DIODES 415 Search Results

JAN1N23WG

Abstract: 1N21* Diode Detector Holder JAN1N21WE 1N23C 1N23C diode 1N53C JAN1N21WG MA490E MA492C 1N831A
Contextual Info: N/A-COMSEMICONDtBRLNGTON 11 J> • Sb4E2mGGÜ13SÔT■MIC J Point Contact Mixer and Detector Diodes Features ■ PACKAGED CARTRIDGE POINT CONTACT MIXER DIODES ■ COAXIAL POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED POINT CONTACT MIXER DIODES ■ AXIAL LEAD GLASS PACKAGED

1N4151 equivalent

Abstract: Diode Equivalent 1n4151 1N4532 1N4152 1N4151 1N4153 1N4154 1N4454 MHD618 in4454
Contextual Info: 1N4154 S E E PAG E 205 Silicon r -— i Diodes 1N4151.2.3 1N4454 1N4532,3,4 This fam ily of General Electric silicon signal diodes are very high speed sw itching diodes for computer circuits and general purpose applications. These diodes incorporate an oxide passivated planar struc­

transistor mark code H1

Abstract: transistor mark code H7 Variable Capacitance Diode HVR100 mark CA MARK CODE N1 rf transistor mark code H1 HVB14S HVC131 HVC132
Contextual Info: RF-Diodes PIN-Diodes Variable Capacitance Diodes HVB14S HVC200A HVC202A HVC202B HVC300A HVC306A HVC308A HVC317B HVC350B HVC351 HVC355B HVC357 HVC358B HVC359 HVC362 HVC363A HVC365 HVC369B HVC372B HVC374B HVC131 HVC132 HVC133 HVC134 HVM121WK HVM131S HVM131SR

r1c diode

Abstract: Zener Diodes with small tolerances manufacturer R2C Zener r1p 11 TRANSISTOR h a 431 transistor precision shunt regulator 431 431 regulator AN58 AN59 E192
Contextual Info: A Product Line of Diodes Incorporated AN58 Designing with References - Shunt regulation Peter Abiodun A. Bode, Snr. Applications Engineer, Diodes Incorporated Introduction This application note introduces shunt regulators, sometimes called "reference diodes", "3terminal voltage references", or "adjustable voltage references". Using worked examples we

20301

Abstract: CVB1045-12 MV1204 V1204-24 VE7800-30 smv1200-04 CVH2030 CKV2010 SMV1204-11
Contextual Info: Section 4 Varactor Diodes Table of Contents Plastic Packaged Surface Mount Varactor Diodes . 4-3 Silicon Abrupt Varactor D io d e s.

1N3005A

Contextual Info: MOTOROLA SC -CDIODES/OPTO} 15E D | L3L7ESS □ □7ciaE3 1 | - T-JH7 1N2970A MOTOROLA im m • SEMICONDUCTOR l TECHNICAL DATA thru ■ 1N3015A 10 WATTS ZENER DIODES ZENER DIODES Diffused-junctlon zener diodes for both military and highreliability Industrial applications. Available with anode-to-case

in4152

Abstract: IR D4-D4
Contextual Info: This Computer Diodes continued Surface Mount Diodes LEADLESS G LA SS PACKAGE BV (V) Min FDLL4151 LL-34 75 FDLL 4152 LL-34 40 Its Manufacturer C PF Max trr ns Max Test Cond. Proc. Family 50 4.0 2.0 (Note 2) D4 30 0.8B 20 SeelN4152 4.0 2.0 (Note 2) D4 50 0.88

MSPD2018

Abstract: MZBD-9161 ZENER 15B1 msd700 package inductance MSPD2018-H50 B20 zener diode glass MPN7320 MZBD9161 MLP7121 15B1 zener diode
Contextual Info: Aeroflex / Metelics, Inc. Microwave Diodes & Passive Semiconductor Devices Microwave Diodes & Passive Semiconductor Devices Aeroflex / Metelics, Inc. Aeroflex / Metelics, Inc. East Coast Operations 54 Grenier Field Road, Londonderry, NH 03053 Tel: 603 641-3800

BZX99-C4V7

Abstract: BZX99-C5V1 BZX99-C3V0 C6V2 ST BZX99-C7V5 BZX99-C13 BZX99-C2V7 BZX99-C11 BZX99-C9V1 BZX99-C3V6
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BZX99 series Voltage regulator diodes Product specification Supersedes data of 1999 May 31 1999 Oct 20 Philips Semiconductors Product specification Voltage regulator diodes BZX99 series FEATURES PINNING

KV1226

Abstract: KV1371NT KV1235Z KV1320 1235Z KV1290A-3 1236Z kv1236 V1420 KV1236Z
Contextual Info: TOKO AMERICA INC •5 v m m ?b3g poonsq 13a DIODES • t a i ' ^ Q ' I ^ 1^ TO K O K Variable Capacitance Diodes Application For AM,* FM, UHF AM F M U H F l i g â T f t l ^ - f ^ - K f f l i ÉSU- K • KV1235Z KV1236Z • KV1260 • KV1260-2 KV1280 Diodes

L9836

Abstract: L9839 L9827 L9B47 L9813 L98200 L9B15 L9H5.4 L9B10 L9 Zener
Contextual Info: L9 Series 1.5 KW Voltage Limiting Diodes A range of medium power zener and avalanche surge suppressor diodes available in a hermetically sealed D01 package in both unipolar and bipolar configurations. - 5KW; 1mS ^ surge- - - —

smd diode code B4 SOD323

Abstract: BZX399C2V4 BZX399C6V8 smd diode marking mcc BM smd diode marking BM BZX399C39 BZX399C30 BZX399C1V8 smd transistor bq BZX399C2V2
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX399 series Voltage regulator diodes Product specification 1999 Jun 04 Philips Semiconductors Product specification Voltage regulator diodes BZX399 series FEATURES PINNING • Total power dissipation: max. 300 mW

marking of m7 diodes

Abstract: m7 smd diodes diode SMD MARKING CODE K6 03 M6 PHILIPS SMD CODE smd marking m4 BZX384 diode SMD MARKING CODE K6 diode smd marking M7 DIODE BZX 24 M7 marking codes
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D049 BZX384 series Voltage regulator diodes Product specification 2003 Apr 01 Philips Semiconductors Product specification Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

0119 Solar Lamp Controller

Abstract: transistor SMD W06 78 NXP Semiconductors 70150 TYN225 WH1602A Matsua microswitch 250V AC IRF9520 Samsung iskra BT 200 MOTOR FM 270R 74HC00M
Contextual Info: 24 Electronic Components pp751-856:Layout 1 24/1/14 16:12 Page 751 Electronic Components CAPACITORS OPTOELECTRONICS Ceramic Capacitors Tantalum Capacitors Variable Capacitors 752 759 759 DISCRETE SEMICONDUCTORS Bridge Rectifier Diodes Diodes Transistors 766

Contextual Info: NSR15SDW1T1 NSR15SDW1T2 Dual RF Schottky Diode These diodes are designed for analog and digital applications, including DC based signal detection and mixing applications. Features: • • • • http://onsemi.com RF SCHOTTKY BARRIER DIODES 15 VOLTS, 30 mA

m7 smd diodes NXP

Abstract: m7 smd diodes diode SMD MARKING CODE K6 06 Diode smd marking N4 BZX384 nxp marking code M2 smd diode marking T7 diode NXP marking code N1 diode SMD MARKING CODE K6 BZX384-B3V3
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET BZX384 series Voltage regulator diodes Product data sheet Supersedes data of 2003 Apr 01 2004 Mar 22 NXP Semiconductors Product data sheet Voltage regulator diodes BZX384 series FEATURES PINNING • Total power dissipation: max. 300 mW

Philips diode

Abstract: APD Semiconductor APD, applications, bias supply IR 2E09 F17 DIODE pin configuration NPN transistor 2N3904 2N3904 AN10 DIODE F22 rohm diode
Contextual Info: AN 16.4 Using Anti-Parallel Diodes APD with SMSC Temperature Sensing Devices 1 Introduction This application note provides information on maintaining temperature measurement accuracy and noise immunity when using anti-parallel diodes (APD) with SMSC’s APD temperature sensing devices.

IN3029B

Abstract: IN3036 4170B zener diodes 1N serie 1N4164 IN3037B 1N4171 IN3016B IN3048B IN3029
Contextual Info: DIODES DE RÉGULATION DE TENSION , zener diodes Ps TYPES 1w / 1N 4158 B 1 N 4159 B 1N 4160 B 1N 4161 B 1N 4162 B 1 N 4163 B 1N 4164 B 1N 4165B 1N 4166 B 1N 4167B 1N 4168 B 1N 4169 B 1N4170B 1N4171 B 1N 4172 B 1N 4173B 1N 4174 B 1N 4175B 1N4176B 1N 4177B 1N 4178B

L7B15

Abstract: L7B150 L7B10 L7B11 L7B12 L7B13 L7B16 L7B18 L7B20 L7B22
Contextual Info: L7 Series 1.5 KW Voltage Limiting Diodes A range of high power zener and avalanche surge suppressor diodes available to BS 9305-F-080 in a hermetically sealed D 04 glass package in both unipolar and bipolar configurations. ; 1mS expo

smd marking JD

Abstract: BAW74 JD smd diodes
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES BAW74 SOT-23 Formed SMD Package 3 Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking BAW74 - JD High-Speed Switching Dual Diodes, Common Anode

BAW74

Abstract: smd marking JD
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SILICON PLANAR DUAL SWITCHING DIODES BAW74 SOT-23 Formed SMD Package 3 Pin Configuration 1 = CATHODE 2 = CATHODE 3 = ANODE 2 1 Marking BAW74 - JD High-Speed Switching Dual Diodes, Common Anode

bvr3

Abstract: BYR30-500 BYR30-600 BYR30-600U
Contextual Info: SbE 711DÛEL D DOmSSD 7T7 MPHIN BYR30 SERIES ULTRA FAST-RECOVERY RECTIFIER DIODES *7 Glass-passivated, high-efftciency epitaxial rectifie r diodes in DO-4 metal envelopes, featuring low forw ard voltage drop, ultra fast reverse recovery times, very low stored charge and soft-recovery

Contextual Info: bb53T31 Q02ST15 037 H A P X N AMER PHILIPS/DISCRETE PMLL4150 PMLL4151 PMLL4153 b?E » 7 V ULTRA-HIGH-SPEED SILICON DIODES FOR SURFACE MOUNTING Whiskerless diodes in SOD80C envelopes. The PMLL4150 is primarily intended fo r general purpose use in computer and industrial applications.

BYV32F

Abstract: BYV32F-50
Contextual Info: BYV32F SERIES T -03-1 7 PHILIPS INTERN A T I O N A L SbE J> 711002b J V_ 00413bfl âlfl • PHIN ULTRA FAST-RECOVERY ELECTRICALLY-ISOLATED DOUBLE RECTIFIER DIODES Glass-passivated, high-efficiency epitaxial double rectifier diodes in SOT-186 full-pack plastic