DIODE ZD 33 Search Results

diode zd 33

Abstract: yy12
Contextual Info: #| v v tc .„ c Value the Customer V M 333 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER PRELIMINARY FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 1.1 nV/VHz maximum - Input capacitance = 20pF maximum

Diode KD 514

Abstract: B30C250 GD507A DIODE OA-172 kyx 28 SY360 ky 202 h thyristor B280C1500 C5000-3300 BZY79C
Contextual Info: Deutsche Post Studiotechnik Fernsehen BauelementeMitteilunq Nr.7 Diodenvergleichsliste Verfasser: Dipl.-Ing. Klaus-Peter Hartmann Abteilung PMM Herausgeber: \>y Studiotechnik Fernsehen Informationsstelle RIS 1429 1 19 9 Berlin Rudower Chaussee 3 Fernruf: 6 7 3 3381

WT 7520

Abstract: diode lt 8220 SAC 1630 L saa 1070 tic125 tsumu T920 thyristor GE 1780 scr 3f scr thyristor power diode 1000 volt 700 amper
Contextual Info: POWER SEMICONDUCTORS IN C 1TE D • 72^14^0 D0003b4 1 ■ POS "T-Ol-01 T'-ZS-C>| D PACK THYRISTOR POWER PACK TH YR ISTO R S 28mm. <25 mm.) RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature

VM312

Abstract: DIODE H5y VM312-8PMJ VM3128
Contextual Info: V T C In c. V a lu e th e C u s to m e r VM312 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1992 TWO-TERMINAL READ/WRITE PR E A M PS FEATURES • High Performance: - Read mode gain = 150V/V - Low input noise = 0.8nVA/Hz maximum

zd2500

Abstract: WT 7520 CS 601 thyristor TIC125 T920 thyristor power diode 1000 volt 700 amper thyristor 100 amper diode lt 8220 cs 1694 eo saa 1070
Contextual Info: POWER SEMICONDUCTORS INC 1TE D • 7 2 ^ 1 4 ^ 0 D0003b4 1 ■ POS " T -O l-0 1 T '- Z S - C > | RMS Forward Current Ave. Forward Current Peak One-Cycle Surge @ 8.3 ms I 2 t @ 8.3 ms Forward Voltage Drop Max. Operating Temperature Symbol Units ' t RMS

DIODE H5X

Abstract: diode zd 33 DIODE H5y diode zd 12
Contextual Info: E v ie n e Y I2 J 2 E : - V M 3 1 2 10-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER July, 1993 FEATURES • The VM312 is a1high-perform ance, low-power, bipolar mono­ lithic read / write pream plifier designed for use with twoterminal thin-film recording heads. It provides write current

Contextual Info: WÉÊ VTC Inc. Value the Customer VM7100 2, 4 O R 8-CHANNEL, 5-VOLT, THIN-FILM HEAD, READ/W RITE PR EA M PLIFIE R PRELIMINARY FEATURES D ESCRIPTIO N The VM7100 is a high-performance, very low-power read/ write preamplifier designed for use with external 2-terminal,

TC74HC40102

Abstract: 74HC40103
Contextual Info: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC401Q3P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER_ The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology.

37400

Abstract: 627 DIODE ZD 222 D-68623 HTZ180D22K HTZ180D26K HTZ180D30K HTZ180D35K
Contextual Info: HTZ180D Series LARONTROL High Voltage Diode Rectifier Module IF AV = 1.3 A VRRM = 35000 V Type Number Repetitive Peak Minimum Avalanche Voltage V(BR)R HTZ180D35K HTZ180D30K HTZ180D26K HTZ180D22K 35000 30000 26000 22000 37400 33000 28600 24200 CIRCUIT DIAGRAM

Contextual Info: VBUS054B-HSF Vishay Semiconductors 4-Line BUS-port ESD-Protection FEATURES 6 5 4 • Ultra compact LLP75-6L package • Low package height < 0.6 mm • 4-line USB ESD-protection • Low leakage current 20397 1 2 3 • Low load capacitance CD = 0.8 pF 20453

Contextual Info: VBUS054B-HSF Vishay Semiconductors 4-Line BUS-port ESD-Protection FEATURES • Ultra compact LLP75-6L package • Low package height < 0.6 mm • 4-line USB ESD-protection • Low leakage current • Low load capacitance CD = 0.8 pF 20453 • ESD-protection acc. IEC 61000-4-2

74HC40103

Contextual Info: TQSHIEA L OGIC/MEMORY 14E D I Q01ÛS76 T | _ TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER The TC74HC40102 and TC74HC401O3 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2M0S technology.

Contextual Info: 4DE D S BMRTTBfl 0D01i025 b E3SENI T '4 H FASCO INDS/ SENISYS CLED1 CLED1A CLED1B CLED1C Gallium Arsenide Infrared Emitting Diode GENERAL DESCRIPTION — The Clairex CLED1 is a Gallium Arsenide infrared emitting diode in a lensed hermetic TO-46 package. It emits an intense band of radia­

Contextual Info: vC^VTCInc YJEc— » VM312H 14-CHANNEL, HIGH-PERFORMANCE, THIN-FILM HEAD, READ/WRITE PREAMPLIFIER _ July, 1993 FE A T U R E S TWO/THREE TERMINAL & SERVO PREAMPLIFIERS • • • • • • • • • High Performance:

MM13400E05

Abstract: 2N3904 TLP521 fin heat sink igbt
Contextual Info: LDIP- IPM IM13400-E Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● ● Home appliances applications. Inverter drive parts for AC/DC motor driving.

IM14400

Abstract: 600v 30a diode zener c2 6 MM14400008 2N3904 TLP521 ac drive circuit diagram diode zener ZD 103
Contextual Info: LDIP-IPM IM14400 Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● Home appliances applications. Inverter drive parts for AC/DC motor driving.

diode zd 33

Abstract: 40050
Contextual Info: Zubehör für Magnetventile Accessories Solenoid Valves Gerätesteckdosen Plug-In Sockets Technische Daten: Nennspannung AC/DC: 24 V Betriebsstrom: max. 4 A Leitungslänge: 3m Schutzbeschaltung: Z-Diode Gehäuse: schwer entflammbarer Kunststoff Schutzart:

diode zener ZD 260

Contextual Info: VBUS054B-HSF Vishay Semiconductors 4-Line BUS-port ESD-Protection FEATURES 6 5 4 • Ultra compact LLP75-6L package • Low package height < 0.6 mm • 4-line USB ESD-protection • Low leakage current 20397 1 2 3 • Low load capacitance CD = 0.8 pF 20453

G10597

Abstract: pa1500bh uPA1500 IEI-1213 MEI-1202 MF-1134 G-1059 PA1500B
Contextual Info: DATA SHEET COMPOUND FIELD EFFECT POWER TRANSISTOR µPA1500B N-CHANNEL POWER MOS FET ARRAY SWITCHING USE DESCRIPTION PACKAGE DIMENSIONS The µPA1500B is N-channel Power MOS FET Array that built in 4 circuits and surge absorber designed for solenoid, motor and lamp driver.

MM13400004

Abstract: IM13400 2N3904 TLP521
Contextual Info: LDIP- IPM IM13400 Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● ● Home appliances applications. Inverter drive parts for AC/DC motor driving.

IM15400

Abstract: 2N3904 TLP521 diode zener ZD 260 MM15400002
Contextual Info: LDIP- IPM IM15400 Description Cyntec IPM is integrated Drive, protection and system control functions that is designed for high performance 3-phase motor driver application like: ● ● Home appliances applications. Inverter drive parts for AC/DC motor driving.

Contextual Info: VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection e3 Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge

VBUS054B-HS3-GS08

Abstract: marking code U6
Contextual Info: VBUS054B-HS3 Vishay Semiconductors 4-Line BUS-port ESD-protection Features • • • • • Ultra compact LLP75-6A package 4-line USB ESD-protection Low leakage current Low load capacitance CD = 0.8 pF ESD-protection to IEC 61000-4-2 ± 15 kV contact discharge

TC74HC40103P

Abstract: hc745 HC-748 HC-746 4HC40103 HC-755 HC-753 TC74HC40102 diode zd 33 HC754
Contextual Info: TC74HC40102P TC74HC40103P TC74HC40102P DUAL BCD PROGRAMMABLE DOWN COUNTER TC74HC40103P 8-BIT BINARY PROGRAMMABLE DOWN COUNTER The TC74HC40102 and TC74HC40103 are high speed CMOS PROGRAMMABLE DOWN COUNTER fabricated with silicon gate C2MOS technology. They operate ten times as fast as that of metal-gate C2MOS IC 40102/40103B with