DIODE WE 84A Search Results

Contextual Info: PD - 94965B IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

Contextual Info: PD - 94965B IRF1010EPbF HEXFET Power MOSFET l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

Contextual Info: PD - 94965 IRF1010EPbF l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 60V RDS on = 12mΩ G ID = 84A‡ S Description

AT64A

Abstract: 0965 TRANSISTOR PE53188 United Chemi-Con series PE-53188 ablebond Ablebond 84-1 LMIT EL75XX PE-5318 intel 2758
Contextual Info: Designing a High Efficiency DC-DC Converter with the EL75XX by Mike Wong Table of Contents Since the beginning of the digital revolution the speed of a microprocessor has been governed by Moore’s law postulated in 1968 by Intel’s cofounder Gorden Moore Moore suggested that the

2N03L08

Abstract: SPP73N03S2L-08 smd diode 36A smd diode 434 36A SPB73N03S2L-08 DIODE smd 434 2N03L08 2N03L08
Contextual Info: SPP73N03S2L-08 SPB73N03S2L-08 Preliminary data OptiMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level  Excellent Gate Charge x RDS on product (FOM) VDS 30 RDS(on) 8.4 m
ID 73 A P-TO263-3-2 V P-TO220-3-1
Superior thermal resistance

AN-994

Abstract: IRF1010EL IRF1010ES IRF530S
Contextual Info: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V

Contextual Info: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V

AN-994

Abstract: IRF1010EL IRF1010ES IRF530S IRF1010ELPBF
Contextual Info: PD - 95444 Advanced Process Technology l Surface Mount IRF1010ES l Low-profile through-hole (IRF1010EL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRF1010ESPbF IRF1010ELPbF l HEXFET Power MOSFET D VDSS = 60V

AN-994

Abstract: IRF1010EZ IRF1010EZL IRF1010EZS
Contextual Info: PD - 95483 AUTOMOTIVE MOSFET Features O Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax O Lead-Free O O O O O IRF1010EZPbF IRF1010EZSPbF IRF1010EZLPbF

EIA-541

Contextual Info: PD - 96115A IRF9952QPbF l l l l l l l HEXFET Power MOSFET Advanced Process Technology Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel 150°C Operating Temperature Lead-Free S1 N-CHANNEL MOSFET 1 8 G1 2 7 D1 S2 3

Contextual Info: SS2P5, SS2P6 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.1 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: SS2PH9, SS2PH10 www.vishay.com Vishay General Semiconductor High Voltage Surface Mount Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available

Contextual Info: SS1P3L, SS1P4L www.vishay.com Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: SS2P2L, SS2P3L www.vishay.com Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: SS2P2, SS2P3, SS2P4 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement eSMP Series • Low forward voltage drop, low power losses

Contextual Info: ES1PB, ES1PC, ES1PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SS2P2L, SS2P3L www.vishay.com Vishay General Semiconductor Low VF High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: SS3P3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: ESH1PB, ESH1PC, ESH1PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement eSMP Series • Glass passivated pallet chip junction

Contextual Info: SS1P5L, SS1P6L www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifier FEATURES • Very low profile - typical height of 1.0 mm eSMP Series • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: ESH2PB, ESH2PC, ESH2PD www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Ultrafast Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Glass passivated chip junction

Contextual Info: SS3P3 www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Schottky Barrier Rectifiers FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available • Ideal for automated placement • Low forward voltage drop, low power losses

Contextual Info: SS2PH9, SS2PH10 www.vishay.com Vishay General Semiconductor High Voltage Surface Mount Schottky Barrier Rectifier High Barrier Technology for Improved High Temperature Performance FEATURES • Very low profile - typical height of 1.0 mm eSMP Series Available

Contextual Info: RS1PB, RS1PD, RS1PG, RS1PJ www.vishay.com Vishay General Semiconductor High Current Density Surface Mount Glass Passivated Fast Switching Rectifier FEATURES eSMP Series • Very low profile - typical height of 1.0 mm Available • Ideal for automated placement