HW-130
Abstract: Programmer HW-130 03F8 HW130 HW-130 Programmer
Text: Using the HW-130 Programmer If you have had difficulty installing your HW-130 Programmer, Xilinx Technical Support recommends this troubleshooting process. First, before first connecting the HW-130 to the COM port of your PC or after disconnecting it from the port , check to ensure that it
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HW-130
Programmer HW-130
03F8
HW130
HW-130 Programmer
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S9263
Abstract: No abstract text available
Text: AMI S9260/S9261 S9263/S9264/S9265 AMERICAN MICROSYSTEMS, INC.| TOUCHCONTROL INTERFACE \ IDÉNTIHÍR' VSS — 10 — 11 — • set 3 ' ’30 — M/T — 06 ^ ~ c i. q - 0 065 DOSO *• 1 22 — 2 21 3 20 19 - 05 12 — 13 — IS - 0« 14 — 17 — 15 —
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S9260/S9261
S9263/S9264/S9265
S9260/S9261
01cause
S9263
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Untitled
Abstract: No abstract text available
Text: N AMER PHILIPS /DISC RE TE bTE D • htjS3T31 DOSOTOD TSfl H A P X Philips Semiconductors Product Specification Insulated Gate Bipolar Transistor IGBT GENERAL DESCRIPTION Fast-switching N-channel insulated gate bipolar power transistor in a plastic envelope.
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htjS3T31
O220AB
BUK854-800A
bbS3831
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BUK445
Abstract: K445 BUK445-500A BUK445-500B
Text: N AMER PHILIPS/DISCRETE 2SE D • ^53=131 DOSOmO =1 ■ PowerMOS transistor BUK445-500A BUK445-500B T -2 1 -0 1 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic full-pack envelope. The device is intended for use in
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BUK445-500A
BUK445-500B
BUK445
-500A
-500B
K445
BUK445-500B
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Untitled
Abstract: No abstract text available
Text: . Power Transistors HARRIS SEMICOND SECTOR F ile N u m b e r 15.27 E7E J> H 43GE271 DOSOSÌ6] ? H H A S D46TQ1, D46TQ2 '3 3 ^ 3 High-Speed Silicon N-P-N Power Transistors D evices for S w itc h in g A p p lic a tio n s Features: • v CEO sus) 400 V and 450 V
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43GE271
D46TQ1,
D46TQ2
D46TQ1
D46TQ2
-218AC
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bach up to me
Abstract: LS175 WA-LS175 WP90350
Text: A T & T HELEC I C AS » • DOSOOSb GD0DS57 1 ■ r ' T-46-07-09 WP$>0350 List 1, WA-LS175 Quad D-Tÿpe Flip-Flop with Complementary Outputs/Common Direct Clear The LS175 is a bipolar, NPN, sealed-junction, silicon integrated circuit, It is manufactured in low-power
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005002b
T-46-07-09
WA-LS175
LS175
16-pin
0050G2b
bach up to me
WA-LS175
WP90350
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Untitled
Abstract: No abstract text available
Text: PHILIPS INTERNATIONAL 41E D • ?110S2t DOSOSht t. W P H P h ilip s S e m ic o n d u c t o r s P ro d u c t s p e c ific a tio n High voltage optocouplers SL5582W/SL5583W FEATURES • A w ide body encapsulation with a pin distance of 1 0 .1 6 m m • An external cle ara n c e of 9 .6 mm
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110S2t
SL5582W/SL5583W
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2269H
Abstract: No abstract text available
Text: TOSHIBA THMY7216C1EG-80H TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216C1EG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6408FT DRAMs and an unbuffer on a printed circuit board.
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THMY7216C1EG-80H
216-WORD
72-BIT
THMY7216C1EG
TC59S6408FT
72-bit
THMY7216C1EG)
2269H
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128064
Abstract: LMX2330L LMX2330LTM LMX2331L LMX2332L
Text: lw bSD1122 O O flbflb? N ational 3Dfl • - , Semiconductor ADVANCE INFORMATION September 1996 LMX2330L/LMX2331L/LMX2332L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications
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b501122
LMX2330L/LMX2331L/LMX2332L
LMX2330L
GHz/510
LMX2331L
LMX2332L
LMX233xL
128064
LMX2330LTM
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CI43
Abstract: 3BL DBM LMX2330A LMX2331A LMX2332A LMX233XA
Text: LMX2330A/LMX2331A/LMX2332A N a t i o n a l S e m i c o n d u c t o r I* LMX2330A/ LM X2331A / LMX2332A PLLatinum Dual Frequency Synthesizer for RF Personal Communications 2.5 G H z/5 1 0 MHz 2.0 G H z/5 1 0 MHz 1.2 G H z/5 1 0 MHz General Description LM X2330A
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LMX2330A/
X2331A/
LMX2332A
LMX2330A
LMX2331A
LMX2332A
GHz/510
LMX233xA
CI43
3BL DBM
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tfk 136
Abstract: No abstract text available
Text: TOSHIBA THMY6416C1BEG-80L TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY6416C1BEG is a 16,777,216-word by 64-bit synchronous dynamic RAM module consisting of 16 TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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THMY6416C1BEG-80L
216-WORD
64-BIT
THMY6416C1BEG
TC59S6408BFT
64-bit
THMY6416C1BEG)
tfk 136
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RAS 0510
Abstract: machine maintenance checklist
Text: O K I Semiconductor MSC23440A-XXBS10/DS10 4,194,304-Word x 40-Bit DRAM MODULE : FAST PAGE MODE TYPE DESCRIPTION The OKI MSC23440A-xxBS10/DS10 is a fully decoded 4,194,304-word x 40-bit CMOS Dynamic Random Access Memory Module composed of ten 16-Mb DRAMs 4M x 4 in SOJ packages
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MSC23440A-XXBS10/PS10
304-Word
40-Bit
MSC23440A-xxBS10/DS10
16-Mb
72-pin
RAS 0510
machine maintenance checklist
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Untitled
Abstract: No abstract text available
Text: O K I Semiconductor MSM5116160A_ 1,048,576-Word x 16-Bit DYNAMIC RAM : FAST PAGE MODE TYPE D ESCRIPTIO N The MSM5116160A is a 1,048,576-word x 16-bit dynam ic RAM fabricated in OKI's CMOS silicon gate technology. The MSM5116160A achieves high integration, high-speed operation, and low-power
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MSM5116160A_
576-Word
16-Bit
MSM5116160A
42-pin
50/44-pin
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hp5385a
Abstract: DCS-1800 LMX2335L LMX2336L OPERATING INSTRUCTIONS NATIONAL SEMICONDUCTOR LMX2336L EVALUATION BOARD LMX2336L LMX2335LTMX
Text: t ß GOfibfifi? bl4 National ADVANCE INFORMATION September1996 Semiconductor LMX2335L/LMX2336L PLLatinum Low Power Dual Frequency Synthesizer for RF Personal Communications LMX2335L LMX2336L 1.1 GHz/1.1 GHz 2.0 GHz/1.1 GHz General Description The LMX2335L and LMX2336L are monolithic, integrated
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LMX2335L/LMX2336L
LMX2335L
LMX2336L
LMX2336L
LMX2335L/36L
LMX2335L/0)
hp5385a
DCS-1800
OPERATING INSTRUCTIONS NATIONAL SEMICONDUCTOR LMX2336L EVALUATION BOARD LMX2336L
LMX2335LTMX
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AD768
Abstract: No abstract text available
Text: ANALOG DEVICES 16-Bit, 30 MSPS D/A Converter AD768 FEATURES 30 MSPS Update Rate 16-Bit Resolution Linearity: 1/2 LSB DNL @ 14 Bits 1 LSB INL @ 14 Bits Fast Settling: 25 ns Full-Scale Settling to 0.025% SFDR @ 1 MHz Output: 86 dBc THD @ 1 MHz Output: 71 dBc
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16-Bit,
AD768
16-Bit
AD768
C1941a-5-6/96
28-Pin
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Untitled
Abstract: No abstract text available
Text: w t GEC P LESS EY S I M I C O N I I I O K S P1480 LAN CAM 1KX64-BIT CMOS CONTENT-ADDRESSABLE MEMORY (SUPERSEDES SEPTEMBER 1993 EDITIO N The P1480 LAN CAM is a 1K X 64-bit fixed-width CMOS Content-addressable Memory (CAM) aimed at address filtering applications in Local-area Network (LAN) bridges
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P1480
1KX64-BIT
P1480
64-bit
37bflS22
37b6S22
28-LEAD
52-LEAD
37bfiS22
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Untitled
Abstract: No abstract text available
Text: TOSHIBA INTELLIGENT GTR MODULE MIG75Q201H PRELIMINARY High Power Switching Applications Motor Control Applications • Integrates Inverter, Brake Power Circuits & Control Circuits IGBT drive units, Protection units for Over-Current, UnderVoltage & Over-Temperature in One Package.
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MIG75Q201H
210ns
GND00
0020b43
PW05770796
IG75Q201H
0020fc
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OQ45
Abstract: D018 D019 D032
Text: TOSHIBA THMY7216D0CEG-75,-80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 16,777,216-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY7216D0CEG is a 16,777,216-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59S6404CFT DRAMs and PLL/Registers on a printed circuit board.
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Y7216D0CEG-75
216-WORD
72-BIT
THMY7216D0CEG
TC59S6404CFT
168-pin
PC133
PC100
OQ45
D018
D019
D032
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THM65V8015ATG-4f-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,608-WORD BY 64-BIT DYNAMIC RAM MODULE DESCRIPTION The THM65V8015ATG is a 8,388,608-word by 64-bit dynamic RAM module consisting of eight TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM65V8015ATG-4f-5
608-WORD
64-BIT
THM65V8015ATG
TC5165805AFT
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LD113
Abstract: No abstract text available
Text: Advance Data Sheet October 1998 microelectronics group Lucent Technologies Bell Labs Innovations Ambassador T8100A, T8102, and T8105 H.100/H.110 Interfaces and Time-Slot Interchangers 1 Product Overview • Two independently programmable groups of up to
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T8100A,
T8102,
T8105
100/H
208-pin,
DS98-387NTNB
005002b
LD113
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GE DIODE
Abstract: C769
Text: International [ragRectifier PD-9.961 B IRGKI050U06 "C H O P P E R " IGBT INT-A-PAK Ultra-fast Speed IGBT Low Side Switch o3 •Rugged Design •Simple gate-drive •Ultra-fast operation up to 25KHz hard switching, or 100KHz resonant •Switching-Loss Rating includes all "tail"
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25KHz
100KHz
IRGKI050U06
C-769
4AS5452
C-770
4S5S452
GE DIODE
C769
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cal e6c
Abstract: IC free bu 2508 af equivalent cx 2601 SF.C 2805 EC norma installation tester xe 2sa 5200 power amp EM3870 relay TRK 1703 YE EI- 33C
Text: M6SMD0S3 D2 > JUNE 1979 E XO Rdisk I I/I11 Operating S y s t e m User's Guide The i n format ion in this document has been careful ly checked; and is believed to be entirely reliable. No res^tonsibi1ity> however, is assumed for inaccuracies. Furthermore,
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I/I11
12MNU?
RQK77
cal e6c
IC free
bu 2508 af equivalent
cx 2601
SF.C 2805 EC
norma installation tester xe
2sa 5200 power amp
EM3870
relay TRK 1703
YE EI- 33C
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Untitled
Abstract: No abstract text available
Text: HFA3524, HFA3524A S em iconductor January 1999 Data Sheet File Number 4062.7 Features 2.5GHz/600MHz Dual Frequency Synthesizer • 2 .7 V to 5.5 V O pe ra tion T he H arris 2.4 G H z PR IS M chip set is a highly in te gra te d six-ch ip solutio n for RF m odem s em p lo ying D irect
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HFA3524,
HFA3524A
5GHz/600MHz
3524/H
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MT16C
Abstract: No abstract text available
Text: ». ADVANCE M IC R O N I MT16D T 464 4 MEG X 64 DRAM MODULE 4 MEG X 64 DRAM 5.0V FAST PAGE MODE FEATURES • Industry-standard pinout in a 168-pin, dual read-out, single in-line package • High-performance CMOS silicon-gate process • Single +5V ±10% power supply
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MT16D
168-pin,
200mW
048-cycle
MT10O
MT16C
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