DO- DIODE MARKING S6 Search Results

ZTF 160

Abstract: s60sc4mt
Contextual Info: Schottky Barrier Diode Twin Diode U$mm S60SC4MT OUTLINE U n it i m m Package : MTO-3PT 40V 60A Feature Tj=150°C Tj=150°C 0 j C Ä t y ] i£ U Small 6 \c High lo Rating Main Use • • • • • DC/DC nyjï— 2 • m m . 'f - u . o m m Switching Regulator

Contextual Info: S60D150C – S60D200C 60A HIGH VOLTAGE DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

s60d40c

Abstract: s60d40
Contextual Info: S60D30C – S60D100C 60A DUAL SCHOTTKY BARRIER RECTIFIER WON-TOP ELECTRONICS Pb Features  Schottky Barrier Chip       Guard Ring for Transient Protection Low Forward Voltage Drop Low Power Loss, High Efficiency High Surge Current Capability

Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

SD103AW

Abstract: SD103BW SD103CW continental SOD123 103CW
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SCHOTTKY BARRIER SWITCHING DIODE SD103AW - SD103CW SOD-123 PLASTIC PACKAGE Marking: Date Code Polarity: Cathode Band SD103AW=S4 SD103BW=S5 SD103CW=S6 ABSOLUTE MAXIMUM RATINGS

BAS40L

Abstract: marking code s6 SOD-882L
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D891 BOTTOM VIEW BAS40L Schottky barrier diode Product specification 2003 May 20 Philips Semiconductors Product specification Schottky barrier diode BAS40L FEATURES DESCRIPTION • Low diode capacitance Planar Schottky barrier diode with an integrated guard ring

smd schottky diode s6

Abstract: smd schottky diode marking s6 smd schottky diode s6 16 marking code s6 diode smd marking code 76
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET 1PS76SB62 Schottky barrier diode Product specification Supersedes data of 2001 Feb 16 2004 Jan 26 Philips Semiconductors Product specification Schottky barrier diode 1PS76SB62 FEATURES PINNING • Ultra high switching speed

JEDEC sod323

Abstract: smd schottky diode s6 1PS76SB62 13845 1PS66SB62 SC-76 diode smd marking code 76 smd schottky diode marking s6 philips package information
Contextual Info: 1PS66SB62; 1PS76SB62 40 V, 20 mA low Cd Schottky barrier diodes Rev. 03 — 24 November 2004 Product data sheet 1. Product profile 1.1 General description Planar low capacitance Schottky barrier diodes with an integrated guard ring for stress protection, encapsulated in very small SMD plastic packages.

Si1907DL

Abstract: Si1907DL-T1
Contextual Info: Si1907DL Vishay Siliconix Dual P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) rDS(on) (Ω) ID (A) 0.650 at VGS = - 4.5 V ± 0.56 0.925 at VGS = - 2.5 V ± 0.47 1.310 at VGS = - 1.8 V ± 0.39 • TrenchFET Power MOSFETS: 1.8 V Rated Pb-free

FP6736

Abstract: FP6736S5P marking code C4 Sot 23-5 sot-23-5 marking cy sot-23-5 5R STEP UP DC DC SOT-23-6 FP6736S6 sot-23-6 marking MOSFET P SOT-23-6 marking E1 sot236
Contextual Info: FP6736 85T Current-Mode fitipower integrated technology lnc. 1.4MHz SOT23 Step-Up DC/DC Converter Description Features The FP6736 is a current-mode, pulse-width modulation and step-up DC/DC converter. The built-in high voltage N-channel MOSFET allows FP6736 for step-up applications with up to 30V

Si1303DL

Contextual Info: Si1303DL Vishay Siliconix P-Channel 2.5-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.430 at VGS = - 4.5 V - 0.72 0.480 at VGS = - 3.6 V - 0.68 0.700 at VGS = - 2.5 V - 0.56 • TrenchFET Power MOSFETs • 2.5 V Rated Pb-free

SOT-363 marking CF

Abstract: si1988 SI1988DH 62109 74296
Contextual Info: Si1988DH Vishay Siliconix New Product Dual N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A)a 0.168 at VGS = 4.5 V 1.3a 0.200 at VGS = 2.5 V 1.3a 0.250 at VGS = 1.8 V a 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS

S6046

Contextual Info: Si3446ADV Vishay Siliconix New Product N-Channel 20-V D-S MOSFET PRODUCT SUMMARY VDS (V) 20 FEATURES rDS(on) (Ω) ID (A)a 0.037 at VGS = 4.5 V 6 0.065 at VGS = 2.5V 6 Qg (Typ) • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package

"marking code D2"

Abstract: 74343 Si1970DH Si1970DH-T1-E3
Contextual Info: Si1970DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.225 at VGS = 4.5 V 1.3a 0.345 at VGS = 2.5 V 1.3a • TrenchFET Power MOSFET Qg (Typ) APPLICATIONS 1.15 nC SOT-363 SC-70 (6-LEADS)

Si1488DH

Contextual Info: Si1488DH Vishay Siliconix New Product N-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 20 rDS(on) (Ω) ID (A) 0.049 at VGS = 4.5 V 6.1a 0.056 at VGS = 2.5 V 5.7 0.065 at VGS = 1.8 V • TrenchFET Power MOSFET • 100 % Rg & UIS Tested Qg (Typ)

Si1470DH

Abstract: Si1470DH-T1-E3 Si1470
Contextual Info: Si1470DH Vishay Siliconix New Product N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A) 0.066 at VGS = 4.5 V 4.0a 0.095 at VGS = 2.5 V 4.0 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 4.85 RoHS APPLICATIONS

Si3437DV

Abstract: SI3437 SI3437DV-T1-E3 S-62238
Contextual Info: Si3437DV Vishay Siliconix New Product P-Channel 150-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 150 rDS(on) (Ω) ID (A)a 0.75 at VGS = - 10 V - 1.4 0.79 at VGS = - 6 V - 1.3 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) RoHS 8 nC

74398

Abstract: Si1972DH Si1972DH-T1-E3 061c "MARKING CODE G2"
Contextual Info: Si1972DH Vishay Siliconix New Product Dual N-Channel 30-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) 30 rDS(on) (Ω) ID (A)a 0.190 at VGS = 10 V 1.3 0.344 at VGS = 4.5 V 1.3 Qg (Typ) • TrenchFET Power MOSFET APPLICATIONS 0.91 nC SOT-363 SC-70 (6-LEADS)

Si1407DL

Abstract: Si1407DL-T1 Si1407DL-T1-E3
Contextual Info: Si1407DL Vishay Siliconix P-Channel 1.8-V G-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 12 rDS(on) (Ω) ID (A) 0.130 at VGS = - 4.5 V - 1.8 0.170 at VGS = - 2.5 V - 1.5 0.225 at VGS = - 1.8 V - 1.3 • TrenchFET Power MOSFETs • 1.8 V Rated Pb-free Available

74249

Abstract: P-Channel 200V MOSFET TSOP6 Si3475DV
Contextual Info: Si3475DV Vishay Siliconix New Product P-Channel 200-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 200 rDS(on) (Ω) ID (A)a 1.61 at VGS = - 10 V - 0.95 1.65 at VGS = - 6 V - 0.93 • TrenchFET Power MOSFET • 100 % Rg and UIS Tested Qg (Typ) 8 nC RoHS

GP2Y1010AU0F

Abstract: SCHEMATIC Air Purifier Schematic GP2Y10 Air Purifier Schematic dust sensor GP2Y1010AU GP2Y1010F smoke alarm project smoke detector schematic schematic sharp rohs marking
Contextual Info: GP2Y1010AU0F GP2Y1010AU0F • Description GP2Y1010AU0F is a dust sensor by optical sensing system. An infrared emitting diode IRED and an phototransistor are diagonally arranged into this device. It detects the reflected light of dust in air. Especially, it is effective to detect very fine particle

Si5483DU-T1-E3

Abstract: si5483
Contextual Info: Si5483DU Vishay Siliconix P-Channel 20-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) - 20 rDS(on) (Ω) ID (A) 0.030 at VGS = - 4.5 V - 12a 0.043 at VGS = - 2.5 V - 12a • TrenchFET Power MOSFET • New Thermally Enhanced PowerPAK® ChipFET® Package - Small Footprint Area

SS6P4C

Abstract: S64c J-STD-002 "Schottky Diode" SMPC
Contextual Info: New Product SS6P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power

SS6P4C

Contextual Info: New Product SS6P4C Vishay General Semiconductor High Current Density Surface Mount Dual Common-Cathode Schottky Rectifier FEATURES • Very low profile - typical height of 1.1 mm eSMP TM Series • Ideal for automated placement • Low forward voltage drop, low power