DQ 2661 Search Results

DMS-250

Abstract: FPG-2000 AMADNS DMS-250 account codes DMS-300 DMS-500 FPG DMS-GSP DMS-2-50 DMS-500 13844
Contextual Info: Product/Service Brief DMS-250 SuperNode System Feature Planning Guide Year 2000 DMS-250 SUPERNODE SYSTEM FEATURE PLANNING GUIDE: 2000 COMMENTS AND SUGGESTIONS? <

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES •             400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION JUNE 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION FEBRUARY 2012 FEATURES • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

IS49NLC96400

Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory ADVANCED INFORMATION NOVEMBER 2012 FEATURES • • • • • • • • • • 533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz

issi 935

Abstract: DK QK BA1 K11 33bl IS49NLC96400
Contextual Info: IS49NLC96400,IS49NLC18320,IS49NLC36160 576Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES • • • • • • • • • • 400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock frequency) Reduced cycle time (15ns at 400MHz)

IS49NLC18160

Contextual Info: IS49NLC93200,IS49NLC18160,IS49NLC36800 288Mb x9, x18, x36 Common I/O RLDRAM 2 Memory DECEMBER 2012 FEATURES •             400MHz DDR operation (800Mb/s/pin data rate) 28.8Gb/s peak bandwidth (x36 at 400 MHz clock

Contextual Info: Preliminary Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0001 Rev.0.01 August 1, 2011 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the

Contextual Info: Datasheet PD48576209 μPD48576218 μPD48576236 R10DS0063EJ0100 Rev.1.00 September 27, 2011 576M-BIT Low Latency DRAM Common I/O Description The μPD48576209 is a 67,108,864-word by 9 bit, the μPD48576218 is a 33,554,432 word by 18 bit and the μPD48576236 is a 16,777,216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with

X91A

Contextual Info: Preliminary Datasheet PD48576209-A μPD48576218-A μPD48576236-A R10DS0063EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Common I/O Description The μPD48576209-A is a 67,108,864-word by 9 bit, the μPD48576218-A is a 33,554,432 word by 18 bit and the

Contextual Info: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0100 Rev.1.00 February 28, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with

Contextual Info: Datasheet PD48576209 μPD48576218 μPD48576236 R10DS0063EJ0200 Rev.2.00 May 10, 2012 576M-BIT Low Latency DRAM Common I/O Description The μPD48576209 is a 67,108,864-word by 9 bit, the μPD48576218 is a 33,554,432 word by 18 bit and the μPD48576236 is a 16,777,216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with

Contextual Info: Datasheet PD48576209 μPD48576218 μPD48576236 R10DS0063EJ0300 Rev.3.00 Oct 01, 2012 576M-BIT Low Latency DRAM Common I/O Description The μPD48576209 is a 67,108,864-word by 9 bit, the μPD48576218 is a 33,554,432 word by 18 bit and the μPD48576236 is a 16,777,216 word by 36 bit synchronous double data rate Low Latency RAM fabricated with

PD48288236A

Contextual Info: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0300 Rev.3.00 Oct 01, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with

PD48288236

Contextual Info: Datasheet PD48288209A μPD48288218A μPD48288236A R10DS0097EJ0200 Rev.2.00 May 10, 2012 288M-BIT Low Latency DRAM Common I/O Description The μPD48288209A is a 33,554,432-word by 9 bit, the μPD48288218A is a 16,777,216-word by 18 bit and the μPD48288236A is a 8,388,608-word by 36 bit synchronous double data rate Low Latency RAM fabricated with

IS49NLC36160A

Abstract: IS49NLC96400
Contextual Info: IS49NLC96400A, IS49NLC18320A, IS49NLC36160A 576Mb 64Mbx9, 32Mbx18, 18Mbx36 ADVANCED INFORMATION SEPTEMBER 2014  Common I/O RLDRAM 2 Memory FEATURES •          533MHz DDR operation (1.067 Gb/s/pin data rate) 38.4Gb/s peak bandwidth (x36 at 533 MHz clock

pin configuration of 7496 IC

Abstract: TMS 3617 Transistor TT 2246 ttl to mini-lvds EP2C35F672 IC 4033 pin configuration EP2C20F256 CI 4017 combinational digital lock circuit projects EP2C8F256
Contextual Info: Cyclone II Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com CII5V1-3.2 Copyright 2007 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and

TSMC 90nm flash

Abstract: ep2c2
Contextual Info: Cyclone II Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 408 544-7000 http://www.altera.com CII5V1-3.1 Copyright 2007 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and

pin configuration of 7496 IC

Abstract: tms 3617 Transistor TT 2246 4174 logic hex D type flip-flop tt 2246 data sheet ic 4017 Ic D 1708 ag BLOCK DIAGRAM DESCRIPTION of IC 4017 WITH 16 PINS EP2C20F256 EP2C35F672
Contextual Info: Cyclone II Device Handbook, Volume 1 101 Innovation Drive San Jose, CA 95134 www.altera.com CII5V1-3.3 Copyright 2008 Altera Corporation. All rights reserved. Altera, The Programmable Solutions Company, the stylized Altera logo, specific device designations, and all other words and logos that are identified as trademarks and/or service marks are, unless noted otherwise, the trademarks and

BA1 K11

Abstract: ba1d1a PD48576118FF-E24-DW1-A
Contextual Info: Preliminary Datasheet PD48576109-A μPD48576118-A R10DS0064EJ0001 Rev.0.01 Nov 08, 2010 576M- Low Latency DRAM Separate I/O Description The μPD48576109-A is a 67,108,864-word by 9 bit and the μPD48576118-A is a 33,554,432 word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

Contextual Info: Preliminary Datasheet PD48288109A μPD48288118A R10DS0098EJ0001 Rev.0.01 August 2, 2011 288M-BIT Low Latency DRAM Separate I/O Description The μPD48288109A is a 33,554,432-word by 9 bit and the μPD48288118A is a 16,777,216-word by 18 bit synchronous double data rate Low Latency RAM fabricated with advanced CMOS technology using one-transistor memory cell.

EP2C5F256

Abstract: CII51001-3 EP2C15A EP2C20 EP2C35 EP2C50 EP2C8F256 EP2C70F672 TSMC 90nm sram
Contextual Info: Section I. Cyclone II Device Family Data Sheet This section provides information for board layout designers to successfully layout their boards for Cyclone II devices. It contains the required PCB layout guidelines, device pin tables, and package specifications.