DIODES SHOTTKY Search Results

hitachi mosfet power amplifier audio application

Abstract: transistor 2sk MESFET Application N Channel Dual Gate MOS FET UHF/VHF TV Tuner hitachi mosfet audio application note uhf tv booster circuit diagram hvm15 varicap UHF/VHF booster circuit diagram booster gsm antenna UHF/VHF TV Tuner HITACHI
Contextual Info: C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications HITACHI DISCRETE DEVICES FOR WIRELESS & TUNER APPLICATIONS C 1998 Dirk Plha HITACHI Hitachi Diodes for Wireless and Tuner Applications PRODUCT LINE-UP BY APPLICATION: • UHV / VHF Tuners

shottky sot-23

Abstract: shottky sot23
Contextual Info: BAS70 thru BAS70-06 Schottky Diodes Features SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. .122 3.1 .110 (2.8)

Contextual Info: BAS40 thru BAS40-06 Schottky Diodes Features SOT-23 • These diodes feature very low turn-on voltage and fast switching. • These devices are protected by a PN junction guard ring against excessive voltage, such as electrostatic discharges. .122 3.1 .110 (2.8)

Contextual Info: 9 Small Signal Leaded Devices Philips Components offers one of the broadest selections of Small Signal discrete semiconductors in the w orld, ranging from general purpose diodes and transistors to state-of-the-art FETs and RF devices. Diodes include specialized tuning types for

power shottky diodes

Abstract: shottky 1a
Contextual Info: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU

RSX101M-30

Contextual Info: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU

Contextual Info: RSX101M-30 Diodes Shottky barrier diode RSX101M-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 0.1±0.1 0.05 1.6±0.2 ROHM : PMDU

Contextual Info: RB500V-40 Diodes Shottky barrier diode RB500V-40 Application Low current rectification External dimensions Unit : mm Lead size figure (Unit : mm) Features 1) Ultra Small mold type. (UMD2) 2) Low IR 3) High reliability. Construction Silicon epitaxial planar

RSX101VA-30

Contextual Info: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.

Contextual Info: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1

RSX201L-30

Contextual Info: RSX201L-30 Diodes Shottky barrier diode RSX201L-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode. Rectifier for power supply units. Battery protection against reversal current CATHODE MARK 1 2 2.6±0.2 0.1±0.02 0.1 5.0±0.3

Contextual Info: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1

RSX071VA-30

Contextual Info: RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 Q zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.

RSX051VA-30

Contextual Info: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 P zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.

RSX301L-30

Contextual Info: RSX301L-30 Diodes Shottky barrier diode RSX301L-30 !External dimensions Unit : mm !Application High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 5 6 !Features 1) Small mold type. (PMDS (4526) )

Contextual Info: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1

RSX101VA-30

Contextual Info: RSX101VA-30 Diodes Shottky barrier diode RSX101VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.4±0.1 R zFeatures 1) Small power mold type. (TUMD2 (1913) ) 2) High reliability.

RSX301L-30

Contextual Info: RSX301L-30 Diodes Shottky barrier diode RSX301L-30 !External dimensions Unit : mm !Application High efficient shottky barrier diode Rectifier for power supply units Battery protection against reversal current CATHODE MARK 5 6 !Features 1) Small mold type. (PMDS (4526) )

RB480Y

Abstract: power shottky diodes
Contextual Info: RB480Y Diodes Shottky barrier diode Silicon Epitaxial Planer RB480Y zExternal dimensions (Unit : mm) zApplications Rectifying small power (2) (1) 0.5+ −0.05 1.2+ − 0.1 1.6+ − 0.1 zFeatures 1) Ultra small mold type (EMD4) 2) High reliability 0.2 0.1

RSX201L-30

Contextual Info: RSX201L-30 Diodes Shottky barrier diode RSX201L-30 zExternal dimensions Unit : mm zApplication High efficient shottky barrier diode. Rectifier for power supply units. Battery protection against reversal current CATHODE MARK 1 2 2.6±0.2 0.1±0.02 0.1 5.0±0.3

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)

RSX071VA-30

Contextual Info: RSX071VA-30 Diodes Shottky barrier diode RSX071VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 Q zFeatures 1) Small power mold type. (TUMD2 (1913) )

RSX051VA-30

Contextual Info: RSX051VA-30 Diodes Shottky barrier diode RSX051VA-30 zExternal dimensions Unit : mm ROHM : EIAJ : − JEDEC : zStructure Silicon Epitaxial Planer 1.45±0.1 0.17±0.1 0.05 0.6±0.2 0.1 1.3±0.1 0.4±0.1 P zFeatures 1) Small power mold type. (TUMD2 (1913) )

1SS402

Contextual Info: 1SS402 TOSHIBA Diode Silicon Epitaxial Shottky Barrier Type 1SS402 Unit in mm High Speed Switching Applications Two independent diodes are mounted on four-pin ultra-small packages that are suitable for higher mounting densities. Low forward voltage : VF 3 = 0.50V (typ.)