Channel Type:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:300Ma; Transistor Mounting:Surface Mount; Rds(On) Test Voltage:10V; Gate Source Threshold Voltage Max:1.6V; Power Dissipation:150Mw; No. Of Pins:3Pins Rohs Compliant: No |Diodes Inc. DMN601TK-7.
N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Small Signal Field-Effect Transistor, 0.3A I(D), 60V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET