DOSO Search Results

S9263

Contextual Info: AMI S9260/S9261 S9263/S9264/S9265 AMERICAN MICROSYSTEMS, INC.| TOUCHCONTROL INTERFACE \ IDÉNTIHÍR' VSS — 10 — 11 — • set 3 ' ’30 — M/T — 06 ^ ~ c i. q - 0 065 DOSO *• 1 22 — 2 21 3 20 19 - 05 12 — 13 — IS - 0« 14 — 17 — 15 —

Contextual Info: N AMER PHILIPS /DISC RE TE bTE D • htjS3T31 DOSOTOD TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.

BUK445

Abstract: K445 BUK445-500A BUK445-500B
Contextual Info: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in

Contextual Info: . Power Transistors HARRIS SEMICOND SECTOR F ile N u m b e r 15.27 E7E J> H 43GE271 DOSOSÌ6] ? H H A S D46TQ1, D46TQ2 '3 3 ^ 3 High-Speed Silicon N-P-N Power Transistors D evices for S w itc h in g A p p lic a tio n s Features: • v CEO sus) 400 V and 450 V

bach up to me

Abstract: LS175 WA-LS175 WP90350
Contextual Info: A T & T HELEC I C AS » • DOSOOSb GD0DS57 1 ■ r ' T-46-07-09 WP$>0350 List 1, WA-LS175 Quad D-Tÿpe Flip-Flop with Complementary Outputs/Common Direct Clear The LS175 is a bipolar, NPN, sealed-junction, silicon integrated circuit, It is manufactured in low-power

Contextual Info: PHILIPS INTERNATIONAL 41E D • ?110S2t DOSOSht t. W P H P h ilip s S e m ic o n d u c t o r s P ro d u c t s p e c ific a tio n High voltage optocouplers SL5582W/SL5583W FEATURES • A w ide body encapsulation with a pin distance of 1 0 .1 6 m m • An external cle ara n c e of 9 .6 mm

2269H

Contextual Info: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.

128064

Abstract: LMX2330L LMX2330LTM LMX2331L LMX2332L
Contextual Info: lw bSD1122 O O flbflb? N ational 3Dfl • - , Semiconductor ADVANCE INFORMATION September 1996 LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications

CI43

Abstract: 3BL DBM LMX2330A LMX2331A LMX2332A LMX233XA
Contextual Info: LMX2330A/LMX2331A/LMX2332A N a t i o n a l S e m i c o n d u c t o r I* LMX2330A/ LM X2331A / LMX2332A PLLatinum Dual Frequency Synthesizer for RF Personal Communications 2.5 G H z/5 1 0 MHz 2.0 G H z/5 1 0 MHz 1.2 G H z/5 1 0 MHz General Description LM X2330A

tfk 136

Contextual Info: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.

RAS 0510

Abstract: machine maintenance checklist
Contextual Info: O K I Semiconductor MSC23440A-XXBS10/DS10 4,194,304-Word x 40-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23440A-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs 4M x 4 in SOJ packages

Contextual Info: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power

hp5385a

Abstract: DCS-1800 LMX2335L LMX2336L OPERATING INSTRUCTIONS NATIONAL SEMICONDUCTOR LMX2336L EVALUATION BOARD LMX2336L LMX2335LTMX
Contextual Info: t ß GOfibfifi? bl4 National ADVANCE INFORMATION September1996 Semiconductor LMX2335L/LMX2336L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications LMX2335L LMX2336L 1.1 GHz/1.1 GHz 2.0 GHz/1.1 GHz General Description The LMX2335L and LMX2336L are monolithic, integrated

8x83104

Abstract: 8x8 vcp taser circuit T79 SMD SiS chipset 486 hep 154 8x8 inc FL221 8x831 Asg smd
Contextual Info: 8x8« Inc* 8x83104 VCP DATAS ME ET 8X 8 V C P Single Chip Video Codec and Multimedia Communications Processor FEATURES * H.261 Codec OVERVIEW The. 8x8 VCP js a single-chip programmable video codec, and multimedia communications processor. The VCP requires only memory and interface cir­

Contextual Info: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges

Contextual Info: TOSHIBA INTELLIGENT GTR MODULE MIG75Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.

OQ45

Abstract: D018 D019 D032
Contextual Info: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which

HW-130

Abstract: Programmer HW-130 03F8 HW130 HW-130 Programmer
Contextual Info: Using the HW-130 Programmer If you have had difficulty installing your HW-130 Programmer, Xilinx Technical Support recommends this troubleshooting process. First, before first connecting the HW-130 to the COM port of your PC or after disconnecting it from the port , check to ensure that it

LD113

Contextual Info: Advance Data Sheet October 1998 microelectronics group Lucent Technologies Bell Labs Innovations Ambassador T8100A, T8102, and T8105 H.100/H.110 Interfaces and Time-Slot Interchangers 1 Product Overview • Two independently programmable groups of up to

GE DIODE

Abstract: C769
Contextual Info: International [ragRectifier PD-9.961 B IRGKI050U06 "C H O P P E R " IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch o3 •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"

cal e6c

Abstract: IC free bu 2508 af equivalent cx 2601 SF.C 2805 EC norma installation tester xe 2sa 5200 power amp EM3870 relay TRK 1703 YE EI- 33C
Contextual Info: M6SMD0S3 D2 > JUNE 1979 E XO Rdisk I I/I11 Operating S y s t e m User's Guide The i n format ion in this document has been careful ly checked; and is believed to be entirely reliable. No res^tonsibi1ity> however, is assumed for inaccuracies. Furthermore,

Contextual Info: HFA3524, HFA3524A S em iconductor January 1999 Data Sheet File Number 4062.7 Features 2.5GHz/600MHz Dual Frequency Synthesizer • 2 .7 V to 5.5 V O pe ra tion T he H arris 2.4 G H z PR IS M chip set is a highly in te gra te d six-ch ip solutio n for RF m odem s em p lo ying D irect

MT16C

Contextual Info: ». ADVANCE M IC R O N I MT16D T 464 4 MEG X 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process • Single +5V ±10% power supply