Untitled
Abstract: No abstract text available
Text: 4V Drive Nch+SBD MOSFET ES6U3 zDimensions Unit : mm zStructure Silicon N-channel MOSFET / Schottky barrier diode WEMT6 zFeatures 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode.
|
Original
|
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: 4V Drive Nch+SBD MOSFET ES6U3 Structure Silicon N-channel MOSFET / Schottky barrier diode Dimensions Unit : mm WEMT6 Features 1) Nch MOSFET and schottky barrier diode are put in WEMT6 package. 2) High-speed switching, Low On-resistance. 3) Built-in Low VF schottky barrier diode.
|
Original
|
R0039A
|
PDF
|
Untitled
Abstract: No abstract text available
Text: Technische Information / technical information DZ3600S17K3_B2 IGBT-Module IGBT-modules Diode-Wechselrichter / diode-inverter Vorläufige Daten / preliminary data Höchstzulässige Werte / maximum rated values ! " # / /* " 1 " $%& ' * +,- 6 27 1 " 5' +, '
|
Original
|
DZ3600S17K3
|
PDF
|
MCH3314
Abstract: SCH2805
Text: SCH2805 Ordering number : ENN7760 SCH2805 Features MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
|
Original
|
SCH2805
ENN7760
MCH3314)
SB0105)
MCH3314
SCH2805
|
PDF
|
Untitled
Abstract: No abstract text available
Text: SCH2805 SCH2805 Features Ordering number : ENN7760 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Composite type with a P-channel sillicon MOSFET MCH3314 and a Schottky barrier diode (SB0105)
|
Original
|
SCH2805
ENN7760
MCH3314)
SB0105)
SCH2805/D
|
PDF
|
MCH3447
Abstract: MCH5824 marking xa
Text: MCH5824 Ordering number : ENN8201 MCH5824 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET MCH3447 and a schottky barrier diode (SS05015)
|
Original
|
MCH5824
ENN8201
MCH3447)
SS05015)
MCH3447
MCH5824
marking xa
|
PDF
|
SCH1406
Abstract: SCH2806
Text: SCH2806 Ordering number : ENN7744 SCH2806 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1406 and a Schottky barrier diode (SBS018)
|
Original
|
SCH2806
ENN7744
SCH1406)
SBS018)
SCH1406
SCH2806
|
PDF
|
MCH3456
Abstract: MCH5826 SS05015SH
Text: MCH5826 Ordering number : ENN8163 MCH5826 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a N-Channel Silicon MOSFET MCH3456 and a Schottky Barrier Diode (SS05015SH)
|
Original
|
MCH5826
ENN8163
MCH3456)
SS05015SH)
MCH3456
MCH5826
SS05015SH
|
PDF
|
TA-3101
Abstract: No abstract text available
Text: CPH5803 Ordering number : ENN6935A CPH5803 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-Channel Sillicon MOSFET MCH3405 and a Schottky Barrier Diode (SBS004M)
|
Original
|
ENN6935A
CPH5803
MCH3405)
SBS004M)
TA-3101
|
PDF
|
CPH3309
Abstract: CPH5835 MCH5835 SBS010M
Text: CPH5835 Ordering number : ENN8207 CPH5835 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features Composite type with a P-Channel Sillicon MOSFET CPH3309 and a Schottky Barrier Diode (SBS010M) contained
|
Original
|
CPH5835
ENN8207
CPH3309)
SBS010M)
CPH3309
CPH5835
MCH5835
SBS010M
|
PDF
|
SCH2807
Abstract: MARKING QG
Text: SCH2807 Ordering number : ENN8215 SCH2807 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with an N-channel silicon MOSFET SCH1407 and a schottky barrier diode (SS05015)
|
Original
|
SCH2807
ENN8215
SCH1407)
SS05015)
SCH2807
MARKING QG
|
PDF
|
MCH3339
Abstract: MCH5823 SS10015M
Text: MCH5823 Ordering number : ENN7757 MCH5823 MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • Composite type with a P-Channel Silicon MOSFET MCH3339 and a Schottky Barrier Diode (SS10015M)
|
Original
|
MCH5823
ENN7757
MCH3339)
SS10015M)
MCH3339
MCH5823
SS10015M
|
PDF
|
3N172
Abstract: 3N172-73 3N173 X3N172-73
Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch LLC 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage
|
Original
|
3N172
3N173
3N172.
3N173.
200ns
DS020
3N172-73
3N173
X3N172-73
|
PDF
|
3N172
Abstract: 3N172-73 3N173 X3N172-73
Text: Diode Protected P-Channel Enhancement Mode MOSFET General Purpose Amplifier/Switch CORPORATION 3N172 / 3N173 FEATURES ABSOLUTE MAXIMUM RATINGS TA = 25oC unless otherwise specified • High Input Impedance • Diode Protected Gate Drain-Source or Drain-Gate Voltage
|
Original
|
3N172
3N173
3N172.
3N173.
-10mA
200ns
3N172-73
3N173
X3N172-73
|
PDF
|
|
|
Untitled
Abstract: No abstract text available
Text: SCH2819 SCH2819 Ordering number : ENN8291 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)
|
Original
|
SCH2819
ENN8291
SCH1419)
SS0503)
SCH2819/D
|
PDF
|
SCH1417
Abstract: SCH2817 SS05015SH TB-00001069
Text: SCH2817 Ordering number : ENN8155 SCH2817 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1417 and a Schottky Barrier Diode (SS05015SH)
|
Original
|
SCH2817
ENN8155
SCH1417)
SS05015SH)
SCH1417
SCH2817
SS05015SH
TB-00001069
|
PDF
|
SCH2816
Abstract: SCH1416
Text: SCH2816 Ordering number : ENN8080 SCH2816 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel silicon MOSFET SCH1416 and a Schottky barrier diode (SS05015)
|
Original
|
SCH2816
ENN8080
SCH1416)
SS05015)
SCH2816
SCH1416
|
PDF
|
SCH1412
Abstract: SCH2812 SS05015SH
Text: SCH2812 Ordering number : ENN8105 SCH2812 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET SCH1412 and a Schottky barrier diode (SS05015SH)
|
Original
|
SCH2812
ENN8105
SCH1412)
SS05015SH)
SCH1412
SCH2812
SS05015SH
|
PDF
|
SCH2819
Abstract: SCH1419
Text: SCH2819 Ordering number : ENN8291 SCH2819 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-Channel Silicon MOSFET SCH1419 and a Schottky Barrier Diode (SS0503)
|
Original
|
SCH2819
ENN8291
SCH1419)
SS0503)
SCH2819
SCH1419
|
PDF
|
SCH1412
Abstract: SCH2808
Text: SCH2808 Ordering number : ENN8360 SCH2808 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with an N-channel sillicon MOSFET SCH1412 and a schottky barrier diode (SS0503)
|
Original
|
SCH2808
ENN8360
SCH1412)
SS0503)
SCH1412
SCH2808
|
PDF
|
D1004
Abstract: MCH3405 MCH5811 SS10015M
Text: MCH5811 Ordering number : ENN8059 MCH5811 MOSFET : N-Channel Silicon MOSFET SBD : Schottky Barrier Diode General-Purpose Switching Device Applications Features • • • Composite type with a N-channel sillicon MOSFET MCH3405 and a schottky barrier diode (SS10015M)
|
Original
|
MCH5811
ENN8059
MCH3405)
SS10015M)
D1004
MCH3405
MCH5811
SS10015M
|
PDF
|
CL67
Abstract: 32MHz quartz RESONATOR 550KQ
Text: iC-VJ, iC-VJZ •Haus LASER DIODE CONTROLLER FEATURES APPLICATIONS ♦ ♦ ♦ ♦ ♦ ♦ Laser diode driver up to 250mA Averaging control of laser power Protective functions to prevent destruction of laser diode Laser-current monitor with current or voltage output
|
OCR Scan
|
250mA
500/iA
CL67
32MHz quartz RESONATOR
550KQ
|
PDF
|
BAX12
Abstract: 74127
Text: BAX 12 'W Silizium-Epitaxial-Planar-Diode Silicon epitaxial planar diode Anwendungen: Schutzdiode in F ernsprechverm ittlungsanlagen Applications: Protection d io d e in telephone sw itching systems Features: Besondere Merkmale: • C ontrolled avalanche characteristic
|
OCR Scan
|
BAX12
BAX12
74127
|
PDF
|
CPH5802
Abstract: No abstract text available
Text: Ordering number : ENN6899 | MOSFET : P-Channel Silicon MOSFET SBD : Schottky Barrier Diode CPH5802 DC / DC Converter Applications Package Dimensions Features • Composite type with a P-Channel Sillicon MOSFET M CH3306 and a Schottky Barrier Diode (SBS004)
|
OCR Scan
|
ENN6899
CPH5802
CH3306)
SBS004)
CPH5802]
|
PDF
|
