AMD a 462 socket pinout
Abstract: AMD 462 socket pinout motherboard temperature sensor alcohol sensor data sheet testing motherboards components using multimeter "fine wire welder" how to check ic on motherboard 462 motherboard IC Temperature Sensors socket 462 pinout
Text: Methodologies for Measuring Temperature on AMD Athlon and AMD Duron™ Processors Application Note Publication # 24228 Revision: E Issue Date: January 2003 2002, 2003 Advanced Micro Devices, Inc. All rights reserved. The contents of this document are provided in connection with Advanced Micro Devices,
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SS14 TOSHIBA
Abstract: smd zener diode color band zener DIODE smd color marking smd code marking ss14 smd marking code ss14 ,zener DIODE smd color marking smd ss12 SS14 tip smd diode code ss12 HSMA5817
Text: HI-SINCERITY Spec. No. : HSMA200301 Issued Date : 2000.01.15 Revised Date : 2003.05.23 Page No. : 1/7 MICROELECTRONICS CORP. HSMA5817 thru HSMA5819 1.0 AMP. SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS Features • The plastic package carries Underwriters Laboratory Flammability Classification 94V-0
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HSMA200301
HSMA5817
HSMA5819
260oC/10
DO-214AC
MIL-STD-750,
29kHz,
DO-214AC
HSMA5817,
HSMA5818,
SS14 TOSHIBA
smd zener diode color band
zener DIODE smd color marking
smd code marking ss14
smd marking code ss14
,zener DIODE smd color marking
smd ss12
SS14 tip
smd diode code ss12
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Untitled
Abstract: No abstract text available
Text: ODHKGA4133-03 Electronic Components KGA4133 Issue Date: June. 25, 2004 12.5 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION KGA4133 is a 12.5 Gbps single-ended transimpedance amplifier designed for high speed optical receiver applications. The IC is fabricated by using 0.1 µm gate length P-HEMT technologies and has
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KGA4133
ODHKGA4133-03
KGA4133
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Untitled
Abstract: No abstract text available
Text: ODLOL492L-01 Electronics Components OL492L Issue Date:May.2002 Preliminary 1480nm DFB Laser Diode Uncooled Coax Module with Single Mode Fiber, Built-in Isolator 1. DESCRIPTION OL492L is a 1480nm DFB Laser Diode in a panel Mountable coaxial package with single mode fiber
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OL492L
ODLOL492L-01
1480nm
OL492L
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KGA4183
Abstract: No abstract text available
Text: ODHKGA4183-01 Electronic Components KGA4183 Issue Date: Mar. 9, 2007 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 µm gate length P-HEMTs for high-speed optical communication. The IC has a good linear performance.
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KGA4183
ODHKGA4183-01
10Gbps
840ohm
99mm2
KGA4183
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Untitled
Abstract: No abstract text available
Text: ODLOLx109L-5-01 Electronics Components OLx109L-5 Series Issue Date: May 2002 Preliminary 5mW Laser Diode Butterfly Modules with Single Mode Fiber, Built in Cooler, Isolator. 1. DESCRIPTION OLx109L-5 Series are Laser Diode in Butterfly package with SMF. 2. FEATURES
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OLx109L-5
ODLOLx109L-5-01
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KGA4163
Abstract: No abstract text available
Text: ODHKGA4163-01 Electronic Components KGA4163 Issue Date:Nov. 14, 2005 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has high sensitivity and overload performance.
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KGA4163
ODHKGA4163-01
10Gbps
09mm2
KGA4163
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Untitled
Abstract: No abstract text available
Text: ODHKGA4153-02 Electronic Components KGA4153 Issue Date: Nov. 14, 2005 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10Gbps transimpedance amplifier is fabricated 0.1 m gate length P-HEMTs for high-speed optical communication. The IC has high sensitivity and overload performance.
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KGA4153
ODHKGA4153-02
10Gbps
-21dBm
09mm2
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sine wave generator using LM358
Abstract: LM358 vs LM741 sine wave generator using opamp lm358 sine wave generator circuit lm358 gain formula lf356 op-amp opamp Lm358 pin function LM358 microphone electrical power generator using transistor transistor based class A amplifier lab
Text: University of North Carolina, Charlotte Department of Electrical and Computer Engineering ECGR 3157 EE Design II Spring 2011 Lab 1 Power Amplifier Circuits Issued: January 19, 2011_Due: February 4, 2011 In this assignment, you will build some basic amplifier circuits. Many of these amplifiers will
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LM741
sine wave generator using LM358
LM358 vs LM741
sine wave generator using opamp
lm358 sine wave generator circuit
lm358 gain formula
lf356 op-amp
opamp Lm358 pin function
LM358 microphone
electrical power generator using transistor
transistor based class A amplifier lab
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Untitled
Abstract: No abstract text available
Text: ODHKGA4121D-05 Electronic Components KGA4121D Issue Date:May. 20, 2003 Preliminary 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION Oki’s 10 Gbps transimpedance amplifier is fabricated 0.1 µm gate length P-HEMTs for high-speed optical communication. The IC has a large transimpedance, high sensitivity performance.
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KGA4121D
ODHKGA4121D-05
-21dBm
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1550nm FP Laser Diode with butterfly pin package
Abstract: W3347 w3112 optical fiber 1525 nm W5817 W4135 laser DFB 1550nm 10gb W3819 w5252
Text: Electronics Components OL5104L-40-Wnnnn ODLOL5104L-40-Wnnnn-02 Issue Date:Aug. 2002 Preliminary 1550nm/40mW Laser Diode Butterfly Module with PMF, Built in Cooler, Isolator. 1. DESCRIPTION OL5104L-40-Wnnnn is a 1550nm Laser Diode in Butterfly package with PMF.
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OL5104L-40-Wnnnn
ODLOL5104L-40-Wnnnn-02
1550nm/40mW
OL5104L-40-Wnnnn
1550nm
14-pin
10Gb/s)
1550nm FP Laser Diode with butterfly pin package
W3347
w3112
optical fiber 1525 nm
W5817
W4135
laser DFB 1550nm 10gb
W3819
w5252
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laser 1310nm BUTTERFLY
Abstract: PD submount
Text: Sumitomo Electric Industries, Ltd. Part No. : SLW581A series Document No. : HUW0825010-01A Date of issue : September 10, 2008 Preliminary Specification of 1.31µm DFB Laser Diode Module for wireless communication system application SLW581A series RoHS Compliant
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SLW581A
HUW0825010-01A
laser 1310nm BUTTERFLY
PD submount
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dfb 10mw
Abstract: No abstract text available
Text: Sumitomo Electric Industries, Ltd. Part No. : SLW541A series Document No. : HUW0825002-01A Date of issue : May 14, 2008 Technical Specification of 1.47-1.61µm DFB Laser Diode Module for wireless communication system application SLW541A series RoHS Compliant
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SLW541A
HUW0825002-01A
1000ppyls
dfb 10mw
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KGA4143
Abstract: receiver pin diode for 10Gbps
Text: ODHKGA4143-01 Electronic Components KGA4143 Issue Date:Apr 7, 2002 Preliminary 10 Gbps Transimpedance Amplifier IC GENERAL DESCRIPTION KGA4143 is a +3.3V high speed transimpedance amplifier designed for 10Gbps optical receiver applications. The IC is fabricated by using 0.1 µm P-HEMT technologies and has high sensitivity and overload performance.
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ODHKGA4143-01
KGA4143
KGA4143
10Gbps
-19dBm
15psec
receiver pin diode for 10Gbps
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Untitled
Abstract: No abstract text available
Text: 1 N 5 7 2 8 thru Microsemi Corp. 1 N f The diode expens 5 7 5 7 S C O r rS D A L E , A l F of m ore inform ation call: 602 94I-630Ö FEATURES • ZENER VOLTAGE 4.7 TO 75 V SILICON 400 mW ZENER DIODES • SMALL RUGGEO DOUBLE SLUG CONSTRUCTION DO-35 • CONSTRUCTED WITH AN OXIDE PASSIVATED ALL OIFFUSED DIE
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94I-630Ã
DO-35
5729B
375-inches
N5757
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1N4099
Abstract: 1N4100 1N4101 1N4102 1N4103 1N4104 1N4105 1N4106 1N4135
Text: 1989963 CENTRAL S EM IC O N D U C T O R 92D DE • n f i T T t i a 00390 QDOOBTO b D T - <7 - 0 7 | " 1N4099 thru 1N4135 ee-c^f; .cibi.-, B2bLCi@ HfiEâbS6Ê@ ü Ç j & Ë f Ë 250mW ZENER DIODE 5% TOLERANCE g KÆE,Ê8E Central semiconductor Corp. JEDEC DO-35 CASE
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1N4099
1N4135
250mW
DO-35
1N4118
1N4119
1N4120
1N4121
1N4122
1N4100
1N4101
1N4102
1N4103
1N4104
1N4105
1N4106
1N4135
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2A3 zener diode
Abstract: 414 B zenar diode 1n475ba dioda zener colour code diode zener 1N474OA zener color codes 1N475B zener diodes color coded diode zener
Text: T A IW A N f f i SEMICONDUCTOR 1 N 4 7 4 0 A - 1 M 2 Û Û Z Glass Passivated Junction Silicon Zener Diode S i R o H S DO-41 C O M P L IA N C E .1 0 7 2 .7 ; .0 ( Î S / I J .MO |2.0¡- M IN . DIA. Features ❖ ❖ ❖ <❖ <❖ Low p ro file p a cka g e
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1N4740A
-1M200Z
DO-41
MIL-STD-202.
1N4740ATHRU
1M200Z)
10-MAXIMUM
2A3 zener diode
414 B zenar diode
1n475ba
dioda zener
colour code diode zener
1N474OA
zener color codes
1N475B
zener diodes color coded
diode zener
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diode aa119
Abstract: AA119 aa119 diode Germanium Diode aa119 2AA119 2-AA119 7Z32 diode germanium AA119 2aa119 diode A119
Text: A A 119 2-AA119 POINT CONTACT DIODE G erm anium point contactdiode in a subm iniature all g lass DO-7 envelope p rim a rily intended fo r use in a .m . d etec to r and ra tio d etec to r c irc u its . QUICK REFERENCE DATA Continuous re v e rse voltage VR m ax.
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2-AA119
AA119
diode aa119
AA119
aa119 diode
Germanium Diode aa119
2AA119
2-AA119
7Z32
diode germanium AA119
2aa119 diode
A119
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1N471A
Abstract: 1M200Z 1N4741A 1N4742A 1N4743A 1N4744A 1N4745A
Text: TAIWAN SEMICONDUCTOR 1 N4 7 4 1 A - 1 M 2Q0 Z Glass Passivated Junction Silicon Zener Diode b RoHS COM PLIANCE DO-41 -3 Ü - .107 2.7J Featu res 1.0 (as.Jj .oao (3 />) OIA. L o w p ro file p a c k a g e B u ilt-in s tra in re lie f G la s s p a s s iv a te d ju n c tio n
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1N4741A
-1M200Z
DO-41
STD-202.
1M200Z)
1N471A
1M200Z
1N4742A
1N4743A
1N4744A
1N4745A
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8D140
Abstract: CQL71A 9D140 CONNECTOR Ntype laser diode MCA321 7 pin potentiometer
Text: PHILIPS 41E INTERNATIONAL D m 711002b APR 0 3 D D E M lb ? T E iP H IN pHXjrO 1990 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 FEATURES DISCRETE SEMICONDUCTORS tab 2 • High power collimated beam
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711005b
CQL71A
8D140
9D140
CONNECTOR Ntype
laser diode
MCA321
7 pin potentiometer
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"WORM"
Abstract: No abstract text available
Text: P H IL IP S 41E IN T E R N A T IO N A L i> m 711002b oosm b? IPHIN T PI W APR 0 3 1990 F - t t - V z . 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 CQL71A Medium power collimator pen FEATURES OPERATIONAL HAZARD - SEMICONDUCTOR LASER DIODE
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711002b
CQL71A
"WORM"
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Semiconductor Laser International
Abstract: CURF5
Text: PH ILIP S INTERNATIONAL MI E D B 711062b 002417^ t. E P H I N 'h ilip s C o m p o n e n ts Data sheet status Preliminary specification code 9397 251 40142 date of Issue March 1990 CQL90/D Visible light emitting collimator pen FEATURES • • • • Low power
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711062b
CQL90/D
Semiconductor Laser International
CURF5
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AR177
Abstract: bipolar transistor tester IC5-IC6 power supply mje1300
Text: AR177 PROPER TESTING CAN MAXIMIZE PERFORMANCE IN POWER MOSFETs Prepared by Kim Gauen and Warren Schultz Motorola Inc. Reprinted with permission of EDN. May, 1987 issue. 1987 Cahner's Publishing. All rights reserved. M MOTOROLA Semiconductor Products Inc.
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AR177
AR177/D
AR177
bipolar transistor tester
IC5-IC6 power supply
mje1300
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FCR455
Abstract: No abstract text available
Text: SEMICONDUCTOR TECHNICAL DATA KIC9243F c 2m os d i g i t a l in t e g r a t e d c ir c u it INFRARED REMOTE CONTROL SIGNAL TRANSMISSION LSI FOR AUDIO SYSTEM AND OTHERS. The KIC9243F is infrared remote control signal transm ission LSI which is suited for remote control of audio system,
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KIC9243F
KIC9243F
102Tm)
410Tm,
fosc/12
455kHz,
FCR455
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