DOUBLE SILICON NPN PHOTOTRANSISTOR Search Results

MIT-4A11B

Abstract: IR phototransistor
Contextual Info: SUBMINIATURE PHOTOINTERRUPTER MIT-4A11B Description The MIT-4A11B consists of a Gallium Arsenide infrared emitting diode and a NPN silicon phototransistor , double-layer mold plastic package. It is a transmissive subminiature photointerrupter. Package Dimensions

OIER2

Abstract: double Phototransistor
Contextual Info: OIER2 Reflective sensor _ General Description The OIER2 reflective sensor consists in a red emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids

OIER3

Abstract: reflective sensor 4 pin
Contextual Info: OIER3 Reflective sensor _ General Description The OIER3 reflective sensor consists in an infrared emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids

NTE3086

Contextual Info: NTE3086 Optoisolator Dual NPN Transistor Output Description: The NTE3086 is a standard dual optocoupler consisting of a GaAs Infrared LED and a silicon phototransistor per channel. This device is constructed with a high voltage insulation, double molded packaging process which offers 7.5KV withstand test capability.

Contextual Info:  !" Reflective sensor EEEEEEEEEEEEEEEECFCA93298C The OIER3 reflective sensor consists in an infrared emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids

Contextual Info:  !" Reflective sensor EEEEEEEEEEEEEEEECFCA93298C The OIER2 reflective sensor consists in a red emitting diode and a double NPN silicon phototransistor. The components together are mounted side by side in a plastic black SMD housing. The black package avoids

Contextual Info: Clairex Technologies, Incorporated ® CLT335 PRELIMINARY DATA NPN Silicon Phototransistor December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 package transistor base is not bonded

double Silicon NPN Phototransistor

Abstract: TO-18 TRANSISTOR glass lens phototransistor led 5mm texas transistor t05 CLE435 CLT435 NPN Silicon Phototransistor
Contextual Info: CLT435 PRELIMINARY DATA Clairex* Technologies, incorporated NPN Silicon Phototransistor December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 transistor base is not bonded

phototransistor, 850nm

Abstract: double Silicon NPN Phototransistor CLT335 TO-18Package
Contextual Info: Clairex Technologies, Incorporated CLT335 PRELIMINARY DATA NPN Silicon Phototransistor features • • • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensed TO-18 package transistor base is not bonded

Contextual Info: CLT435 PRELIMINARY DATA NPN Silicon Phototransistor Clairex® Technologies, Incorporated December, 1997 features • • absolute maximum ratings Ta=25°C unless otherwise stated. 12° acceptance angle custom aspheric lensedTO -18 package transistor base is not bonded

CLE335

Abstract: CLT335 double Silicon NPN Phototransistor phototransistor, 850nm
Contextual Info: Clairex CLT335  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)

double Silicon NPN Phototransistor

Abstract: CLE135 CLT135
Contextual Info: Clairex CLT135  Technologies, Inc. NPN Silicon Phototransistor July, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)

660nm 250mw

Abstract: CLE435 CLT435 double Silicon NPN Phototransistor
Contextual Info: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max

Clairex

Abstract: Aspheric Lens convex lens CLE335 CLT335 phototransistor, 850nm source LED 850nm LED 850nm TO-18
Contextual Info: Clairex CLT335  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) N/C BASE EMITTER 0.100 (2.54) dia 0.025 (0.64)

Contextual Info: CLT335  Clairex Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.025 (0.64)

660nm 250mw

Abstract: CLE435 CLT435
Contextual Info: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE N/C EMITTER 0.100 (2.54) dia 0.060 (1.52)

Contextual Info: CLT435 Clairex  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.190 4.83 0.176 (4.47) 0.210 (5.33) 0.190 (4.83) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.060 (1.52) max

CLE335

Abstract: CLT335
Contextual Info: Clairex CLT335  Technologies, Inc. NPN Silicon Phototransistor March, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.025 (0.64) max

Contextual Info: CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 

CLT2160

Abstract: CLT130 CLT131 CLT132 CLT133 CLT2130 CLT2140 CLT2150
Contextual Info: CLT130/CLT131/CLT132/CLT133 NPN Silicon Phototransistors Clairex  Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47)

CLE135

Abstract: CLT135
Contextual Info: Clairex CLT135/CLT135A  Technologies, Inc. NPN Silicon Phototransistors July, 2001 0.210 5.33 0.190 (4.83) 0.190 (4.83) 0.176 (4.47) 0.500 (12.7) min 0.215 (5.46) 0.205 (5.21) COLLECTOR 0.158 (4.01) 0.136 (3.45) BASE EMITTER 0.100 (2.54) dia 0.025 (0.64)

CLT2160

Abstract: CLT2140 CLT2150 CLE130 CLT130 CLT131 CLT132 CLT133 CLT2130
Contextual Info: CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors 0.210 5.33 0.190 (4.83)  Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.190 (4.83) 0.176 (4.47)

CLT2160

Abstract: CLT130 CLT131 CLT132 CLT133 CLT2130 CLT2140 CLT2150
Contextual Info: CLT130,CLT131,CLT132,CLT133 NPN Silicon Phototransistors 0.210 5.33 0.190 (4.83)  Technologies, Inc. CLT130, CLT131, CLT132 and CLT133 are exact replacements for obsolete part numbers CLT2130, CLT2140, CLT2150 and CLT2160. 0.190 (4.83) 0.176 (4.47)

double Silicon NPN Phototransistor

Abstract: phototransistor npn se2460 SD2440 SE2470 sd244
Contextual Info: SD2440 Silicon Phototransistor FEATURES • Miniature, hermetically sealed, pill style, metal can package • 48¡ acceptance angle • Wide operating temperature range - 55¡C to +125¡C • Ideal for direct mounting to printed circuit boards • Wide sensitivity ranges