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    DMOS TRANSISTORS Search Results

    DMOS TRANSISTORS Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    DMOS TRANSISTORS Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Untitled

    Abstract: No abstract text available
    Text: L6207Q DMOS dual full bridge driver Datasheet - production data Description The L6207Q device is a DMOS dual full bridge driver designed for motor control applications, realized in BCDmultipower technology, which combines isolated DMOS power transistors with


    Original     		PDF L6207Q L6207Q VFQFPN48 DocID018993

    DN3145

    Abstract: DN3145N8 DATE CODE FOR SUPERTEX
    Text: DN3145 Initial Release N-Channel Depletion-Mode Vertical DMOS FETs Features Advanced DMOS Technology ❏ High input impedance These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination produces


    Original     		PDF DN3145 100mA, 100mA DN3145 DN3145N8 DATE CODE FOR SUPERTEX

    DN2640

    Abstract: DN2640N3 DN2640ND
    Text: DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven


    Original     		PDF DN2640 300mA DN2640N3 DN2640ND 200mA, 200mA DN2640 DN2640N3 DN2640ND

    TN0702N3

    Abstract: TN0702
    Text: TN0702 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSS / RDS ON ID(ON) VGS(th) BVDGS (max) (min) (max) TO-92 20V 1.3Ω 0.5A 1.0V TN0702N3 7 Features Low Threshold DMOS Technology These low threshold enhancement-mode (normally-off) transistors utilize a vertical DMOS structure and Supertex’s well-proven


    Original     		PDF TN0702 TN0702N3 500mA 200pF TN0702N3 TN0702

    DN2640

    Abstract: DN2640N3 DN2640ND
    Text: – E T E L O S B O – DN2640 Preliminary N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information BVDSX / BVDGX RDS ON (max) IDSS (min) 400V 6.0Ω 300mA Order Number / Package TO-92 Die DN2640N3 DN2640ND Advanced DMOS Technology Features These depletion-mode (normally-on) transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven


    Original     		PDF DN2640 300mA DN2640N3 DN2640ND 200mA, 200mA DN2640 DN2640N3 DN2640ND

    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original     		PDF TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR041105

    Untitled

    Abstract: No abstract text available
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET General Description Features These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing


    Original     		PDF TP5322 110pFmax. -100mA -200mA DSFP-TP5322 NR011905

    voltage drop circuit from 220V to 10V

    Abstract: SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code
    Text: TP5322 TP5322 Initial Release P-Channel Enhancement-Mode Vertical DMOS FET Features General Description ! ! ! ! ! ! ! ! These low threshold enhancement-mode normally-off transistors utilize an advanced vertical DMOS structure and Supertex's well-proven silicon-gate manufacturing process. This


    Original     		PDF TP5322 110pFmax. -100mA -200mA DSFP-TP5322 A042005 voltage drop circuit from 220V to 10V SOT89 FET marking diode p3c TP5322 TP5322K1 TP5322K1-G TP5322N8 FAST DMOS FET Switches MOS P-Channel SOT23 fet sot-89 marking code

    D4710

    Abstract: No abstract text available
    Text: 100MHz CMOS/DMOS Wideband Quad Analog Switch CORPORATION CWB201 FEATURES DESCRIPTION APPLICATIONS Designed for RF and Video Switching the CWB201 is manufactured using Calogic’s high speed CMOS combined with DMOS transistors in a monolithic design resulting in


    Original     		PDF 100MHz CWB201 CWB201 100MHz D4710

    DN5m

    Abstract: sot-89 marking dn
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3545 DSFP-DN3545 A090908 DN5m sot-89 marking dn

    125OC

    Abstract: TN1504 TN1504NW TN1506 TN1506NW TN1510 TN1510NW
    Text: TN1504/TN1506/TN1510 Low Threshold N-Channel Enhancement-Mode Vertical DMOS FETs Features ► ► ► ► ► ► ► ► General Description These low threshold enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s


    Original     		PDF TN1504/TN1506/TN1510 500mA 250mA DSFP-TN1504/TN1506/TN1510 125OC TN1504 TN1504NW TN1506 TN1506NW TN1510 TN1510NW

    Untitled

    Abstract: No abstract text available
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3545 DSFP-DN3545 A071806

    FAST DMOS FET Switches n-CHANNEL

    Abstract: fet free mos 926 FAST DMOS FET Switches p-CHANNEL VC0106 FAST DMOS FET Switches FET P-Channel Switch P-Channel Enhancement FET P-Channel Enhancement Mode Vertical DMOS FET VC0106N6
    Text: VC0106 Complementary Enhancement-Mode Vertical DMOS FET Quad Array Ordering Information BVDSS / BVDGS RDS ON (max) Q1 + Q2 or Q3 + Q4 60V 11Ω Order Number / Package 14-Pin P-Dip VC0106N6 Features Advanced DMOS Technology • 4 independent channels These enhancement-mode (normally-off) DMOS FET arrays


    Original     		PDF VC0106 14-Pin VC0106N6 FAST DMOS FET Switches n-CHANNEL fet free mos 926 FAST DMOS FET Switches p-CHANNEL VC0106 FAST DMOS FET Switches FET P-Channel Switch P-Channel Enhancement FET P-Channel Enhancement Mode Vertical DMOS FET VC0106N6

    DN3545N8-G

    Abstract: DN3545 DN3545N3 DN3545N3-G DN3545N8
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3545 O-243AA OT-89) DSFP-DN3545 A012207 DN3545N8-G DN3545 DN3545N3 DN3545N3-G DN3545N8

    DSFP-DN3545

    Abstract: No abstract text available
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s wellproven silicon-gate manufacturing process. This combination


    Original     		PDF DN3545 DN3545 O-243AA OT-89) DSFP-DN3545 A111006

    DN5MW

    Abstract: DN3545 DN3545N3-G DN3545N8-G 10W010
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3545 DSFP-DN3545 A103108 DN5MW DN3545 DN3545N3-G DN3545N8-G 10W010

    VN3205N6

    Abstract: diode marking CODE VN G1 vn2lw VN3205 SOT89 MARKING CODE 43 diode marking CODE VN S2
    Text: VN3205 N-Channel Enhancement-Mode Vertical DMOS FETs Features General Description ► ► ► ► ► ► ► ► These enhancement-mode normally-off transistors utilize a vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This combination


    Original     		PDF VN3205 MS-001, DSFP-VN3205 A071607 VN3205N6 diode marking CODE VN G1 vn2lw SOT89 MARKING CODE 43 diode marking CODE VN S2

    siemens fet to92

    Abstract: dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G
    Text: Supertex inc. DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3545 DSFP-DN3545 B052009 siemens fet to92 dn5mw 125OC DN3545 DN3545N3-G DN3545N8-G

    mos die

    Abstract: DN2624 DN2624N3 DN2624ND
    Text: DN2624 N-Channel Depletion-Mode Vertical DMOS FETs Ordering Information Order Number / Package BVDSX / BVDGX RDS ON (max) IDSS (min) TO-92 Die 240V 4.0Ω 600mA DN2624N3 DN2624ND Advanced DMOS Technology Features These low threshold depletion-mode (normally-on) transistors


    Original     		PDF DN2624 600mA DN2624N3 DN2624ND mos die DN2624 DN2624N3 DN2624ND

    IN4625

    Abstract: TN2540N8 TP2640N3 P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage MOSFET 400V LND150N3
    Text: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the


    Original     		PDF AN-D27 TN2540N8 125pF LND150N3 IN4625 IN4625 TN2540N8 TP2640N3 P-Channel Depletion-Mode N-Channel Depletion-Mode MOSFET high voltage MOSFET 400V LND150N3

    MOSFET 400V

    Abstract: P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage
    Text: Application Note AN-D27 DMOS Devices For Telecommunications Supertex DMOS transistors provide rugged and efficient solutions for various functions for telecommunication applications. Their combined features of high breakdown voltage, low threshold voltage, low on-resistance, and low input capacitance are the


    Original     		PDF AN-D27 TN2540N8 125pF LND150N3 IN4625 MOSFET 400V P-Channel Depletion-Mode 400v p-channel mosfet depletion 400V power mosfet Depletion MOSFET depletion power MOSFET 400V P-Channel mosfet 400v P-channel mosfet 500V mosfet transistors low voltage

    DN5MW

    Abstract: DN3545 DN3545N3-G DN3545N8-G
    Text: DN3545 N-Channel Depletion-Mode Vertical DMOS FET Features General Description ► ► ► ► ► ► These depletion-mode normally-on transistors utilize an advanced vertical DMOS structure and Supertex’s well-proven silicon-gate manufacturing process. This


    Original     		PDF DN3545 DSFP-DN3545 B051909 DN5MW DN3545 DN3545N3-G DN3545N8-G

    2N6661

    Abstract: No abstract text available
    Text: 2N6661 90V N-channel Enhancement - Mode Vertical DMOS FET 7.95 Transistors MO. Page 1 of 1 Enter Your Part # Home Part Number: 2N6661 Online Store 2N6661 Diodes 90V N -channel Enhancement - Mode Vertical DMOS FET Transistors Integrated Circuits Optoelectronics


    Original     		PDF 2N6661 2N6661 com/2n6661

    transistor s70

    Abstract: Marking S70 pin
    Text: DMOS Transistors N-Channel Enhancement-Mode DMOS Transistors =TO-92 Plastic Package Type Pin Config. Maximum Drain-Source Voltage Maximum Continuous Drain Current Max. Power Dissipation at Tc = 25 °C Drain-Source ON Resistance ') Gate Threshold Voltage


    OCR Scan     		PDF BS108 BS123 BS170 2N7000 O-236 BS850 transistor s70 Marking S70 pin