DIODE WG Search Results

LTC4358

Abstract: LTC4252-2A LTC4358CFE MARKING TRANSISTOR BD RC marking g02 tssop FE16 n channel mosfet marking Bc B530C LTC4358C LTC4358CDE
Contextual Info: LTC4358 5A Ideal Diode FEATURES DESCRIPTION n The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

Contextual Info: LTC4358 5A Ideal Diode FEATURES n n n n n n n DESCRIPTION The LTC 4358 is a 5A ideal diode that uses an internal 20mΩ N-channel MOSFET to replace a Schottky diode when used in diode-OR and high current diode applications. The LTC4358 reduces power consumption, heat

MOZ 23

Abstract: DD1000S33HE3 48 H diode
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

DD1000S33

Abstract: FZ1000R33HE3
Contextual Info: Technische Information / technical information DD1000S33HE3 IGBT-Module IGBT-modules IHM-B Modul mit Emcon3 Diode IHM-B module with Emcon3 diode Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values

Contextual Info: wgm j SRDA3.3-4 • ,■.» -." Preliminary - April 1, 1998 RailClamp Low Capacitance TVS Diode Array THRU SRDA12-4 TEL:805-498-2111 FAX:805-498-3804 W EB:http://www.semtech.com DESCRIPTION FEATURES RailClamps are surge rated diode arrays designed to

UAF41

Abstract: CDA 5,5 Mc CDA 5.5 MC alim H242 551-va
Contextual Info: UAF41 DIODE-PENTODE with variable mutual conductance for use as H.F., I.F. and L.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. et B.F. DIODE-PENTHODE mit veränderlicher Steilheit zur Ver­ wendung als H.F.-, Z.F.- und H.F. Verstärker

DAF401

Contextual Info: PHILIPS IDÄF4Ö DIODE-PENTODE for use as R.F. or I.F. amplifier in battery receivers DIODE-PENTHODE pour l'utilisation comme amplifica­ trice H.F. ou M.F. dans des apareils-batterie DIODE-PENTODE zur Verwendung als HF- oder ZF- Ver­ stärker in Batteriegeräten

EBL21

Abstract: UBL21 AC/DC tig UBL Series
Contextual Info: U B L 21 UBL 21 D o u b le diode o u tp u t p e n to d e The UBL 21, designed for use in AC/DC receivers and taking a max29 heater current of 100 mA, comprises a double diode and a verysensitive 11 W att output pentode. The diode and pentode sections employ a common cathode and the two diode anodes are both situated

EAF42

Abstract: ech41 philips EAF 42 ECH 42 philips diagram fr 310 Philips schema philips fr 310 RG211 ECH42 390SV
Contextual Info: IËÂF42 PHILIPS DIODE-PENTODE with variable mutual conductance for use as R.F., I.F. or A.F. amplifier DIODE-PENTHODE à pente variable pour l'utilisation comme amplificatrice H.F., M.F. ou B.F. DIODE-PENTODE mit veränderlicher Steilheit zur Ver­ wendung als HF-, ZF- oder NF-Verstärker

diode wg 599

Abstract: WR-22 8 GHz waveguide circulator 710232 WR22 RF CIRCULATOR
Contextual Info: SPST and SPDT PIN Diode Switches 18-110 GHz 7 WG 231/232 Series SMA FEMALE Features • ■ ■ ■ ■ Low Loss High Isolation Fast Switching Compact Package Optional Integral Driver T i B Description This series of SPST and SPDT PIN diode switches is available in seven

LTC4416

Contextual Info: LTC4353 Dual Low Voltage Ideal Diode Controller FEATURES n n n n n n n DESCRIPTION The LTC 4353 controls external N-channel MOSFETs to implement an ideal diode function. It replaces two high power Schottky diodes and their associated heat sinks, saving power and board area. The ideal diode function

transistor lt 2815

Contextual Info: LTC4085 USB Power Manager with Ideal Diode Controller and Li-Ion Charger DESCRIPTION FEATURES n n n n n n n n n n Seamless Transition Between Input Power Sources: Li-Ion Battery, USB and 5V Wall Adapter 215mΩ Internal Ideal Diode Plus Optional External Ideal Diode Controller Provide Low Loss PowerPath

5B12

Abstract: FP50R06W2E3 WG01 KT4I
Contextual Info: Technische Information / technical information FP50R06W2E3_B11 IGBT-Module IGBT-modules EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

C532 diode

Abstract: b16/41289
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FP50R06W2E3_B11 EasyPIM 2B Modul PressFIT mit Trench/Feldstopp IGBT3 und Emitter Controlled3 Diode EasyPIM™2B module PressFIT with trench/fieldstop IGBT3 and Emitter Controlled3 Diode

DIODE WJ SOD323

Abstract: BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S BZT52C3V0S BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S
Contextual Info: BL Galaxy Electrical Production specification Surface mount zener diode FEATURES BZT52C2V0S-BZT52C39S Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode.

IHW20N120R3

Abstract: j127 H63-1 9P127 E393 h631 wg 2 fk
Contextual Info: IHW20N120R3 IH-series Reverse conducting IGBT with monolithic body diode C Features: • Powerful monolithic body diode with low forward voltage designed for soft commutation only • TrenchStop technology applications offers: - very tight parameter distribution

DDB6U25N16VR

Abstract: 76w9
Contextual Info: Technische Information / technical information DDB6U25N16VR IGBT-Module IGBT-modules Diode-Gleichrichter / diode-rectifier Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! "# $ " 1 &' *+, 23 % " # 4$ 2 5 2 2 # 3 2 52 2

FF200R12MT4

Contextual Info: Technische Information / technical information FF200R12MT4 IGBT-Module IGBT-modules EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode IGBT-Wechselrichter / IGBT-inverter

BT 69D

Abstract: FBC 320
Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules FF200R12MT4 EconoDUAL 2 Modul mit schnellem Trench/Feldstop IGBT4 und Emitter Controlled4 Diode EconoDUAL™2 module with fast trench/fieldstop IGBT4 and Emitter Controlled4 diode Vorläufige Daten / preliminary data

DIODE WJ SOD323

Abstract: BZT52C3V3S BZT52C3V6S BZT52C3V9S BZT52C4V3S BZT52C4V7S BZT52C2V0S BZT52C2V0S-BZT52C39S BZT52C2V4S BZT52C2V7S
Contextual Info: Surface mount zener diode BZT52C2V0S-BZT52C39S FEATURES Pb z z Planar die construction. General purpose, medium current. z Ideally suited for automated assembly processes. Lead-free APPLICATIONS z z Zener diode. Ultra-small surface mount package. SOD-323 ORDERING INFORMATION

Contextual Info: LM185-2.5QML LM185-2.5QML Micropower Voltage Reference Diode Literature Number: SNVS385 LM185-2.5QML Micropower Voltage Reference Diode General Description The LM185-2.5 are micropower 2-terminal band-gap voltage regulator diodes. Operating over a 20 µA to 20 mA current

Contextual Info: LM185-1.2QML LM185-1.2QML Micropower Voltage Reference Diode Literature Number: SNVS384 LM185-1.2QML Micropower Voltage Reference Diode General Description The LM185-1.2 is a micropower 2-terminal band-gap voltage regulator diodes. Operating over a 10µA to 20mA current

Contextual Info: Technische Information / technical information IGBT-Module IGBT-modules DDB6U25N16VR Vorläufige Daten / preliminary data Diode-Gleichrichter / diode-rectifier Höchstzulässige Werte / maximum rated values A325EF36!F"#6$1B%3DE1322E14DDD &' 6 6*+,

LTC4088

Abstract: NTHS0603N01N1003 usb softconnect
Contextual Info: LTC4088 High Efficiency Battery Charger/USB Power Manager Description Features Switching Regulator Makes Optimal Use of Limited Power Available from USB Port to Charge Battery and Power Application n 180mΩ Internal Ideal Diode Plus Optional External Ideal Diode Controller Seamlessly Provides Low