DN 819 Search Results

SAF7730HV

Abstract: BB 509 varicap diode CP3236D TDA8841 phx4nq60e PHX10NQ60E SAA4849PS Philips SAF7730HV om8839ps saf7730hv 331
Contextual Info: PHILIPS SEMICONDUCTORS DN 54 December 31, 2004 SEE DN54 NOTICE LETTER FOR APPLICABLE LAST TIME BUY TERMS, CONDITIONS AND CODE DEFINITIONS FOR THESE DISCONTINUED PRODUCTS. REFER TO PHILIPS WEB-SITE "http://www.semiconductors.philips.com/eol FOR ADDED INFORMATION.

Philips tea1090

Abstract: tea1090 tea1402 pcf2705p philips TEA1090T SAA7321GP TDA2579A LMT 393 N TDA3653bq TEA5713
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-41 DATED JUNE 30, 1999 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION PHILIPS LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODES COMMENTS

ph 4148 zener diode

Abstract: philips zener diode ph 4148 pcf0700p Zener Diode ph 4148 PCA1318P ck2605 pcf0700p/051 philips Pca1318p on4673 Zener Diode 4148
Contextual Info: PHILIPS SEMICONDUCTORS PRODUCT DISCONTINUATION NOTICE NUMBER DN-40 DATED DECEMBER 31, 1998 EXHIBIT 'A' PHILIPS PHILIPS PHILIPS PART NUMBER PKG PART DESCRIPTION LAST TIME LAST TIME REPLACEMENT STATUS 12 NC NUMBER BUY DATE DLVY DATE PART CODE S COMMENTS DISCONTINUED INTEGRATED CIRCUIT PRODUCTS

Z 151 VARISTOR

Abstract: DIN 43650 c DIN 43650 DIN 43650 form c K134 DIN 43650 form a 6012 aluminium 008408Q
Contextual Info: 3/2-Wege-Mini-Magnetventil Typ 6012 Direktwirkend; 0 bis 10 bar; DN 1,2 und 1,6 mm; M5, G 1/8 und Flansch TECHNISCHE DATEN Gehäusewerkstoff Messing, Polyamid PA, Edelstahl 1.4305 Dichtwerkstoff FPM Medien neutrale Gase und Flüssigkeiten, wie z. B. Druckluft,

tda8841 s1

Abstract: saf7730hv om8839ps phx4nq60e TDA8842 s1 Philips SAF7730HV CP3236D BB 505 Varicap Diode TDA8841 S1 datasheet tda8844s1
Contextual Info: Philips Semiconductors December 31, 2004 Attention: Materials Manager, Purchasing Manager and Philips' Products Manager Subject: Philips Semiconductors' Product Discontinuation Notice Number DN-54 Dear Philips Semiconductors Customer or Distributor: This letter confirms to your company that Philips Semiconductors is discontinuing the manufacture of a number of its'

9SMnPb28k

Abstract: 6012 aluminium oil and gas valves DIN 43650 form c water solenoid valve gas solenoid valve hydraulic solenoid valve 008409R
Contextual Info: Miniature Solenoid Valve - General Purpose Type 6012 Sub-base Connection 3/2-Way; sub-base connection; DN 1,2-1,6; 0-10 bar Advantages/Benefits Coil can be changed easily with valve in place Coil can be locked in 4x 90 o positions or move freely between, as required

9SMnPb28k

Abstract: water solenoid valve 6012 aluminium
Contextual Info: Miniature Solenoid Valve - General Purpose Type 6011 Sub-base Connection 2/2-Way; sub-base connection; DN 1,2-2,4; 0-21 bar Advantages/Benefits Coil can be changed easily with valve in place Coil can be locked in 4x 90 o positions or move freely between, as required

M66259FP

Contextual Info: MITSUBISHI <DIGITAL ASSP> M66259FP 8192 x 8-BIT x 2 LINE MEMORY DESCRIPTION PIN CONFIGURATION TOP VIEW The M66259 is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO (First In First Out) structure consisting of 8192 words x 8 bits x 2.

M66282FP

Contextual Info: MITSUBISHI <DIGITAL ASSP> M66282FP 8192 x 8-BIT LINE MEMORY DESCRIPTION The M66282FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words x 8 bits.

0D96

Abstract: 28P2W-C M66255FP photocopiers Nk d9
Contextual Info: MITSUBISHI MITSUBISHI 〈DIGITAL 〈DIGITAL ASSP〉 ASSP〉 M66255FP M66255FP 8192 x 10-BIT LINE MEMORY FIFO 8192 × 10-BIT LINE MEMORY (FIFO) DESCRIPTION The M66255FP is a high-speed line memory with a FIFO (First In First Out) structure of 8192-word × 10-bit configuration which uses high-performance silicon gate CMOS process technology.

m66258fp

Abstract: M66258
Contextual Info: MITSUBISHI <DIGITAL ASSP> M66258FP 8192 x 8-BIT LINE MEMORY DESCRIPTION The M66258FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words x 8 bits.

28P2W-C

Abstract: M66255FP PRSP0028DB-B
Contextual Info: M66255FP 8192 x 10-Bit Line Memory FIFO REJ03F0249-0200 Rev.2.00 Sep 14, 2007 Description The M66255FP is a high-speed line memory with a FIFO (First In First Out) structure of 8192-word × 10-bit configuration which uses high-performance silicon gate CMOS process technology.

M66282FP

Abstract: PRSP0024GA-A
Contextual Info: M66282FP 8192 x 8-Bit Line Memory REJ03F0255-0200 Rev.2.00 Sep 14, 2007 Description The M66282FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words × 8 bits.

M66258

Abstract: M66258FP
Contextual Info: M66258FP 8192 x 8-Bit Line Memory REJ03F0252-0200 Rev.2.00 Sep 14, 2007 Description The M66258FP is high speed line memory that uses high performance silicon gate CMOS process technology and adopts the FIFO First In First Out structure consisting of 8192 words × 8 bits.

SPRA534

Contextual Info: SN74V263, SN74V273, SN74V283, SN74V293 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS669C – JUNE 2001 – REVISED APRIL 2002 D D D D D D D D D D D Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

SN74V3640

Abstract: SN74V3640-6 SN74V3650 SN74V3650-6 SN74V3660 SN74V3660-6 SN74V3670 SN74V3680 SN74V3690
Contextual Info: SN74V3640, SN74V3650, SN74V3660, SN74V3670, SN74V3680, SN74V3690 1024 x 36, 2048 × 36, 4096 × 36, 8192 × 36, 16384 × 36, 32768 × 36 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS668A – NOVEMBER 2001 – REVISED MARCH 2003 D D D D D D D D D Choice of Memory Organizations

Contextual Info: SN74V263, SN74V273, SN74V283, SN74V293 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS669D – JUNE 2001 – REVISED FEBRUARY 2003 D D D D D D D D D D D Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication

Contextual Info: SN74V263, SN74V273, SN74V283, SN74V293 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS669D – JUNE 2001 – REVISED FEBRUARY 2003 D D D D D D D D D D D Choice of Memory Organizations – SN74V263 – 8192 × 18/16384 × 9

Contextual Info: SN74V263-EP, SN74V273-EP, SN74V283-EP, SN74V293-EP 8192 x 18, 16384 × 18, 32768 × 18, 65536 × 18 3.3-V CMOS FIRST-IN, FIRST-OUT MEMORIES SCAS695A – JUNE 2003 – REVISED JUNE 2003 D D D D D D D D D D D D D D D Controlled Baseline – One Assembly/Test Site, One Fabrication