DM-300 R Search Results

cm05fd

Abstract: SAHA Mica capacitors Ashcroft Capacitor mica dm series SAHA cm05 SAHA DM05FA151J-CA CM05 capacitor SERIES cm05 mica 151JO3
Contextual Info: MICA CAPACITORS MICA CAPACITORS Quick Reference Guide DM Series General Specifications by Case Size MIL STYLE - Discontinued DM 05 - DM 10 CM 04 DM 12 - DM 15 CM 05 CAPACITANCE RANGE pF 50 V DC 100 V DC 300 V DC 500 V DC 1000 V DC* 1 to 390 390 200 120 - 1 to 390

Contextual Info: TANTALUM CAPACITORS Cj >ahO Quick Reference Guide DM Series General Specifications by Case Size U E S IG N A I ION DM 05 DM 10 DM 12 DM 15 MIL STYLE CAPACITANCE RANGE d F MAXIMUM 50 V DC CAPACITANCE 100 V DC IN pF IN THE 300 V DC RATED 500 V DC VOLTAGE 1000 V DC*

Contextual Info: Bridge Rectifiers, General purpose Continued 6.0 10 (AMPS) @ Ta (°C) 50 T C (°C ) IFSM(AMPS) 200 10 8.0 50 50 50 100 100 100 100 250 125 300 150 «ft CASE D CASE DM CASEE CASE DM CASE CM 100 CBR 6-L010 CBR 6M-L010 CBR 8-010 CBR 8M-L010 CBR10-J010 200

8MF-L080

Abstract: 8MF-L010
Contextual Info: 4.0 Io AMPS @ t a (°C) 50 @ T c (°C) IFSM (AMPS) 200 6.0 8.0 4.0 @ 25 50 50 50 8.0 @ 100 100 50 100 300 150 250 300 w II n C A SE C A S E DM CASE D C A S E DM C A SE CM 100 C B R 4F-L010 C B R 4MF-L010 C B R 6F-010 C B R 6MF-L010 C B R 8MF-L010 200 C B R 4F-L020

Nylon 6, 10 Glass Fiber filled

Abstract: 213B DIR04HT DMR-04 DI-08S DIR08H
Contextual Info: DI & DM SERIES SPST STANDARD DIP SWITCHES FEATURES High reliability. Self-cleaning contacts. Multi- positions. Process compatible with tape seal. Dual in-line .100" x .300" term. spacing. GENERAL SPECIFICATIONS SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.

DMR02T

Abstract: NDIR08HT DMR01 DMR05T DMR-05 213B NDI01S DMR08TTR DMR-07-T NDIR08H
Contextual Info: NDI & DM SERIES SPST STANDARD DIP SWITCHES FEATURES High reliability. Self-cleaning contacts. Multi- positions. Process compatible with tape seal. Dual in-line .100" x .300" term. spacing. GENERAL SPECIFICATIONS SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.

l010

Abstract: CBR8MF-L010 CBR4F-L010 CBR4F-L020 CBR4F-L040 CBR4F-L060 CBR4F-L080 CBR4F-L100 CBR4MF-L010 CBR4MF-L020
Contextual Info: Bridge Rectifiers, Fast Recovery Continued IO (AMPS) o @TA ( C) 4.0 50 o @TC ( C) 6.0 8.0 4.0 @ 25 50 50 50 8.0 @ 100 100 50 100 250 300 IFSM (AMPS) 200 300 150 CASE CASE D CASE DM CASE CM 100 CBR4F-L010 CBR4MF-L010 CBR6F-010 CBR6MF-L010 CBR8MF-L010 200

dir10

Abstract: DIR04S DI-08H DI08S DIR08ST TR 337 213B DI01S DI10S DIR10HT
Contextual Info: DI & DM SERIES SPST STANDARD DIP SWITCHES FEATURES High reliability. Self-cleaning contacts. Multi- positions. Process compatible with tape seal. Dual in-line .100" x .300" term. spacing. GENERAL SPECIFICATIONS SPECIFICATIONS SUBJECT TO CHANGE WITHOUT NOTICE.

Contextual Info: SKiM 350 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 300 / 230 600 / 460 ± 20 925 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: SKiM 350 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 300 / 230 600 / 460 ± 20 925 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: SKiM 350 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 300 / 230 600 / 460 ± 20 925 – 40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

Contextual Info: SKiM 350 GD 128 DM Absolute Maximum Ratings Values Symbol Conditions 1 VCES VCGR IC ICM VGES Ptot Tj, Tstg) Tcop Visol humidity climate Units 1200 1200 300 / 230 600 / 460 ± 20 925 –40 . +150 (125) 125 2500 RGE = 20 kΩ THS = 25/70 °C THS = 25/70 °C; tp = 1 ms

CBR4M-L020

Abstract: CBR3-P020 CBR4M-L010 3N255-M CBR3-P010 3N256-M CBR4-L010 3N254-M CBR2-L010M CBR2-L020M
Contextual Info: Bridge Rectifiers, General Purpose Continued IO (AMPS) 2.0 3.0 4.0 o @TA ( C) 55 55 2.0 @ 25 50 4.0 @ 25 o @TC ( C) 3.0 @ 50 IFSM (AMPS) 60 CASE 55 CASE B-M 8.0 @ 100 100 50 200 300 150 CASE C CASE D CASE DM CASE DMM VRRM (VOLTS) 100 CBR2-L010M 3N254-M CBR3-P010 CBR4-L010

10MSA

Contextual Info: asymmetrical thyristors thyristors asymétriques Vr r m V d RM Types niOMSON-CSF Tamb = 25°C 't s m * 10 ms A (V) (V) (A) ‘' t m / ' t m (V) 40 A peak @ 20 kHz / Tcase = 80°C (A) Vq T • gt di/dt <DM Tj = 125°C I t = 300 A 2s N 035 235 435 635 835

Contextual Info: E r F REV [ G D E SC R IPT IO N [ H_ D ATE 1 NDTEi 1, MAXIMUM ELECTRIC CURRENT ArV,G, AMP. L6 1D 14 15 2, MAXIMUM E L E C T R IC A L RATING* 1 25eC 300 V D L T S MAX, 3, ENSU LATI DM MATERIAU PC 4, IN SU LATIO N CD LD R' B LU E 5, TERMINAL MATERIAL* BRASS

Contextual Info: A 6 B C D E r F REV [ G DESCRIP TTON [ H_ DATE 1 NDTE; 1, MAXIHUM ELECTRIC CURRENTS 14 A,V/,G, L6 AKP. LD 15 2, M A X IK U K E L E C T R I C A L RATING* 1 2 5 eC 300 V D L T S KAXr 3, ENSUL ATI DM MATERIAL* PC 4, IN S U L A T IO N CDLDR* B L U E 5, TERMINAL MATERIAL* BRASS

TRM401

Abstract: BC140C ST6512 181T2 mt102 MD14 7G13 ST7200 81T2 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. " N ” Channel - SILICON FIELD E F F E C T TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

2SC118

Abstract: MD14 package ST7200 81T2 A249 A298 MT1070 2SC100 2n6135 usaf522es067m
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

MD14

Abstract: usaf521es071m MD14 package 81T2 A249 A298 MT1070 usaf520es070 usaf521es071
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT

2SC114

Abstract: 2SA647 2SC114 transistor usaf516es047m TRM7015 2N2180 MD14 package 81T2 A249 A298
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

NKT 275 transistor

Abstract: 2N6135 MD14 package
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B LINE No. H H TYPE No. ABSOiLOTE M A X . RATIING S Ä 2 5 C I I M IN . M A X Pc T 6 T T

PQ105A1

Abstract: TRIAC 102 102A PQ101A12 PQ101A13 PQ101A14 PQ205A1 PQ208A1
Contextual Info: I " TRIAC. _ - _ _ _ _ Ta=25°C Model No. Absolute Maximum Ratings Repetitive RMS On-State Current Internal Outline Peak Off-State Connection Dimensions Voltage Diagram It (rmsl Conditions (A) (V) Gate Trigger Current Igt (mA) MAX. Conditions Electrical Characteristics

2N683

Abstract: 2N682 TO48 package 2N685 2N692 2N690 JAN 2N690 2n688 2N685 JANTX T4-LDS-0249
Contextual Info: 2N682, 2N683, and 2N685 – 2N692 Available on commercial versions Qualified Levels: JAN and JANTX PNPN Silicon, Reverse-Blocking, Power Triode Thyristors Qualified per MIL-PRF-19500/108 DESCRIPTION This silicon controlled rectifier device is military qualified up to a JANTX level for high-reliability

hp2835

Abstract: HP 2835 hp2835 schottky sine wave inverter circuit diagram AD8132 AD8132AR AD8132ARM AD8132-EVAL AD9203
Contextual Info: a Low-Cost, High-Speed Differential Amplifier AD8132 FEATURES High Speed 350 MHz –3 dB Bandwidth 1200 V/␮s Slew rate Resistor-Settable Gain Internal Common-Mode Feedback to Improve Gain and Phase Balance –68 dB @ 10 MHz Separate Input to Set the Common-Mode Output