DMN5L06K Search Results

DMN5L06K

Abstract: DMN5L06K-7
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DMN5L06K

Abstract: DMN5L06K-7 DS30929
Contextual Info: SPICE MODEL: DMN5L06K DMN5L06K Lead-free Green N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR NEW PRODUCT Features • · · · · · · · · Low On-Resistance: RDS ON SOT-23 Very Low Gate Threshold Voltage A Low Input Capacitance Dim Min Max A 0.37 0.51

Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. NEW PRODUCT Features • • • • • • • • • Mechanical Data • • Low On-Resistance Very Low Gate Threshold Voltage 1.0V max

sot-23 body marking DAB

Abstract: DMN5L06KQ-7
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS ADVANCE INFORMATION Features and Benefits • • • • • • • • • 50V Description and Applications Low On-Resistance

Contextual Info: SPICE MODEL: DMN5L06K NEW PRODUCT DMN5L06K N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

DMN5L06KQ-7

Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS • • • • • • • • • 50V Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance

marking code k1

Abstract: DMN5L06K DMN5L06K-7 J-STD-020D
Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • • • Low On-Resistance Very Low Gate Threshold Voltage 1.0V max Low Input Capacitance

Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = +25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS •         50V Low On-Resistance Very Low Gate Threshold Voltage (1.0V max) Low Input Capacitance

Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS • • • • • • • • • Description and Applications Mechanical Data This new generation 50V N-Channel Enhancement Mode MOSFET

Contextual Info: DMN5L06K N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON ID TA = 25°C 2.0Ω @ VGS = 5.0V 300 mA 2.5Ω @ VGS = 2.5V 200 mA V(BR)DSS ADVANCE INFORMATION Features and Benefits • • • • • • • • • 50V Description and Applications Low On-Resistance

Contextual Info: bq500110 SLUSAE0A – NOVEMBER 2010 – REVISED APRIL 2011 www.ti.com Qi Compliant Wireless Power Transmitter Manager Check for Samples: bq500110 FEATURES APPLICATIONS • • 1 • • • • • • Intelligent Control of the Power Transfer between Base Station and Mobile Device

APHBM2012

Abstract: TTL-232R-3V3
Contextual Info: bq500110 www.ti.com SLUSAE0 – NOVEMBER 2010 Wireless Power Transmitter Manager Check for Samples: bq500110 FEATURES 1 • • • • • Intelligent Control of the Power Transfer between Base Station and Mobile Device Conforms to Version 1.0 of the Wireless Power

marking code C66

Contextual Info: bq500110 SLUSAE0A – NOVEMBER 2010 – REVISED APRIL 2011 www.ti.com Qi Compliant Wireless Power Transmitter Manager Check for Samples: bq500110 FEATURES APPLICATIONS • • 1 • • • • • • Intelligent Control of the Power Transfer between Base Station and Mobile Device

CAT7105CA

Abstract: mp1410es G547E2 G547H2 G547F2 P5504EDG equivalent G547I1 SP8K10 SP8K10SFD5TB LD1117Al
Contextual Info: Diodes, Inc. - Cross Reference Industry Part Diodes, Inc. Equivalent Diodes, Inc. Nearest 1.5CE120C 1.5KE120CA N/A 1.5CE120CA 1.5KE120CA N/A 1.5CE12A 1.5KE12A N/A 1.5CE12C 1.5KE12CA N/A 1.5CE12CA 1.5KE12CA N/A 1.5CE13 1.5KE13A N/A 1.5CE130 1.5KE130A N/A 1.5CE130A

EC00296A

Abstract: NTC thermistor 20k HPA687 R85-R86 R92-R94 SCI 103M bq500100 elytone dc buzzer bq500110EVM
Contextual Info: User's Guide SLVU429A – December 2010 – Revised January 2011 bq500110EVM-688 Evaluation Module The bqTESLA wireless power evaluation kit from Texas Instruments is a high-performance, easy-to-use development kit for the design of wireless power solutions. Consisting of a single-channel transmitter and

DMN26D0UFB4-7B

Abstract: SDPB1K10NB-7 DDTC115TUA LMN200B01 DMN5L06TK DMP2012SN DMN5L06DMK MMDT3946LP4 DDTB123EU DDTD114GC
Contextual Info: DATE: 7th April, 2011 PCN #: 2020 PCN Title: Qualification of Additional Wafer Fabrication Sources Dear Customer: This is an announcement of change s to products that are currently being

complementary MOSFET TO252

Abstract: zxmc10a816n DMG2307L DMC2700UDM DMP21D5UFB4
Contextual Info: MOSFETs diodes.com DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS COMPANY OVERVIEW DIODES MEANS MOSFET BUSINESS Diodes Incorporated is a leading global provider of Discrete and

DMG1012

Abstract: ZVN4206GV ZXMS6004FFTA zxmhc3f381n8 DMP2066 DMN2075 DMN2041 ZVN4306G dmp2035 ZXMHC3A01N8
Contextual Info: DIO 1931 MOSFET brochure Final Artwork extra amends 13/1/10 11:51 Page 1 MOSFETs www.diodes.com DIO 1931 MOSFET brochure (Final Artwork extra amends) 13/1/10 11:51 Page 2 DIODES INCORPORATED’S PRODUCTS ARE DESIGNED FOR HIGH PERFORMANCE, ACROSS A WIDE RANGE OF EXISTING AND EMERGING APPLICATIONS

DDZ19

Abstract: BZX84C11TS DMP2012SN DMN5L06DMK BZX84C16TS DDZX8V2C DDZ9V1CS DDZ9690S
Contextual Info: DATE: 3rd May, 2011 PCN #: 2040 PCN Title: Conversion to Copper Bond Wire on Selected Discrete Products Dear Customer: This is an announcement of change s to products that are currently being

DMN63D8L

Contextual Info: DATE: 1st June, 2015 PCN #: 2156 PCN Title: Qualification of "Diodes Technology Cheng Du Company Limited" (CAT) as an Additional Assembly & Test Site for Discrete Products and Conversion to Copper Bond Wire on Select Discrete Products at

Contextual Info: bq500110 SLUSAE0A – NOVEMBER 2010 – REVISED APRIL 2011 www.ti.com Qi Compliant Wireless Power Transmitter Manager Check for Samples: bq500110 FEATURES APPLICATIONS • • 1 • • • • • • Intelligent Control of the Power Transfer between Base Station and Mobile Device

AF9435A

Abstract: DMN5L06TK
Contextual Info: PRODUCT CHANGE NOTICE DCS/PCN-1128_R00 Contact Date: Implementation Date: Alert Category: Alert Type: February 13, 2009 May 14, 2009* Discrete Semiconductors End of Life EOL and Product Name Change PCN #: PCN #: 1128_Rev 00 TITLE Device EOL and Product Name Change

AP3039AM

Abstract: 12SN7 AZ1117EH-3 AP3031K zabg6001 SMBJ11CA ztx689 DMN33D8L ap1901 AP3502
Contextual Info: Diodes Incorporated RoHS & REACH Compliance Re: End of Vehicle Life Directive EVL 2000/53/EC and Annex II (EVL II) 2000/53/EC Restrictions of Hazardous Substances Directive (RoHS) 2002/95/EC (repealed as from 3 January 2013 but listed here for completeness) & 2011/65/EU (RoHS II)

220v AC voltage stabilizer schematic diagram

Abstract: LG color tv Circuit Diagram tda 9370 1000w inverter PURE SINE WAVE schematic diagram schematic diagram atx Power supply 500w TV SHARP IC TDA 9381 PS circuit diagram wireless spy camera 9744 mini mainboard v1.2 sony 279-87 transistor E 13005-2 superpro lx
Contextual Info: QUICK INDEX NEW IN THIS ISSUE! Detailed Index - See Pages 3-24 AD9272 Analog Front End, iMEMS Accelerometers & Gyroscopes . . . . . . 782, 2583 Connectors, Cable Assemblies, IC Sockets . . . . . . . . . . . 28-528 Acceleration and Pressure Sensors . . . . . . . . . . . . . . . . . . . . . . . . . . Page 2585