DIODES SIEMENS Search Results

thyristor k 202 russian

Abstract: russian diode kp20a 600v kp20a ZP20A optothyristor KP300A KP200A T143-630 SCR zp5a
Contextual Info: CONTENT RECTIFIER DIODES THREADED STUD DESIGN RUSSIAN PURPOSE 2 PRESS PACK RECTIFIER DIODES (RUSSIAN PURPOSE) 2 AVALANCHE RECTIFIER DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE) 3 AVALANCHE RECTIFIER DIODES PRESS PACK (RUSSIAN PURPOSE) 3 FAST RECOVERY DIODES THREADED STUD DESIGN (RUSSIAN PURPOSE)

Contextual Info: SIEMENS A KTI ENGESELLS CHA F bGE D • ÛB3SbGS ÜÜ4S43Ü T73 « S I E G Microwave, RF & Tuner Diodes For com plete package outlines, refer to pages PO-1 through PO-6 RF Diodes Schottky Diodes For Professional Applications Medium Barrier Type Frequency Band

BXY 36 300

Abstract: cfy66 GHZ micro-X Package BFY19 CFY67-08 107 micro-x BFY183 BFY420 Microwave Semiconductors BFY193 Microx
Contextual Info: SIEMENS 4 HiRel Discrete and Microwave Semiconductors Selection Guides for HiRel Discrete Semiconductors The Selection Guide provides main maximum ratings and electrical key parameters typical data . 4.1 HiRel Silicon Diodes Low Barrier Silicon Schottky Diodes

gallium phosphide band structure

Abstract: silicon carbide LED Zinc sulfide Sic led light emitting diode siemens monocrystalline efficiency Siemens LED visible light 35p0 siemens sic leds design
Contextual Info: Blue Light Emitting SiliconCarbide Diodes—Materials, Technology, Characteristics Appnote 31 by Dr. Claus Wyrich Siemens Research Laboratories Munich, Germany Introduction Light-emitting diodes LEDs are widely used in the field of electronics as indicator lamps and seven-segment displays

808nm 1W laser diode

Abstract: 980nm led laser diode 905nm led 940nm high power 1W laser diodes 808nm 1w 905nm Plastic Pulsed Laser Diode 780nm laser diode module SPL/780nm laser diode module CG94 TO220 Semiconductor Packaging
Contextual Info: High Power Laser Diodes Power your application with a Siemens Laser Diode! All high power laser diodes manufactured at Siemens are based on InGa Al as double quantum well second confinement heterostructures (DQW-SCH), which are grown by metalorganic chemical

Q62702-D979

Abstract: 44S marking code Q62702-D980 44S DIODE Q62702-D1314 44s SOT23-3 DIODE 4004 BAS 20 SOT23 46s sot23 marking 47s
Contextual Info: SIEMENS Silicon Schottky Diodes • • • • 6 BAS 40 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!

BZX85C12V

Abstract: TOSHIBA 2N3055 bta41-600b application BTA41-600B firing circuit TAB 429 H toshiba BZX85C20V SCR tyn612 pin configuration picaxe TYN612 specification 2SA1085E
Contextual Info: SEMICONDUCTORS DISCRETE DEVICES Cathode Anode DO-15 DO-201AD 6.8 x 3.5mm 9.5 x 5.3mm Anode Cathode TO-220AC Fast recovery diodes page 427 Schottky power diodes page 428 Isolated tab triacs page 430 Anode 1 Gate Anode 2 Bridge rectifiers Current regulating diodes

aaf marking sot23-5

Contextual Info: BAS 40 Silicon Schottky Diodes 32E D • aa3b32Q QQlbSlG 2 ISIP SIEMENS/ SPCLi SEMICONDS • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing £ - available with C ECC quality assessment

Contextual Info: SIEMENS Silicon Schottky Diodes BAS 40. • General-purpose diodes for high-speed switching • Circuit protection • Voltage clamping • High-level detecting and mixing € Available with C E C C quality assessm ent ESD : Electrostatic discharge sensitive device, observe handling precautions!

BAR14-1

Contextual Info: SIEMENS AKTIEN6ESELLSCHAF bOE H • J23Sb05 0051MaM M83 « S I E G SIEMENS -T -07-16 Dioden Diodes PIN-Dioden allgemeine und Schaltanwendungen PIN (General Purpose, Switching) Diodes Characteristics (TA= 25° C) Maximum Ratings Type 1, V Ct pF mA V BA 585

Contextual Info: SIEMENS Silicon Schottky Diodes • • • • £ BAS 7 0 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing Available with C E C C quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!

Q62703-Q1566

Abstract: TA 7503 Q62703-Q1568 Q62703-Q1570 Q62703-Q1579 Q62703-Q1598 Q62703-Q1599
Contextual Info: QBE D • Û235b05 OQlblbH 3 « S I E G LG S259 .LSS259 Light Emitting Diodes SIEMENS AKTIENGESELLSCHAF " T - V / - / ? LED low-current single diodes • Backlighting of LCDs • Indicator for switching and operation modes • Direct drive is possible via CMOS gate and

eye response curve

Abstract: S250-DO S250 smd lg diode diode s250 diode LR smd Q62703-Q1539 TA 7503 Q62703-Q1516 Q62703-Q1517
Contextual Info: L Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-J f SIEMENS AKTIEN6ESELLSCHAF LED s-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

smd lg diode

Abstract: Q62703Q1640 Q62703-Q1608 diodes siemens Q62703-Q1657 smd code LR S25000 diode s250 S250-D0 S250
Contextual Info: L I Q3E D • ISIEG ô235büS 001feilST_T LR S250 LU S250 Light Emitting Diodes T '-'V I-Jf SIEMENS AKTIEN6ESELLSCHAF LEDs-single and double diodes • • • • • • Backlighting of LCDs Proximity switches Touch keyboards Failure Indications on SMD PC boards

BB409

Abstract: BA389 d bb833 PACKAGE OUTLINES sod bb609
Contextual Info: SIEMENS AKTIEN6ESELLSCHAF bOE D fl23SbDS D G 4 S 4 n 3G5 « S I E Ê Microwave, RF & Tuner Diodes T 07-01 - For complete package outlines, refer to pages PO-1 through PO-6 PIN General Purpose, Switching Diodes Characteristics (TA=25°C) Maximum Ratings IType

SIEMENS BB409

Abstract: bb409
Contextual Info: SIEMENS AKTIENGESELLSCHAF bOE » • fi23SbOS 0051403 547 « S I E G SIEMENS 7 Dioden Diodes Varaktor- Tuner- Dioden Varactor (Tuning) Diodes Type Characteristics ( 7 a = 25°C) Cj at Vpj V pF Cj pF at VR V ^Ratio ca Maximum Ratings Wt h V mA Package Lead SMD/

BA389 PIN Diode

Abstract: ba389 BA284 V/BA389 PIN Diode BA389 diode
Contextual Info: ~ ä fl 8236320 SIEMENS/ Diodes ] > F |f l2 3 b 3 a o 001 4552 i S P C L , SEMÎCÔNÔS ~ 880 14252 D T ~ 0 1 - S Silicon RF switching diodes Glass package DO 35 Type Characteristics f A = 25°C) VR Applications Figure VHF tuners 10 Applications Figure

Contextual Info: S IP T - o ï - Q ^ 35E D • â 2 3 b 3 5 0 QOlbSlB fl BAS 70. Silicon Schottky Diodes SIEMENS/ SPCL-. SEMICONDS • • • • General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing C - available with CECC quality assessment

Bat 16-046

Contextual Info: SIEMENS AKTIENGESELLSCHAF bGE ]> 7 ^0 3 - / 3 SIEMENS Dioden Diodes Schottky Dioden Schottky Diodes /R at PF fiA Dual 25 100 < 1 .1 0 < 1.00 20 <400 BAS 125-06 (Dual) 25 100 < 1 .1 0 < 1.00 20 <4 0 0 BAS 125-07 (Dual) 25 100 < 1 .1 0 < 1 .0 0 ' 20 4 90 <0.35

leistungs dioden siemens

Abstract: siemens dioden siemens diodes leistungstransistoren
Contextual Info: SIEMENS Leistungs­ halbleiter Power Semiconductors Leistungstransistoren Diskrete IGBT Dioden Power Transistors Discrete IGBT Diodes Datenbuch 11.96 Data Book 11.96

marking SH SOT23

Abstract: smd marking 619 BB505B smd marking bb marking 12 SOD123 SOD-123 BB801 BB409 BA 811 SIEMENS marking
Contextual Info: SIEMENS AKTIEN 6E SEL LSCHAF 47E D 0235bDS OOebBST T « S I E G NF-Dioden / AF Diodes PIN Diodes Glass Package Type Max. ratine3s 1/r h mA V Marking Fig. nX 50 150 < 50 0.55 1 < 40 100 < 1 DO-35 DHD - 2 20 o 0.92 0.28 1 1 < 0.7 22 100 100 < 1 < 1.1 SOD-123

BB409

Abstract: BB505B BB801 BB304 BB505 BB204 BB610 BB314 BB505G bb609b
Contextual Info: flñ D E Í f lH 3b 32 0 0 0 1 4 2 5 4 □ | 8236320 SIEMENS/ S P C L , SEMICONDS 88D 14254 D f " 07" Diodes Silicon tuning diodes Glass package DO 35 Characteristics TA = 25°C Type Applications Figure rs C ti/ C t2 V r \/Vr2 PF Vr V BB 409 4 .5 . 5.6

siemens diodes

Abstract: marking ha
Contextual Info: Silicon Schottky Diodes • • • • BAS 40 . General-purpose diodes for high-speed switching Circuit protection Voltage clamping High-level detecting and mixing € - available with CECC quality assessment ESD: Electrostatic discharge sensitive device, observe handling precautions!

FR4 substrate antenna

Abstract: BAR63-02W BAR63 BAR81W SCD80 siemens diodes DECT siemens 140FF
Contextual Info: Application Note No. 049 Discrete & RF Semiconductors DECT Transmit - Receive Switch Using Ultra Small PIN Diodes This application note covers a redesign of a PIN diode switch introduced in application note number 007. It uses Diodes in SCD80 and SOT343 package,