DQ05 Search Results

1N6098

Abstract: solitron devices 1N6097 solitron
Contextual Info: SOLITRON DEV IC ES INC 8368602 "flb SOLITRON DEVICES INC PE I fl3>fllaD5 DQ053b3 4 8 6 D “Ô 2 3 6 3 ~ ^ D ~ r - Ô 7 - SCHOTTKY RECTIFIERS 1N6097 1N6098 Solitron DEVICES, INC. POWER SCH OTTKY RECTIFIERS 50 AMPERES FEATURES HIGH EFFICIENCY NANOSECOND SWITCHING

darlington arrays

Contextual Info: it^ . r '^ ^ V lfiil^ iiitti'fl^ifii,i t i ^ ^ :i'lii''T f\iil'iiV jlitilll lili' j" ALLEGRO MICROSYSTEMS I N c 7 1 Í e Í 0S0433Ô DQ05?lb T • CHIPS-IN-DIP mmm 'T - q 2 -NC LGR ’■të#£§xfëi:g£&'. íS P *s s # - ,-;6 “ CVSTOM-ABRAX PROGRAM The Chips-In-DIPs program uses discrete semiconductor chips

100v mkt

Abstract: P7KE25C P7KE10 P7KE100 P7KE100C P7KE10C P7KE25 P7KE43 P7KE43C X1000
Contextual Info: niCRosErii coRP Microsemi Corp. ? r/jeij<cw? .v/i.vn -iV/i, c.4 X sí X hll5ñt.S DQ050T5 7Û7 STE D use P7K E10 thru P7K E100C ni JSf l Ul . A/ I o r m ore inform ation call- 1602} ‘MI-SIOO UNIDIRECTIONAL & BIDIRECTIONAL TRANSIENT ABSORPTION ZENER FEATU R ES

Contextual Info: niCRosErii Microsemi Corp. ? r/jeij<cw? .v/i.vn -iV/i, c.4 X STE D coRP sí hll5ñt.S X DQ050T5 use 7Û7 P7K E10 thru P7K E100C ni JSf l Ul . A/ I o r m ore inform ation call- 1602} ‘MI-SIOO UNIDIRECTIONAL & BIDIRECTIONAL TRANSIENT ABSORPTION ZENER FEATU R ES

AS8S512K3

Contextual Info: ADVANCED iPEM 64 Mb ASYNC SRAM AS8S2M32PEC 64Mb, 2Mx32 CMOS 3.3V, High Speed Static RAM Integrated Plastic Encapsulated Microcircuit FEATURES DESCRIPTION Integrated Real-Time Memory Array Solution No latency or refresh cycles Parallel Read/Write Interface

Memory

Abstract: FTS8L32512V
Contextual Info: FTS8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The FTS8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions.

Contextual Info: 1.0 I n t r o d u c t io n 1.1.3 Circular Buffers The monolithic SUMMIT provides the system designer with an intelligent solution to MIL-STD-1553 multiplexed serial data bus design problems. The SUMMIT is a single-chip device that implements all three of the defined MIL-STD-1553 functions Remote Terminal, Bus Controller, and Monitor. Operating

Contextual Info: Mobile 3rd Generation Intel Core Processor Family, Mobile Intel® Pentium® Processor Family, and Mobile Intel® Celeron® Processor Family Datasheet, Volume 1 of 2 June 2013 Document Number: 326768-006 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED,

Contextual Info: EDI8F32123C ^ E D I ELECTRONIC DESIGNS, N C .I 128Kx32 Battery Backed SRAM Module ADVANCED Features 128Kx32 bit CMOS Static Random Access Memory with on-board battery backup 128Kx32 Static RAM CMOS, High Speed Module The EDI8F32123C is a 4 megabit Battery Backed SRAM

socket am3 pinout

Abstract: socket AM2 pinout AM3 Processor Functional INTEL 80960 pipeline architecture 80960RM
Contextual Info: Intel 80960RM I/O Processor • ■ Complies with PCI Local Bus Specification, Revision 2.2 Universal 5 V and 3.3 V PCI Signalling Environment (C-stepping only) Data Sheet Product Features ■ ■ ■ ■ High Performance Intel® 80960JT Core ■ —Sustained One Instruction/Clock Execution

540L

Contextual Info: 80960RM I/O Processor • Complies with PCI Local Bus Specification, Revision 2.1 ■ 5 K PCI Signalling Environment Data Sheet Advance Information Product Features ■ High Performance 80960JT Core ■ — Sustained One Instruction/Clock Execution — 16 Kbyte, Two-Way Set-Associative

LGA 1155 Socket PIN diagram

Abstract: LGA 1155 PIN diagram LGA 1155 pin out lga1155 pin diagram E3-1275 intel LGA 1155 PIN diagram 1155 PINmap lga1155 land E3-1260L CATERR Catastrophic Error
Contextual Info: Intel Xeon® Processor E3-1200 Family Datasheet, Volume 1 This is Volume 1 of 2 June 2011 Document Number: 324970-002 INFORMATION IN THIS DOCUMENT IS PROVIDED IN CONNECTION WITH INTEL PRODUCTS. NO LICENSE, EXPRESS OR IMPLIED, BY ESTOPPEL OR OTHERWISE, TO ANY INTELLECTUAL PROPERTY RIGHTS IS GRANTED BY THIS DOCUMENT. EXCEPT AS

MO-47AE

Abstract: ADSP-21060L ADSP-21062L EDI8L32128V EDI8L32512V MPC860 TMS320LC31
Contextual Info: EDI8L32512V White Electronic Designs 512Kx32 SRAM Module.3.3V FEATURES    ADSP-21060L SHARC  ADSP-21062L (SHARC)  Texas Instruments TMS320LC31   The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and

100MHZ

Abstract: 133MHZ WED3DL644V
Contextual Info: White Electronic Designs WED3DL644V 4Mx64 SDRAM FEATURES DESCRIPTION The WED3DL644V is a 4Mx64 Synchronous DRAM configured as 4x1Mx64. The SDRAM BGA is constructed with four 4Mx16 SDRAM die mounted on a multi-layer laminate substrate and packaged in a 153 lead, 17mm by

Contextual Info: WEDPF2M64-XBX3 HI-RELIABILITY PRODUCT 2Mx64 3.3V Simultaneous Operation Multi-Chip Package FEATURES • Access Times of 100, 120, 150ns ■ Unlock Bypass Program command • Reduces overall programming time when issuing multiple program command sequences ■ Packaging

Contextual Info: SANYO SEMICONDUCTOR CORP 22E D • 7 ‘1c1 7 G7 b OODSbST LC86108A A T -4 Ÿ -/9 -0 8 C M O S LSI 3089 8-Bit Single Chip Microcomputer On-Chip LCD Controller/Driver, 8K-Byte ROM, 168-Byte RAM 3054 The LC86108A m icrocom puter is an 8-bit single chip m icrocom puter with the iq lj^ itn g onchip functional blocks:

EDI8L32512V-AC

Abstract: EDI8L32128V EDI8L32512V MO-47AE MPC860 TMS320LC31 ADSP-21060L ADSP-21062L
Contextual Info: White Electronic Designs EDI8L32512V 512Kx32 SRAM Module.3.3V FEATURES DESCRIPTION DSP Memory Solution The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC

8l32128c

Abstract: block diagram of of TMS320C4X EDI8L32512C20AI EDI8L32512C TMS320C30 TMS320C32 DSP96002 EDI8L24128C EDI8L32256C
Contextual Info: EDI8L32512C 512K x 32 CMOS High Speed Static RAM FEATURES DESCRIPTION DSP Memory Solution • Motorola DSP96002 • Analog SHARC DSP • Texas Instruments TMS320C3x, TMS320C4x Random Access Memory Array • Fast Access Times: 12*, 15, 17, and 20ns • TTL Compatible Inputs and Outputs

21DQ-20

Abstract: 417400
Contextual Info: MITSUBISHI LSIs Preliminary Spec MH4M36CXJ/CNXJ-5,-6,-7 FAST PAGE MODE 150994944 -BIT 4194304 -WORD BY 36-BIT DYNAMIC RAM PIN CONFIGURATION (TOP VIEW) [Double side] DESCRIPTION The MH4M36CXJ/CNXJ is 4194304-word x 36-bits dynamicRAM. This consists of eight industry standard 4M x 4

vco with opamp

Abstract: digital clock recovery VCO LB1125AF detector circuit using OP-AMP V15GND
Contextual Info: A T & T iiELEC I C 2SE D • 005002b 0002b00 7 ■ PHASE-LOCKED LOOP/TIMING RECOVERY LB1125AF Description T-so-17 The LB1125AF is a general-purpose phase-locked loop (PLL) designed for a variety o f applications, including synchronization, synthesis, signal reconditioning, and stereo decoding. The key elements of the device are a phase

EDI8L32512V-AC

Abstract: 8L32512V
Contextual Info: EDI8L32512V 512Kx32 SRAM MODULE, 3.3V FEATURES The EDI8L32512V is a high speed, 3.3V, 16 megabit SRAM. The device is available with access times of 12, 15, 17 and 20ns allowing the creation of a no wait state DSP and RISC microprocessor memory solutions. • DSP Memory Solution

M2576

Abstract: renco rl2444 2576S-15 transformer LM2576 LM2576-ADJ LM2576-ADJ*. Circuit Diagram using this IC 671 27130 N4001 diode IC 92112 LM2576T
Contextual Info: & Semiconductor LM2576/LM2576HV Series SIMPLE SWITCHER 3A Step-Down Voltage Regulator Features • 3.3V, 5V, 12V, 15V, and adjustable output versions ■ Adjustable version output voltage range, 1 .23V to 37V 57V for HV version ± 4 % max over line and load conditions

Contextual Info: EDI8L32512C ^ E D I 512KX32 SRAM Module ELECTRONIC DESIGNS, INC 512Kx32 CMOS High Speed Static RAM Features DSP Memory Solution The EDI8L32512C is a highspeed, 5V, 16 megabit SRAM. The device is available with access times of 12,15,17 and 20ns allowing the creation of a no wait state DSP memory

6t0045

Abstract: lm2676-adj 1200 uF 63V capacitor 2% LM2676-5 24V alternator regulator 20l diode zener capacitor 470 uf with ESR rating capacitors 100pf LM2676S LM2676S-ADJ
Contextual Info: National Semiconductor M ay 1998 LM2676 SIMPLE SWITCHER High Efficiency 3A Step-Down Voltage Regulator General Description Features The LM 2676 series of regulators are m onolithic integrated circuits which provide all of the active functions fo r a step-dow n buck sw itching regulator capable of driving up to