DMN2065UW Search Results
DMN2065UW Price and Stock
Diodes Incorporated DMN2065UWQ-7MOSFET N-CH 20V 3.1A SOT323 |
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DMN2065UWQ-7 | Cut Tape | 45,826 | 1 |
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DMN2065UWQ-7 | Reel | 12 Weeks | 3,000 |
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DMN2065UWQ-7 | 8,025 |
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DMN2065UWQ-7 | Cut Tape | 10 | 5 |
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DMN2065UWQ-7 | 1 |
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DMN2065UWQ-7 | 13,022 |
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DMN2065UWQ-7 | 10 Weeks | 3,000 |
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DMN2065UWQ-7 | 27,000 | 10 Weeks | 3,000 |
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DMN2065UWQ-7 | 24,000 | 1 |
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DMN2065UWQ-7 | 55,822 |
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Diodes Incorporated DMN2065UW-7MOSFET N CH 20V 2.8A SOT323 |
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DMN2065UW-7 | Cut Tape | 15,010 | 1 |
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DMN2065UW-7 | Reel | 12 Weeks | 3,000 |
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DMN2065UW-7 |
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DMN2065UW-7 | 9,000 | 8 Weeks | 3,000 |
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DMN2065UW-7 | 5 |
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DMN2065UW-7 | 3,000 | 10 Weeks | 3,000 |
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DMN2065UW-7 | 16 |
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DMN2065UW-7 | 122,009 |
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Zetex / Diodes Inc DMN2065UW-7Trans MOSFET N-CH 20V 2.8A 3-Pin SOT-323 T/R |
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DMN2065UW-7 | 162,000 | 3,000 |
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Zetex / Diodes Inc DMN2065UWQ-7Trans MOSFET N-CH 20V 2.8A Automotive AEC-Q101 3-Pin SOT-323 T/R |
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DMN2065UWQ-7 | 159,000 | 3,000 |
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Diodes Incorporated DMN2065UW-7 (8232930P)20V N-Channel Enhancement MOSFET SOT-323 |
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DMN2065UW-7 (8232930P) | Bulk | 100 |
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DMN2065UW Datasheets (3)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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DMN2065UW |
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20V N-CHANNEL ENHANCEMENT MODE MOSFET | Original | 198.31KB | 6 | |||
DMN2065UW-7 |
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FETs - Single, Discrete Semiconductor Products, MOSFET N CH 20V 2.8A SOT323 | Original | 6 | ||||
DMN2065UWQ-7 |
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Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Single - MOSFET N-CH 20V 3.1A SOT323 | Original | 449.82KB |
DMN2065UW Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 56mΩ @ VGS = 4.5V 2.8A 65mΩ @ VGS = 2.5V 2.6A 93mΩ @ VGS = 1.8V 2.2A 140mΩ @ VGS = 1.5V 1.8A • • • • • • This MOSFET has been designed to minimize the on-state resistance |
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DMN2065UW AEC-Q101 DS35554 | |
Contextual Info: DMN2065UW 20V N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = 25°C 56mΩ @ VGS = 4.5V 2.8A 65mΩ @ VGS = 2.5V 2.6A 93mΩ @ VGS = 1.8V 2.2A 140mΩ @ VGS = 1.5V 1.8A • • • • • • This MOSFET has been designed to minimize the on-state resistance |
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DMN2065UW AEC-Q101 DS35554 | |
DMN63D8LContextual Info: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at |
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1N4448Wâ BZT52C2V4â BZT52C51â BZT52C13â BZT52B4V7â D1213Aâ DIC-034 DMN63D8L | |
AP3039AM
Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
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2000/53/EC 2000/53/EC 2002/95/EC 2011/65/EU SOR/2014-254 SJ/T11363-2006 GL-106 AP3039AM 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502 |