DO-7 DIODE ISS Search Results

iss86

Abstract: 1SS119
Contextual Info: DIODE SERIES •î i t | ' > a 7 K Schottky barrier diodes for detectors & mixers Ratings Application Package Code DO-35 Detector switching Type No. isstoe 1SS108 1SS196 10 30 max 4.5 30 15 30 3 4.5 1.0 15 3 35 ‘ 35 ‘ 30 15 15 30 15 [0.6] [0.7] 1.0 [10]

Contextual Info: 1 N 5 7 2 8 thru Microsemi Corp. 1 N f The diode expens 5 7 5 7 S C O r rS D A L E , A l F of m ore inform ation call: 602 94I-630Ö FEATURES • ZENER VOLTAGE 4.7 TO 75 V SILICON 400 mW ZENER DIODES • SMALL RUGGEO DOUBLE SLUG CONSTRUCTION DO-35 • CONSTRUCTED WITH AN OXIDE PASSIVATED ALL OIFFUSED DIE

1N4099

Abstract: 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4135
Contextual Info: 1989963 CENTRAL S EM IC O N D U C T O R 92D DE • n f i T T t i a 00390 QDOOBTO b D T - <7 - 0 7 | " 1N4099 thru 1N4135 ee-c^f; .cibi.-, B2bLCi@ HfiEâbS6Ê@ ü Ç j & Ë f Ë 250mW ZENER DIODE 5% TOLERANCE g KÆE,Ê8E Central semiconductor Corp. JEDEC DO-35 CASE

2A3 zener diode

Abstract: 414 B zenar diode 1n475ba dioda zener colour code diode zener 1N474OA zener color codes 1N475B zener diodes color coded diode zener
Contextual Info: T A IW A N f f i SEMICONDUCTOR 1 N 4 7 4 0 A - 1 M 2 Û Û Z Glass Passivated Junction Silicon Zener Diode S i R o H S DO-41 C O M P L IA N C E .1 0 7 2 .7 ; .0 ( Î S / I J .MO |2.0¡- M IN . DIA. Features ❖ ❖ ❖ <❖ <❖ Low p ro file p a cka g e

diode aa119

Abstract: AA119 aa119 diode Germanium Diode aa119 2AA119 2-AA119 7Z32 diode germanium AA119 2aa119 diode A119
Contextual Info: A A 119 2-AA119 POINT CONTACT DIODE G erm anium point contactdiode in a subm iniature all g lass DO-7 envelope p rim a rily intended fo r use in a .m . d etec to r and ra tio d etec to r c irc u its . QUICK REFERENCE DATA Continuous re v e rse voltage VR m ax.

1N471A

Abstract: 1M200Z 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A
Contextual Info: TAIWAN SEMICONDUCTOR 1 N4 7 4 1 A - 1 M 2Q0 Z Glass Passivated Junction Silicon Zener Diode b RoHS COM PLIANCE DO-41 -3 Ü - .107 2.7J Featu res 1.0 (as.Jj .oao (3 />) OIA. L o w p ro file p a c k a g e B u ilt-in s tra in re lie f G la s s p a s s iv a te d ju n c tio n

AMD a 462 socket pinout

Abstract: AMD 462 socket pinout motherboard temperature sensor alcohol sensor data sheet testing motherboards components using multimeter "fine wire welder" how to check ic on motherboard 462 motherboard IC Temperature Sensors socket 462 pinout
Contextual Info: Methodologies for Measuring Temperature on AMD Athlon and AMD Duron™ Processors Application Note Publication # 24228 Revision: E Issue Date: January 2003 2002, 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,

8D140

Abstract: CQL71A 9D140 CONNECTOR Ntype laser diode MCA321 7 pin potentiometer
Contextual Info: PHILIPS 41E INTERNATIONAL D m 711002b APR 0 3 D D E M lb ? T E iP H IN pHXjrO 1990 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 FEATURES DISCRETE SEMICONDUCTORS tab 2 • High power collimated beam

SS14 TOSHIBA

Abstract: smd zener diode color band zener DIODE smd color marking smd code marking ss14 smd marking code ss14 ,zener DIODE smd color marking smd ss12 SS14 tip smd diode code ss12 HSMA5817
Contextual Info: HI-SINCERITY Spec. No. : HSMA200301 Issued Date : 2000.01.15 Revised Date : 2003.05.23 Page No. : 1/7 MICROELECTRONICS CORP. HSMA5817 thru HSMA5819 1.0 AMP. SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Features • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0

"WORM"

Contextual Info: P H IL IP S 41E IN T E R N A T IO N A L i> m 711002b oosm b? IPHIN T PI W APR 0 3 1990 F - t t - V z . 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 CQL71A Medium power collimator pen FEATURES OPERATIONAL HAZARD - SEMICONDUCTOR LASER DIODE

Contextual Info: ODHKGA4133-03 Electronic Components KGA4133 Issue Date: June. 25, 2004 12.5 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION KGA4133 is a 12.5 Gbps single-ended transimpedance amplifier designed for high speed optical receiver applications. The IC is fabricated by using 0.1 µm gate length P-HEMT technologies and has

Contextual Info: ODLOL492L-01 Electronics Components OL492L Issue Date:May.2002 Preliminary 1480nm DFB Laser Diode Uncooled Coax Module with Single Mode Fiber, Built-in Isolator 1. DESCRIPTION OL492L is a 1480nm DFB Laser Diode in a panel Mountable coaxial package with single mode fiber

KGA4183

Contextual Info: ODHKGA4183-01 Electronic Components KGA4183 Issue Date: Mar. 9, 2007 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 µm gate length P-HEMTs for high-speed optical communication. The IC has a good linear performance.

Semiconductor Laser International

Abstract: CURF5
Contextual Info: PH ILIP S INTERNATIONAL MI E D B 711062b 002417^ t. E P H I N 'h ilip s C o m p o n e n ts Data sheet status Preliminary specification code 9397 251 40142 date of Issue March 1990 CQL90/D Visible light emitting collimator pen FEATURES • • • • Low power

KGA4163

Contextual Info: ODHKGA4163-01 Electronic Components KGA4163 Issue Date:Nov. 14, 2005 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has high sensitivity and overload performance.

Contextual Info: ODHKGA4153-02 Electronic Components KGA4153 Issue Date: Nov. 14, 2005 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has high sensitivity and overload performance.

AR177

Abstract: bipolar transistor tester IC5-IC6 power supply mje1300
Contextual Info: AR177 PROPER TESTING CAN MAXIMIZE PERFORMANCE IN POWER MOSFETs Prepared by Kim Gauen and Warren Schultz Motorola Inc. Reprinted with permission of EDN. May, 1987 issue. 1987 Cahner's Publishing. All rights reserved. M MOTOROLA Semiconductor Products Inc.

sine wave generator using LM358

Abstract: LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
Contextual Info: University of North Carolina, Charlotte Department of Electrical and Computer Engineering ECGR 3157 EE Design II Spring 2011 Lab 1 Power Amplifier Circuits Issued: January 19, 2011_Due: February 4, 2011 In this assignment, you will build some basic amplifier circuits. Many of these amplifiers will

Contextual Info: ODHKGA4121D-05 Electronic Components KGA4121D Issue Date:May. 20, 2003 Preliminary 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10 Gbps transimpedance amplifier is fabricated 0.1 µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity performance.

1550nm FP Laser Diode with butterfly pin package

Abstract: W3347 w3112 optical fiber 1525 nm W5817 W4135 laser DFB 1550nm 10gb W3819 w5252
Contextual Info: Electronics Components OL5104L-40-Wnnnn ODLOL5104L-40-Wnnnn-02 Issue Date:Aug. 2002 Preliminary 1550nm/40mW Laser Diode Butterfly Module with PMF, Built in Cooler, Isolator. 1. DESCRIPTION OL5104L-40-Wnnnn is a 1550nm Laser Diode in Butterfly package with PMF.

laser 1310nm BUTTERFLY

Abstract: PD submount
Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLW581A series Document No. : HUW0825010-01A Date of issue : September 10, 2008 Preliminary Specification of 1.31µm DFB Laser Diode Module for wireless communication system application SLW581A series RoHS Compliant

dfb 10mw

Contextual Info: Sumitomo Electric Industries, Ltd. Part No. : SLW541A series Document No. : HUW0825002-01A Date of issue : May 14, 2008 Technical Specification of 1.47-1.61µm DFB Laser Diode Module for wireless communication system application SLW541A series RoHS Compliant

KGA4143

Abstract: receiver pin diode for 10Gbps
Contextual Info: ODHKGA4143-01 Electronic Components KGA4143 Issue Date:Apr 7, 2002 Preliminary 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION KGA4143 is a +3.3V high speed transimpedance amplifier designed for 10Gbps optical receiver applications. The IC is fabricated by using 0.1 µm P-HEMT technologies and has high sensitivity and overload performance.

FCR455

Contextual Info: SEMICONDUCTOR TECHNICAL DATA KIC9243F c 2m os d i g i t a l in t e g r a t e d c ir c u it INFRARED REMOTE CONTROL SIGNAL TRANSMISSION LSI FOR AUDIO SYSTEM AND OTHERS. The KIC9243F is infrared remote control signal transm­ ission LSI which is suited for remote control of audio system,