4169A001 4355M, SIDC08D120F6 | |
SIDC06D120E6Contextual Info: Preliminary SIDC06D120E6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 130 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC06D120E6 1200V IF C Applications: |
Original |
SIDC06D120E6 Q67050-A4122A001 4342P, SIDC06D120E6 | |
HFA40HF120CContextual Info: PD - 91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC |
Original |
HFA40HF120C 370nC dev10) HFA40HF120C | |
HFA40HF120CContextual Info: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC |
Original |
PD-91797 HFA40HF120C 370nC HFA40HF120C | |
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Contextual Info: PD-91797 PRELIMINARY TM HEXFRED HFA40HF120C Ultrafast, Soft Recovery Diode Features VR = 1200V ISOLATED BASE • Reduced RFI and EMI • Reduced Snubbing • Extensive Characterization of Recovery Parameters • Hermetic • Surface Mount VF = 4.46V Qrr = 370nC |
Original |
PD-91797 HFA40HF120C 370nC | |
SIDC03D120F6Contextual Info: Preliminary SIDC03D120F6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120F6 1200V IF C Applications: |
Original |
SIDC03D120F6 Q67050-A4168A001 4375M, SIDC03D120F6 | |
SIDC03D120H6Contextual Info: Preliminary SIDC03D120H6 Fast switching diode chip in EMCON-Technology FEATURES: • 1200V EMCON technology 120 µm chip • soft, fast switching • low reverse recovery charge • small temperature coefficient Chip Type VR SIDC03D120H6 1200V IF C Applications: |
Original |
SIDC03D120H6 Q67050-A4156A001 4372S, SIDC03D120H6 | |
HFA40HF120
Abstract: PD203
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PD-20376 HFA40HF120 HFA40HF120 PD203 | |