DM90N Search Results

2n3824

Abstract: transistor a effet de champ 3824
Contextual Info: 2I\I 3824 F IE L D E FF E C T T R A N S IS T O R , S IL IC O N , N C H A N N E L TRANSISTOR A E F FE T DE CHAMP, SILICIUM , CANAL N Chopper Découpeur Maximum power dissipation Case TO -72 — See outline drawing CB-4 on last pages Dissipation aepuissance maximale

2n2222

Abstract: A2222 2n2222a 2221-2N 2222a 2222 kn a npn 2222 2n2221 amd 2907 2N 2222
Contextual Info: * 2 N 2 2 2 1 ,A * 2 N 2 2 2 2 .A NPN SILICON TRAN SISTO R S, E PIT A X IA L P L A N A R T R A N S IS T O R S N PN S ILICIU M . P L A N A R E P I T A X I A U X Compl. of 2N 2906, A - 2N 2907, A îfc Preferred device D is p o s itif recommandé • L F or BF small or large signal amplification

IC ANA 618

Contextual Info: REVISIONS 0 2 O 4 2 O - 0 IO 8 pl k t s NO. LTR DESCRIPTION DCR/DCN DATE APPROVAL NOTES: I. FOR CONFIGURATION SEE ASSY OWG 020420-0129 WHICH: □ APPLIES DIRECTLY • IS SIMILAR TO THIS ASSY EXCEPT AS MODIFIED BY THIS PARTS LIST SEE NOTE 3 2. FOR INSERT ARRANGEMENT, CONTACT

3866S

Abstract: BF247 equivalent brochage des circuits integres Triac GK transistor bc 564 BC547E TI Small Signal FET Catalogue bcw 91 transistor SESCO SESCOSEM
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

catalogue des transistors bipolaires de puissance

Abstract: brochage des circuits integres H3C1-07 LB 124 transistor equivalente transistor A2222 equivalent of transistor bc212 bc 214 BFw-11 terminals SESCOSEM transistor equivalente transistor BC 141 Brochage BCW91
Contextual Info: GENERAL INFORMATION , , v^ INFORMATION GENERALE ” ; V Index Index 3 ' v.»A* K \ a 1 Selection guide Guide de sélection Qualified devices Dispositifs homologués Quality Qualité Symbols Symboles DATA SHEETS NOTICES SILICON SIGNAL TRANSISTORS TRANSISTORS DE SIGNAL AU SILICIUM

Contextual Info: 2N 2868 NPN SILICON TRANSISTOR, EPITAXIAL PLANAR T R A N S IS T O R N P N S IL I C I U M , P L A N A R E P I T A X IA L • High current switching Comm utation fo rt niveau V CEO 40 V 'c 1A h21E^^0 mA 4 0 -1 1 0 V CEsat 150/15m A ) 0,25 V Maximum power dissipation

C13904

Abstract: SH 1401 BBF75-1401
Contextual Info: DRAWING REVISIONS R ELEASED REVISED -1.206- / 7 3 0 /9 9 J.OD -.721 .3 0 0 MÊÊÊÊmL n .3 7 5 -3 2 U N E F - 2 A THD Ï l-.2 9 7 -Il5 4 l TYP NOTES: 1. MATERIAL/FINISH: A. B. C. D. HOUSINGS: DIE CAST ZINC, NON-MAGNETIC ELECTROLESS NICKEL INSULATORS: POLYMETHYLPENTENE TPX

BC 418

Abstract: bc415b ssv 620 BC416A bc415a bc415 bc415c 416b IC 415 ms 415
Contextual Info: *BC 415 BC 416 PNP SILICON TRANSISTORS, EPITA X IA L PLANAR TRANSISTORS PNP S ILIC IU M , PLA N A R E P IT A X IA U X % Preferred device D is p o s itif recommandé The BC 415 and BC 416 are very low noise transistors intended for input stages in audio ^ frequency amplifiers.