DOUBLE HIGH-SPEED SWITCHING DIODE Search Results

smd diode a6

Abstract: smd diode marking a6 DIODE A6 marking A6 A CLIPPER CIRCUIT APPLICATIONS 1SS304 smd transistor A6 A6 DIODE SMD a6 Transistor
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS304 Features Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.

DIODE smd marking A4

Abstract: smd diode A4 smd transistor a4 A CLIPPER CIRCUIT APPLICATIONS 1SS303 marking a4 a4 marking A4 marking diode a4 smd transistor smd A4
Contextual Info: Diodes SMD Type HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE 1SS303 Features Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper. Double diode configuration assures economical use.

bav74 Date Code

Abstract: BAV74 DIODE package sot23 smd marking A1 sot23 marking code JTp SMD MARKING CODE jtp smd code marking LP smd diode BAV74 jtp sot23
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BAV74 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAV74 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns

Contextual Info: DISCRETE SEMICONDUCTORS DAT dbook, halfpage M3D088 PMBD7100 High-speed double diode Product data sheet 2003 Nov 07 NXP Semiconductors Product data sheet High-speed double diode PMBD7100 PINNING FEATURES • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 4 ns

NEC IR

Abstract: 1SS303 NEC IR application note
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS303 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON ANODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 2.5 pF TYP. High speed switching: trr = 4.0 ns MAX. Wide applications including switching, limitter, clipper.

NEC 2101

Abstract: 1SS304 marking A6
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS304 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODE : COMMON CATHODE FEATURES PACKAGE DIMENSIONS Unit: mm Low capacitance: Ct = 1.1 pF TYP. High speed switching: trr = 3.0 ns MAX. Wide applications including switching, limitter, clipper.

IS2837

Abstract: 1S2837
Contextual Info: 1 S 28 37,1S 2838 High Speed Sw itching Silicon Epitaxial Double Diodes : Com m on Cathode • Low capacitance: Ct =1.1pF TYP. • High speed switching: t r r =3.0ns M AX. • Wide applications including switching, lim itter, clipper. • Double diode configuration assures economical use.

smd diode marking code L51

Abstract: sot143 marking code JTp code l51 MAM059 BAS56 Double high-speed switching diode 134 B "360 SMD"
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D070 BAS56 High-speed double diode Product specification Philips Semiconductors Product specification High-speed double diode BAS56 FEATURES DESCRIPTION • Small plastic SMD package The BAS56 consists of two highspeed switching diodes fabricated in

KUSB50QN

Abstract: QFN-10 1579P kusb
Contextual Info: SEMICONDUCTOR KUSB50QN TECHNICAL DATA HIGH-SPEED USB2.0 DPDT SWITCH HIGH-SPEED 480Mbps USB2.0 DPDT SWITCH F DESCRIPTION E The KUSB50QN is a High-Speed(480Mbps) USB2.0 signal switch. Configured as a double-pole double-throw (DPDT) switch, it is optimized for switching between 2 Hi-Speed sources or a Hi-Speed(480Mbps) and

Contextual Info: SEMICONDUCTOR KUSB50QN TECHNICAL DATA HIGH-SPEED USB2.0 DPDT SWITCH HIGH-SPEED 480Mbps USB2.0 DPDT SWITCH F DESCRIPTION E The KUSB50QN is a High-Speed(480Mbps) USB2.0 signal switch. Configured as a double-pole double-throw (DPDT) switch, it is optimized for switching between 2 Hi-Speed sources or a Hi-Speed(480Mbps) and

1SS123-A

Abstract: NEC IR 1SS123 A CLIPPER CIRCUIT APPLICATIONS
Contextual Info: DATA SHEET SILICON SWITCHING DIODE 1SS123 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : SERIES CONNECTED MINI MOLD FEATURES PACKAGE DIMENSIONS • Low capacitance: Ct = 4 .0 pF M A X . in millimeters • High speed switching: t rr = 9 .0 ns M A X .

BAW56LT1

Contextual Info: BAW56LT1 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.

BAW56

Contextual Info: BAW56 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.

BAW56LT1

Contextual Info: BAW56LT1 HIGH-SPEED DOUBLE DIODE High-speed switching in thick and thin-film circuits Features • Small plastic SMD package. • High switching speed:max.4ns. • Continuous reverse voltage:max.75V • Repetitive peak reverse voltage:max.85V • Repetitive peak forward current:max.450mA.

1S2835

Abstract: 1S2836
Contextual Info: 1S2835,1S2836 High Speed Switching Slicon Epitaxial Double Diodes : Common Anode PACKAGE DIMENSIONS in m illim eters inches ¿.3 o j • Wide applications including switching, lim itter, clipper. ( 0 096) tO 02) • Low capacitance: C, = 2.5pF TYP. • High speed switching: t rr = 4.0ns MAX.

AB marking code smd diode

Abstract: high voltage diode high voltage diodes marking CODE R SMD DIODE smd diode marking code BAW101
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET M3D071 BAW101 High voltage double diode Product specification 2003 May 13 Philips Semiconductors Product specification High voltage double diode BAW101 FEATURES PINNING • Small plastic SMD package PIN DESCRIPTION • High switching speed: max. 50 ns

GENERAL SEMICONDUCTOR MARKING UJ

Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE (COMMON ANODE) DESCRIPTION Mitsubishi MC2836 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING «m m type double diode,especially designed for high speed switching application.

MC2858

Abstract: SC-75A JEITASC-75A
Contextual Info: 〈SMALL-SIGNAL DIODE〉 MC2858 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON CATHODE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ MC2858 is a super mini package plastic seal type silicon epitaxial type double diode,especially designed for high speed switching

MC2838

Contextual Info: MITSUBISHI SEMICONDUCTOR <SMALL-SIGNAL DIODE MC2838 FOR HIGH SPEED SWITCHING APPLICATION _ SILICON EPITAXIAL TYPE COMMON ANODE) DESCRIPTION Mitsubishi MC2838 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING Unitim m type double diode,especially designed for high speed switching application.

MC2836

Abstract: isahaya
Contextual Info: 〈SMALL-SIGNAL DIODE〉 MC2836 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON ANODE OUTLINEDRAWING Unit：ｍｍ DESCRIPTION MC2836 is a super mini package plastic seal type silicon 2.5 epitaxial type double diode,especially designed for high speed switching

MC2856

Contextual Info: 〈SMALL-SIGNAL DIODE〉 MC2856 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE COMMON ANODE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ MC2856 is a super mini package plastic seal type silicon epitaxial type double diode,especially designed for high speed switching

MC2837

Abstract: isahaya
Contextual Info: 〈SMALL-SIGNAL DIODE〉 MC2837 FOR HIGH SPEED SWITCHING APPLICATION SILICON EPITAXIAL TYPE SERIES TYPE DESCRIPTION OUTLINE DRAWING Unit：ｍｍ MC2837 is a super mini package plastic seal type silicon epitaxial type double diode,especially designed for high speed switching

marking mitsubishi

Abstract: MC2846 UJ DIODE MARKING
Contextual Info: MITSUBISHI SEMICONDUCTOR SMALL-SIGNAL DIODE MC2846 FOR HIGH SPEED SWITCHING APPLICATION _SILICON EPITAXIAL TYPE(COMMON ANODE) DESCRIPTION Mitsubishi MC2846 is a super mini package plastic seal type silicon epitaxial OUTLINE DRAWING 2.1 type double diode,especially designed for high speed switching application.

D1632

Abstract: DC1054A 1S2835A3 1S2835 1S2836 NEC DIODES 1S2836A4
Contextual Info: DATA SHEET NEC SILICON SWITCHING DIODES 1S2835,1 S2836 HIGH SPEED SWITCHING SILICON EPITAXIAL DOUBLE DIODES : COMMON ANODE MINI MOLD FEATURES PACKAGE D IM ENSIO NS @ Low capacitance: Ct = 2.5 pF TYP. in m illim e te rs High speed switching: t rr = 4.0 ns M A X .