DIODES 8895 Search Results
DIODES 8895 Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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CEZ6V2 |
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Zener Diode, 6.2 V, ESC |
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CUZ6V8 |
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Zener Diode, 6.8 V, USC |
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CEZ5V6 |
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Zener Diode, 5.6 V, ESC |
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CUZ6V2 |
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Zener Diode, 6.2 V, USC |
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CUZ30V |
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Zener Diode, 30 V, USC |
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DIODES 8895 Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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uhf8jt
Abstract: JESD22-B102D J-STD-002B
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O-220AC ITO-220AC 2002/95/EC 2002/96/EC 08-Apr-05 uhf8jt JESD22-B102D J-STD-002B | |
DS17
Abstract: DSA0068090 HLCS-KA88 HLCS-KA99 HLCS-KB88 HLCS-KB99 HLCS-KG88 HLCS-KG99 HLCS-KP88 HLCS-KP99
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diodes 8895
Abstract: 1n4771
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OCR Scan |
DO-35 O-213AA diodes 8895 1n4771 | |
COLOR tv tube charger circuit diagrams
Abstract: MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a
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vse-db0001-1102 I8262 COLOR tv tube charger circuit diagrams MBRF 1015 CT smd diode S4 67A DO-213AB smd diode color marking code vacuum tube applications data book V40100PG diode 719 b340a EQUIVALENT 31gf6 SB050 D 168 s104 diode 87a | |
Schottky Diode 039 B34
Abstract: S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D
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vse-db0001-0809 Schottky Diode 039 B34 S4 84a DIODE schottky MELF ZENER DIODE color bands blue diode RGP 15J sb050 d 331 s104 diode 87a 252 B34 SMD ZENER DIODE SB050 transistor equivalent MELF DIODE color bands smd transistor P2D | |
FE150B lucent DC-DC POWER MODULEContextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in. |
OCR Scan |
FE050B, FE100B, FE150B FE050B9 FE100B9 FE150B9 FE050B FE150B lucent DC-DC POWER MODULE | |
JESD22-B102D
Abstract: J-STD-002B M2035S M2045S
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M2035S M2045S O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 JESD22-B102D J-STD-002B M2035S M2045S | |
Contextual Info: M2035S & M2045S New Product Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier TO-220AB Major Ratings and Characteristics IF AV 20 A VRRM 35 V, 45 V IFSM 200 A VF at IF = 20 A 0.55 V TJ max. 150 °C 3 2 1 1 2 3 CASE Features Mechanical Data |
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M2035S M2045S O-220AB 2002/95/EC 2002/96/EC O-220AB J-STD-002B JESD22-B102D 08-Apr-05 | |
M2035S
Abstract: JESD22-B102D J-STD-002B M2045S
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M2035S M2045S O-220AB 2002/95/EC 2002/96/EC 08-Apr-05 M2035S JESD22-B102D J-STD-002B M2045S | |
M3045SContextual Info: M3035S & M3045S Vishay General Semiconductor Schottky Barrier Rectifier FEATURES • Guardring for overvoltage protection • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation • Solder Dip 260 °C, 40 seconds |
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M3035S M3045S 2002/95/EC 2002/96/EC O-220AB O-220AB 08-Apr-05 M3045S | |
bys12
Abstract: BYS12-90 JESD22-B102D J-STD-002B BYS12-90HE3
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BYS12-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 bys12 BYS12-90 JESD22-B102D J-STD-002B BYS12-90HE3 | |
Contextual Info: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability |
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BYS12-90 DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 | |
Contextual Info: M2035S & M2045S Vishay General Semiconductor High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES • Guardring for overvoltage protection TO-220AB • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability |
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M2035S M2045S O-220AB 2002/95/EC 2002/96/EC O-220AB 08-Apr-05 | |
FE050B9
Abstract: FE150b FE050B FE100B FE150B9 UL-1950 ta 8719
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FE050B, FE100B, FE150B protection99, DS97-532EPS DS92-060EPS) FE050B9 FE050B FE100B FE150B9 UL-1950 ta 8719 | |
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Contextual Info: Data Sheet June 1998 Lucent Technologies Bell Labs Innovations FE050B, FE100B, FE150B Power Modules: dc-dc Converters; 38 Vdc to 60 Vdc Input, 12 Vdc Output; 50 W to 150 W Features • High efficiency: 86% typical ■ Parallel operation with load sharing ■ Low profile: 12.7 mm 0.5 in. |
OCR Scan |
FE050B, FE100B, FE150B FE050B9 FE100B9 FE150B9 FE050B | |
Contextual Info: BYS12-90 Vishay General Semiconductor Surface Mount Schottky Barrier Rectifier FEATURES • Low profile package • Ideal for automated placement • Guardring for overvoltage protection • Low power losses, high efficiency • Very low switching losses • High surge capability |
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BYS12-90 DO-214AC J-STD-020, 2002/95/EC 2002/96/EC 08-Apr-05 | |
M2035S
Abstract: M2045S JESD22-B102 J-STD-002
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M2035S M2045S O-220AB 2002/95/EC 2002/96/EC 18-Jul-08 M2035S M2045S JESD22-B102 J-STD-002 | |
JESD22-B102D
Abstract: J-STD-002B
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2002/95/EC 2002/96/EC O-220AC 08-Apr-05 JESD22-B102D J-STD-002B | |
Contextual Info: BYG20D thru BYG20J Vishay General Semiconductor Ultrafast Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Glass passivated junction • Low reverse current • Soft recovery characteristics • Ultrafast reverse recovery time |
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BYG20D BYG20J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 | |
BYD20G
Abstract: byd20
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BYG20D BYG20J J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 BYD20G byd20 | |
Contextual Info: BYG10D thru BYG10Y Vishay General Semiconductor Standard Avalanche SMD Rectifier FEATURES • Low profile package • Ideal for automated placement • Controlled avalanche characteristics • Glass passivated junction • Low reverse current • High surge current capability |
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BYG10D BYG10Y J-STD-020C 2002/95/EC 2002/96/EC DO-214AC J-STD-002B JESD22-B102D 08-Apr-05 | |
vishay MARKING UM SMA
Abstract: smd code marking e3 BYG10D BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B
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BYG10D BYG10Y DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 vishay MARKING UM SMA smd code marking e3 BYG10D-BYG10M BYG10Y JESD22-B102D J-STD-002B | |
BYG20J
Abstract: BYD20G vishay smd diode code marking BYG20D BYD20 marking code E3 SMD diode smd code marking e3 JESD22-B102D J-STD-002B
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BYG20D BYG20J DO-214AC J-STD-020C, 2002/95/EC 2002/96/EC 08-Apr-05 BYG20J BYD20G vishay smd diode code marking BYD20 marking code E3 SMD diode smd code marking e3 JESD22-B102D J-STD-002B | |
M3045
Abstract: JESD22-B102D J-STD-002B M3045S
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M3035S, M3045S, MI3035S MI3045S O-220AB O-262AA M30xxS 2002/95/EC 2002/96/EC MI30xxS M3045 JESD22-B102D J-STD-002B M3045S |