DIODE YF Search Results

CL67

Abstract: 32MHz quartz RESONATOR 550KQ
Contextual Info: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output

Contextual Info: 4V Drive Nch+SBD MOSFET ES6U3 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode.

Contextual Info: 4V Drive Nch+SBD MOSFET ES6U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm WEMT6 Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode.

Contextual Info: Technische Information / technical information DZ3600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! " # / /* " 1 " $%& ' * +,- 6 27 1 " 5' +, '

MCH3314

Abstract: SCH2805
Contextual Info: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)

Contextual Info: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)

MCH3447

Abstract: MCH5824 marking xa
Contextual Info: MCH5824 Ordering number : ENN8201 MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3447 and a schottky barrier diode (SS05015)

SCH1406

Abstract: SCH2806
Contextual Info: SCH2806 Ordering number : ENN7744 SCH2806 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1406 and a Schottky barrier diode (SBS018)

BAX12

Abstract: 74127
Contextual Info: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic

MCH3456

Abstract: MCH5826 SS05015SH
Contextual Info: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)

TA-3101

Contextual Info: CPH5803 Ordering number : ENN6935A CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)

CPH3309

Abstract: CPH5835 MCH5835 SBS010M
Contextual Info: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained

SCH2807

Abstract: MARKING QG
Contextual Info: SCH2807 Ordering number : ENN8215 SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1407 and a schottky barrier diode (SS05015)

MCH3339

Abstract: MCH5823 SS10015M
Contextual Info: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)

3N172

Abstract: 3N172-73 3N173 X3N172-73
Contextual Info: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage

CPH5802

Contextual Info: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)

marking 4F

Abstract: 4FV diode DIODE 3FV 60 3fv 60 9p marking
Contextual Info: SEMICONDUCTOR KDZ2.0FV~36FV TECHNICAL DATA ZENER DIODE SILICON EPITAXIAL PLANAR DIODE CONSTANT VOLTAGE REGULATION APPLICATION. REFERENCE VOLTAGE APPLICATION. CATHODE MARK C D FEATURES ・Small Package : TFSC ・Sharp Breakdown Characteristic. B A E MAXIMUM RATING Ta=25℃

Contextual Info: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)

SCH1417

Abstract: SCH2817 SS05015SH TB-00001069
Contextual Info: SCH2817 Ordering number : ENN8155 SCH2817 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1417 and a Schottky Barrier Diode (SS05015SH)

SCH2816

Abstract: SCH1416
Contextual Info: SCH2816 Ordering number : ENN8080 SCH2816 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET SCH1416 and a Schottky barrier diode (SS05015)

SCH1412

Abstract: SCH2812 SS05015SH
Contextual Info: SCH2812 Ordering number : ENN8105 SCH2812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET SCH1412 and a Schottky barrier diode (SS05015SH)

SCH2819

Abstract: SCH1419
Contextual Info: SCH2819 Ordering number : ENN8291 SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)

SCH1412

Abstract: SCH2808
Contextual Info: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)

D1004

Abstract: MCH3405 MCH5811 SS10015M
Contextual Info: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)