DIODE WSS Search Results

W1A 73

Abstract: Diode LT 410 ic tms 1000 81 210 W 20 w1A 49 W1A 95 dt61n dt250n
Contextual Info: Thyristor-Dioden-Module für l-Umrichter Thyristor-diode-modules for current source inverters Modules thyristor-diode pour convertisseurs à circuit intermédiaire à courant continu Typ Type V drm It r m s m Itsm / ¡ 2d t Itavm /I c V TO Tt ( d i/ d t ) cr

Contextual Info: ZOWIE Schottky Barrier Diode 20V~100V / 1.0A WSSCD102SH THRU WSSCD110SH FEATURES OUTLINE DIMENSIONS Halogen-free type Lead free product, compliance to RoHS Lead less chip form, no lead damage Lead-free solder joint, no wire bond & lead frame Low power loss, High efficiency

Contextual Info: SKN 135F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <UVPSW $>B <UVPSW $>? <UVP<S $>B <UVP<S <=SS <=SS $>? <UVP<= Symbol Conditions

Contextual Info: SKN 136F THYRISTOR BRIDGE,SCR,BRIDGE Stud Diode OB$; OBB; O WSS <SSS O WSS <SSS CPB;$ Q =RS G L%&T4%9% ,&'9 0+ *+81489+95 +F)(&14+8N CPGO Q <UV G L548H <WSA <SSS 3XA :* Q <SS YIN $>? <URPSW $>B <URPSW $>? <URP<S $>B <URP<S <=SS <=SS $>? <URP<= Symbol Conditions

Contextual Info: SCHOTTKY BARRIER DIODE 11DQ05 11DQ06 1.1A/50— 60V FEATURES “ Miniature Size ° Low Forward Voltage Drop ° Low Power Loss, High Efficiency ° High Surge Capability ° 30 Volts through 100 Volts Types Available ° 52mm Inside Tape Spacing Package Available

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

FM6L5202

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FM6L5202 Silicon N-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For switching circuits For DC-DC converter circuits • Overview  Package FM6L5202 is N-channel type MOS FET with Schottky Brrier Diode in small

FL6L5203

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . FL6L5203 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter circuits For switching circuits • Overview  Package FL6L5203 is P-channel type MOS FET with Schottky Brrier Diode in small

"Darlington Transistor"

Contextual Info: MJD122 NPN SILICON DARLINGTON TRANSISTOR DPAK FOR SURFACE MOUNT APPLICATIONS • • • • • D-PAK High DC C urrent Gain Built-in a D am per Diode a t E-C Lead Formed fo r Surface M ount Applications No Suffix Straight Lead (I. PACK, “ - 1" Suffix)

kl 04 diode

Contextual Info: SK 15 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper O$PQ B$ B$UV OCPQ @-J KLM$N 407,- %*8,23.-, -', .6.,+ @- J KL <TS? M$ B$UVJ K ; B$0%&N *' J R &- @Y Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86628 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Overview  Features  Built-in schottky barrier diode: VR = 15 V, IF = 700 mA

Contextual Info: SK 10 DGDL 126 ET CONVERTER, INVERTER, BRAKE Absolute Maximum Ratings Symbol Conditions IGBT - Inverter, Chopper O$PQ B$ B$UV OCPQ @-J KLM$N 407,- %*8,23.-, -', .6.,+ @- J KL <TS? M$ B$UVJ K ; B$0%&N *' J R &- @Y Diode - Inverter, Chopper SEMITOP 3 3-phase bridge rectifier +

free transistor equivalent book 2sc

Abstract: uPA1556AH The Japanese Transistor Manual 1981 samsung UHF/VHF TV Tuner MOSFET cross-reference 2sk PD431000A-X upper arm digital sphygmomanometer circuit diagram PD72001 uPC1237 uPC 2002
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 RF and Microwave Devices 7 Optical Device 8 Index 9 April 1999 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

C67078-A1103-A2

Abstract: V103 DIN 41872 kbs 005
Contextual Info: s a t D • 823ShO S 1 001413b sao 14936 O H S IE 6 BUZao r-s y -1 3 SIEMENS A K TI EN GE SE LL SCH AF Main ratings N-Channel Draln-source voltage Voa Continuous drain current Draln-source on-reslstance ^DS Ofl Description Case 800 V 6.5 A 1.5 í l FREDET with fast-recovery reverse diode, N-channel, enhancement mode

Contextual Info: E S A C 8 2 M - 0 4 1 0 A * ± 'h * a * - r 3 i— K ^ 3 ‘y h + — ^ x Y 7 ¥ ^ ^ t —K : Outline Drawings SCHOTTKY BARRIER DIODE : Features In su la ted packa g e by fu lly m o ld in g • “(SVf Low V F • • x -r n m Connection Diagram x e - F * * # * ta v .'

16MQ40

Abstract: ajw 35
Contextual Info: SCHOTTKY BARRIER DIODE 16MQ30 16MQ40 16.6A/30— 40V FEATU RES ° H e r m e t i c a l l y S e a l e d C ase ° High Reliability Device ' L o w F o r w a r d P o w e r Loss, High Efficiency » High Surge Capability ° 30 V o l t s t h r o u g h 60 V o l t s T y p e s A v a i l a b l e

Contextual Info: Emphasizing efficiency while contributing to end product miniaturization MTM86XXX Power Management MOSFET Series „ Overview These devices are power management MOSFETs that are optimal for mobile equipment such as cell phones and that adopt the newlydeveloped WSSMini6-F1 ultraminiature package 1.6 x 1.6 mm .

MTM86628

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86628 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Code WSSMini6-F1  Pin Name 1: Gate

MTM86627

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Multi Chip Discrete MTM86627 Silicon P-channel MOS FET (FET) Silicon epitaxial planar type (SBD) For DC-DC converter For switching circuits • Package  Code WSSMini6-F1  Pin Name 1: Gate

MTM86227

Abstract: MTM86727 IR CLASS D Applications mosfet power class d sbd diode S mosfet class d MTM86927
Contextual Info: Emphasizing efficiency while contributing to end product miniaturization MTM86XXX Power Management MOSFET Series „ Overview These devices are power management MOSFETs that are optimal for mobile equipment such as cell phones and that adopt the newlydeveloped WSSMini6-F1 ultraminiature package 1.6 x 1.6 mm .

Contextual Info: Emphasizing efficiency while contributing to end product miniaturization MTM86XXX Power Management MOSFET Series „ Overview These devices are power management MOSFETs that are optimal for mobile equipment such as cell phones and that adopt the newlydeveloped WSSMini6-F1 ultraminiature package 1.6 x 1.6 mm .