DIODES 30A Search Results

mini-melf with red band

Abstract: GENERAL SEMICONDUCTOR diodes marking code rb
Contextual Info: 1/2 MEDIUM POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,600V AND 1A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 1A • SURGE OVERLOAD RATING EITHER 10A OR 30A • RECTIFIER DIODES ARE PART OF GENERAL SEMICONDUCTOR’S UNIQUE ‘SUPERECTIFIER’ RANGE:

Contextual Info: 1/2 HIGH POWER SINGLE DIODES RECTIFIER & SCHOTTKY BARRIER DIODES • RECTIFIER DIODES AVAILABLE UP TO 1,000V AND 3A • SCHOTTKY BARRIER DIODES AVAILABLE UP TO 60V AND 3A • SURGE OVERLOAD RATING EITHER 30A, 50A OR 100A • RELIABLE LOW COST CONSTRUCTION WITH UL 94V-0 PLASTIC MATERIAL

block diagram of schottky diode

Abstract: EDZ TE61 27B H 48 zener diode 2a 200v schottky diode DC DC converter 5v to 400V 10W zener diode Bidirectional Zener Diode Glass 15v Schottky rectifier 3A EDZ te61 15B 200v 3A schottky
Contextual Info: -Diodes Schottky Barrier Diodes RSX Series Surface Mount / Thin-profile Power Package PMDT Package 2616 Size / Two-pin Mini-mold Schottky PMDU Package Sub-miniature Zener Diodes 2 terminals / composite Zener Diodes USB2.0 Compatible / High Reliability Zener Diodes

RHRG3040

Abstract: RHRG3050 RHRG3060 TA49063
Contextual Info: RHRG3040, RHRG3050, RHRG3060 April 1995 File Number 3938.2 30A, 400V - 600V Hyperfast Diodes Features RHRG3040, RHRG3050 and RHRG3060 TA49063 are hyperfast diodes with soft recovery characteristics (tRR < 40ns). They have half the recovery time of ultrafast diodes

thyristor k 202 russian

Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Contextual Info: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)

Contextual Info: RHRG3040, RHRG3050, RHRG3060 Semiconductor April 1995 File Number 3938.2 30A, 400V - 600V Hyperfast Diodes Features RHRG3040, RHRG3050 and RHRG3060 TA49063 are hyperfast diodes with soft recovery characteristics (tp p < 40ns). They have half the recovery time of ultrafast diodes

Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

RHRG3060C

Abstract: RHRG3040CC RHRG3060CC TA49063
Contextual Info: RHRG3040CC, RHRG3060CC Data Sheet January 2002 30A, 400V - 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride

Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

RHRG3060

Abstract: RHRG3040 TA49063
Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

RHRP3040

Abstract: RHRP3060 TA49063
Contextual Info: RHRP3040, RHRP3060 Data Sheet January 2002 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

MBRD660CTT4G

Contextual Info: DIO 4449 Why Diodes SBR2 final _- 09/10/2014 01:24 Page 1 WHY DIODES – SBR2 Proven Manufacturer of Discrete Components Why DIODES? Diodes and Rectifiers Customer Focused Diodes and Rectifiers in Power Solutions Switching Mode Power Supply Used as: Output Rectifier

Contextual Info: RHRG3040CC, RHRG3060CC Data Sheet January 2002 30A, 400V - 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride

ta49063

Abstract: RHRG*40 RHRG3040 RHRG3060
Contextual Info: RHRG3040, RHRG3060 Data Sheet January 2000 File Number 3938.3 30A, 400V - 600V Hyperfast Diodes Features The RHRG3040 and RHRG3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride

RHRG3060c

Abstract: 600v 30a RHRG3040CC RHRG3060CC TA49063
Contextual Info: RHRG3040CC, RHRG3060CC Data Sheet January 2000 File Number 3939.3 30A, 400V - 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride

SEM 5027A

Abstract: transistor BD 540 LYS MC710G 131-80 wj 89 MC707G 2n328 LN4005 diode reverse current and voltage mc708g C844P TS36A
Contextual Info: SELECTION GUIDES How To Use The Data Book Numerical Index Alphabetical Index Device Outlines GENERAL INFORMATION SILICON ZENER DIODES Regulator Diodes, Reference Diodes, Precision Reference Diodes and Reference Amplifiers SILICON RECTIFIERS SILICON RECTIFIER ASSEMBLIES

diode mur

Abstract: 600V 25A Ultrafast Diode MUR850 diode diode 400V 4A igbt 1000v 80a diode 400v 2A ultrafast igbt 200v 30a 600v 30a IGBT 30A, 600v DIODE igbt 200V 4A
Contextual Info: [ MCT/IGBT/DIODES 5 ULTRAFAST SINGLE DIODES PAGE SELECTION GUIDE. 5-3 ULTRAFAST SINGLE DIODE DATA SHEETS 2A, 50V - 200V Ultrafast Diodes.

TA49063

Abstract: RHRP3060
Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

SP4020

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SP4020 Series SP4020 Series 2.5pF, 30A Discrete TVS Diode RoHS Pb GREEN The SP4020 devices integrate low capacitance steering diodes with one or two zener diodes for unidirectional or bidirectional protection, respectively, to protect against

Contextual Info: RHRP3060 30A, 600V Hyperfast Diodes Features Description • Hyperfast with Soft Recovery . <40ns The RHRP3060 are hypersast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride passivated ion-implanted epitaxial planar construction.

Contextual Info: TVS Diode Arrays SPA Diodes Lightning Surge Protection- SP4020 Series SP4020 Series 2.5pF, 30A Discrete TVS Diode RoHS Pb GREEN The SP4020 devices integrate low capacitance steering diodes with one or two zener diodes for unidirectional or bidirectional protection, respectively, to protect against

RHRG3060C

Abstract: TA49063 RHRG3040CC RHRG3060CC
Contextual Info: in terrii RHRG3040CC, RHRG3060CC J a n u a ry . w in Data Sheet File Num ber 3939.3 30A, 400V 600V Hyperfast Dual Diodes Features The RHRG3040CC and RHRG3060CC are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are silicon nitride

Contextual Info: Index Type No. order Type No. Division Page AG01 Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01A Ultra-Fast-Recovery Rectifier Diodes (Axial) 43 AG01Y Ultra-Fast-Recovery Rectifier Diodes (Axial) AG01Z AK 03 Division Page Division Page EK 19 Schottky Barrier Diodes (Axial)

Hyperfast Diode 120A

Abstract: RHRP3040 RHRP3060 TA49063
Contextual Info: RHRP3040, RHRP3060 in t e r r ii Data Sheet J a n u a ry . w in File Number 3933.2 30A, 400V - 600V Hyperfast Diodes Features The RHRP3040 and RHRP3060 are hyperfast diodes with soft recovery characteristics trr < 40ns . They have half the recovery time of ultrafast diodes and are of silicon nitride