uhf8jt
Abstract: JESD22-B102D J-STD-002B
Text: UH8JT & UHF8JT Vishay General Semiconductor High Voltage Ultrafast Rectifier TO-220AC ITO-220AC 2 2 1 1 UH8JT UHF8JT PIN 1 TYPICAL APPLICATIONS For use in high voltage continuous mode power factor correctors CCM PFC , switching mode power supplies, freewheeling diodes and secondary dc-to-dc
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O-220AC
ITO-220AC
2002/95/EC
2002/96/EC
08-Apr-05
uhf8jt
JESD22-B102D
J-STD-002B
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DS17
Abstract: DSA0068090 HLCS-KA88 HLCS-KA99 HLCS-KB88 HLCS-KB99 HLCS-KG88 HLCS-KG99 HLCS-KP88 HLCS-KP99
Text: HLCS-KRxx HLCS-KAxx HLCS-KPxx HLCS-KGxx HLCS-KBxx Data Sheet ChipStrip Lighting – v3.0 Features Description • • • • The ChipStrip Contour Lighting Product is comprised of a linear array of solid state light emitting diodes LEDs mounted on an elongated printed circuit board. This board is encased inside a
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COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-1102 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-1102
I8262
COLOR tv tube charger circuit diagrams
MBRF 1015 CT
smd diode S4 67A
DO-213AB smd diode color marking code
vacuum tube applications data book
V40100PG
diode 719 b340a
EQUIVALENT 31gf6
SB050 D 168
s104 diode 87a
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Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
Text: VISHAY INTERTECHNOLOGY , INC . INTERACTIVE data book rectifiers vishay general semiconductor vse-db0001-0809 Notes: 1. To navigate: a Click on the Vishay logo on any datasheet to go to the Contents page for that section. Click on the Vishay logo on any Contents
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vse-db0001-0809
Schottky Diode 039 B34
S4 84a DIODE schottky
MELF ZENER DIODE color bands blue
diode RGP 15J
sb050 d 331
s104 diode 87a
252 B34 SMD ZENER DIODE
SB050 transistor equivalent
MELF DIODE color bands
smd transistor P2D
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JESD22-B102D
Abstract: J-STD-002B M2035S M2045S
Text: M2035S & M2045S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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M2035S
M2045S
O-220AB
2002/95/EC
2002/96/EC
08-Apr-05
JESD22-B102D
J-STD-002B
M2035S
M2045S
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Untitled
Abstract: No abstract text available
Text: M2035S & M2045S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TO-220AB Major Ratings and Characteristics IF AV 20 A VRRM 35 V, 45 V IFSM 200 A VF at IF = 20 A 0.55 V TJ max. 150 °C 3 2 1 1 2 3 CASE Features Mechanical Data
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M2035S
M2045S
O-220AB
2002/95/EC
2002/96/EC
O-220AB
J-STD-002B
JESD22-B102D
08-Apr-05
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M2035S
Abstract: JESD22-B102D J-STD-002B M2045S
Text: M2035S & M2045S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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M2035S
M2045S
O-220AB
2002/95/EC
2002/96/EC
08-Apr-05
M2035S
JESD22-B102D
J-STD-002B
M2045S
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M3045S
Abstract: No abstract text available
Text: M3035S & M3045S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 seconds
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M3035S
M3045S
2002/95/EC
2002/96/EC
O-220AB
O-220AB
08-Apr-05
M3045S
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bys12
Abstract: BYS12-90 JESD22-B102D J-STD-002B BYS12-90HE3
Text: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability
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BYS12-90
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
bys12
BYS12-90
JESD22-B102D
J-STD-002B
BYS12-90HE3
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Untitled
Abstract: No abstract text available
Text: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability
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BYS12-90
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
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Untitled
Abstract: No abstract text available
Text: M2035S & M2045S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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M2035S
M2045S
O-220AB
2002/95/EC
2002/96/EC
O-220AB
08-Apr-05
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FE050B9
Abstract: FE150b FE050B FE100B FE150B9 UL-1950 ta 8719
Text: Data Sheet June 1998 FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features The FE050B, FE100B, and FE150B Power Modules use advanced, surface-mount technology and deliver high-quality, compact, dc-dc conversion at an economical price.
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FE050B,
FE100B,
FE150B
protection99,
DS97-532EPS
DS92-060EPS)
FE050B9
FE050B
FE100B
FE150B9
UL-1950
ta 8719
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Untitled
Abstract: No abstract text available
Text: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability
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BYS12-90
DO-214AC
J-STD-020,
2002/95/EC
2002/96/EC
08-Apr-05
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M2035S
Abstract: M2045S JESD22-B102 J-STD-002
Text: M2035S & M2045S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability
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M2035S
M2045S
O-220AB
2002/95/EC
2002/96/EC
18-Jul-08
M2035S
M2045S
JESD22-B102
J-STD-002
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Untitled
Abstract: No abstract text available
Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time
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BYG20D
BYG20J
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
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BYD20G
Abstract: byd20
Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time
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BYG20D
BYG20J
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
BYD20G
byd20
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Untitled
Abstract: No abstract text available
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
J-STD-020C
2002/95/EC
2002/96/EC
DO-214AC
J-STD-002B
JESD22-B102D
08-Apr-05
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vishay MARKING UM SMA
Abstract: smd code marking e3 BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
Text: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability
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BYG10D
BYG10Y
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
vishay MARKING UM SMA
smd code marking e3
BYG10D-BYG10M
BYG10Y
JESD22-B102D
J-STD-002B
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BYG20J
Abstract: BYD20G vishay smd diode code marking BYG20D BYD20 marking code E3 SMD diode smd code marking e3 JESD22-B102D J-STD-002B
Text: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time
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BYG20D
BYG20J
DO-214AC
J-STD-020C,
2002/95/EC
2002/96/EC
08-Apr-05
BYG20J
BYD20G
vishay smd diode code marking
BYD20
marking code E3 SMD diode
smd code marking e3
JESD22-B102D
J-STD-002B
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M3045
Abstract: JESD22-B102D J-STD-002B M3045S
Text: New Product M3035S, M3045S, MI3035S & MI3045S Vishay General Semiconductor Schottky Barrier Rectifier TO-220AB TO-262AA K 2 3 1 1 M30xxS 2 3 FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop
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M3035S,
M3045S,
MI3035S
MI3045S
O-220AB
O-262AA
M30xxS
2002/95/EC
2002/96/EC
MI30xxS
M3045
JESD22-B102D
J-STD-002B
M3045S
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diodes 8895
Abstract: 1n4771
Text: Micmsemi Zener Regulator Diodes Part N um ber ' M icrosem i ! D ivision Package O utline Type Mil Spec Data Pow er Sheet ID W Vz (V) Izt (mA) (£2) Zzt Zzk (Q ) IR (UA) VR (V) Toi. (+/-%) 1 N4780 Scottsdale DO-7 STD 2962 0.25 8.5 1 100 5 1 N4780A Scottsdale
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DO-35
O-213AA
diodes 8895
1n4771
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FE150B lucent DC-DC POWER MODULE
Abstract: No abstract text available
Text: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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OCR Scan
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PDF
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FE050B,
FE100B,
FE150B
FE050B9
FE100B9
FE150B9
FE050B
FE150B lucent DC-DC POWER MODULE
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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OCR Scan
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PDF
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FE050B,
FE100B,
FE150B
DS97-532EPS
DS92-060EPS)
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Untitled
Abstract: No abstract text available
Text: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in.
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OCR Scan
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PDF
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FE050B,
FE100B,
FE150B
FE050B9
FE100B9
FE150B9
FE050B
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