EM542323TQ-11
Abstract: TQFP 14X20
Text: EtronTech EM542323 2.5V/3.3V I/O 64K x 32 Pipelined Burst SRAM Preliminary 9/97 • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT # VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2
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EM542323
EM542323TQ-11
TQFP 14X20
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MOD32
Abstract: TMS28F033
Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY SMJS833 – NOVEMBER 1997 V DDE RP CLK QV RY/BY LBA V SSI S/5IO V DDI E WE OE WR WORD/DIS BAA/LRV 60 VSSE VSSE 6 59 VDDE DQ20 7 58 DQ11 DQ21 8 57 DQ10 DQ22 9 56 DQ9 DQ23 10 55 DQ8 DQ24 11 54 DQ7 DQ25 12 53 DQ6
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TMS28F033
4194304-BIT
SMJS833
MOD32
TMS28F033
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EM531323-5
Abstract: TWS - 315
Text: EtronTech Em531323 32K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9
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Em531323
EM531323-5
TWS - 315
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EM532323Q-6
Abstract: DQ3225
Text: EtronTech EM532323 64K x 32 Pipelined Burst SRAM • • • • • • • • • • • • NC DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 FT# VDD NC VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 NC 1 2 3 4 5 6 7 8 9
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EM532323
EM532323Q-6
DQ3225
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tk 69
Abstract: No abstract text available
Text: DQP3 DQ17 DQ18 VDDQ VSSQ DQ19 DQ20 DQ21 DQ22 VSSQ VDDQ DQ23 DQ24 VDD VDD VDD VSS DQ25 DQ26 VDDQ VSSQ DQ27 DQ28 DQ29 DQ30 VSSQ VDDQ DQ31 DQ32 DQP4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 25 26 27 28 29 30 100 Pin LQFP 20 mm x 14 mm body
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256Kx36
tk 69
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Untitled
Abstract: No abstract text available
Text: 240PIN DDR2 667 Unbuffered DIMM 1GB With 64Mx8 CL5 TS128MLQ64V6J Description Placement The TS128MLQ64V6J is a 128M x 64bits DDR2-667 Unbuffered DIMM. The TS128MLQ64V6J consists of 16pcs 64Mx8bits DDR2 SDRAMs in 60 ball FBGA packages and a 2048 bits serial EEPROM on a 240-pin
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240PIN
64Mx8
TS128MLQ64V6J
TS128MLQ64V6J
64bits
DDR2-667
16pcs
64Mx8bits
240-pin
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cd018
Abstract: No abstract text available
Text: TMS28F033 4194304-BIT SYNCHRONOUS FLASH MEMORY _ SM JS633 - NOVEMBER 1997 PAF 80-PIN PACKAGE TOP VIEW 8 X to. > i> 5 ¡r lo o Ear IS IS IS |w lo I * 0017 C D018 C DQ19 C VDDE C VSSE C OQ20 C 0Q21 C 0Q22 C DQ23 C DQ24 C DQ25 C
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JS633
TMS28F033
4194304-BIT
80-PIN
16/32-bit
cd018
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Untitled
Abstract: No abstract text available
Text: • P h ilip s S e m ico n d u cto rs ., 1^53^31 DQ24301 IbT APX P rodu ct sp e cifica tio n AUER PHILIPS/DISCRETE b?E D ^ — Schottky barrier diodes FE A T U R E S — BAS70 series Q U IC K R E F E R E N C E DATA • Low leakage current SYM BOL • Low turn-on and high breakdown
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DQ24301
BAS70
LafciS3T31
MHAS03
MRA802
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Untitled
Abstract: No abstract text available
Text: bb53T31 DQ240CH 70S « A P X N AMER PHILIPS/DISCRETE J174 TO 177 b?E D J V P-CHANNEL SILICON FIELD-EFFECT TRANSISTORS Silicon symmetrical p-channel junction FETs in a plastic TO-92 envelope and intended fo r application with analog switches, choppers, commutators etc.
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bb53T31
DQ240CH
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cq837
Abstract: No abstract text available
Text: 4J« *- »t TOSHIBA HYBRID D IG ITA L INTcGRATED CIRCUIT INTEGRATED CIRCUIT TO SHIBA THM 364080AS THM 364080ASG TECHNICAL DATA - 60. 70. 80, 10 - 60, 70, 80. 10 TENTATIVE DATA 4*194,304 W O R D S X 36 BIT D YN AM IC RA M MODULE DESCRIPTION The THM364080AS/ASG is a 4,194,304 words by 36 bits dynamic RA M module which assembled 36
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364080AS
364080ASG
THM364080AS/ASG
TC514100ASJ
364080ASG
A0-A10
THM36408QAS
THM364080AS
THM364080ASG
cq837
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TM4SN64EPN10
Abstract: TM2SN64EPN-10 TM48N64EPN TM4SN64EPN-10 TMS626812
Text: TM2SN64EPN 2097152 BY 64-BIT TM4SN64EPN 4194304 BY 64-BIT SYNCHRONOUS DYNAMIC RAM MODULES _ SYNCHRONOUS CLOCK CYCLE TIME *CK3 , {CL = 3 t ACCESS TIME CLOCK TO OUTPUT >CK2 CL = 2) *CK3 (CL = 3) *CK2 (CL = 2) • • • • • • • •
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TM2SN64EPN
64-BIT
TM4SN64EPN
SMMS696
TM2SN64EPN.
TM4SN64EPN
66-MHz
168-Pin
TM4SN64EPN10
TM2SN64EPN-10
TM48N64EPN
TM4SN64EPN-10
TMS626812
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Untitled
Abstract: No abstract text available
Text: TO SHIBA THMY644071EG-10 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 4,194,304-WORD BY 64-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY644071EG is a 4,194,304-word by 64-bit synchronous dynamic RAM module consisting of four TC59S6416FT DRAMs and an unbuffer on a printed circuit board.
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THMY644071EG-10
304-WORD
64-BIT
THMY644071EG
TC59S6416FT
THMY644071
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Untitled
Abstract: No abstract text available
Text: TM4EP72BPB, TM4EP72BJB, 4194304 BY 72-BIT TM4EP72CPB, TM4EP72CJB 4194304 BY 72-BIT EXTENDED-DATA-OUT BUFFERED DYNAMIC RAM MODULES _ _ • • • • Long Refresh Periods: - TM4EP72CxB: 64 ms 4096 Cycles
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TM4EP72BPB,
TM4EP72BJB,
72-BIT
TM4EP72CPB,
TM4EP72CJB
SMMS886-AUGUST
TM4EP72BxB
32M-byte,
168-pin,
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TC5117405
Abstract: No abstract text available
Text: TOSHIBA THM328025BS/BS&60/70 PRELIMINARY 8,388,608 WORDS X 32 BIT EDO DYNAMIC RAM MODULE Description The THM328025BS/BSG is a 8,388,608 words by 32 bits Hyper Page Mode (EDO) dynamic RAM module which assembled 16 pcs of TC5117405BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM328025BS/BS
THM328025BS/BSG
TC5117405BSJ
704mW
THMxxxxxx-60)
074mW
THMxxxxxx-70)
DM32020695
M328025BS/BSG
THM328025BS/BSG-6Q/70
TC5117405
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44460D
Abstract: BK36C-80
Text: TM124MBK36C, TM124MBK36S1048576 BY 36-BIT TM248NBK36C, TM248NBK36S 2097152 BY 36-BIT DYNAMIC RAM MODULE SMMS138B - MARCH 1992 - REVISED JUNE 199S Enhanced Page Mode Operation With CAS-Before-RAS CBR , RAS-Only, and Hidden Refresh Presence Detect Performance Ranges:
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TM124MBK36C,
TM124MBK36S1048576
36-BIT
TM248NBK36C,
TM248NBK36S
SMMS138B
TM124MBK36C
TM248NBK36C
72-pln
44460D
BK36C-80
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TMP68661
Abstract: No abstract text available
Text: TOSHIBA UC/UP S4E D • c]0,ì 7 2 4 Iì G 0 5 4 G 7 5 TO SHIBA Ö24 * T 0 S 3 TM P68661 1. INTRODUCTION - r - is - 3 1 - a n The TMP68661 enhanced program m able communications interface (EPCI) is a universal synchoronous/asynchronous data communications controller chip th at is an
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G054G75
P68661
TMP68661
TMP68000
16-bit
54BSC
24BSC
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BC6MA
Abstract: thm3640f0 thm3640 Toshiba D58 THM3640F0BS/BSG-60A70
Text: TOSHIBA THM3640F0BS/BSGW70 PRELIMINARY 4,194,304 WORDS X 36 BIT DYNAMIC RAM MODULE Description The THM3640F0BS/BSG is a 4,194,304 words by 36 bits dynamic RAM module which assembled 8 pcs of TC5117400BSJ and 1 pc of TC5117440BSJ on the printed circuit board. This module is optimized for application to the systems which are
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THM3640F0BS/BSGW70
THM3640F0BS/BSG
TC5117400BSJ
TC5117440BSJ
198mW
THMxxxxxx-60)
489mW
THMxxxxxx-70)
DM16030894
M3640F0BS/BSG
BC6MA
thm3640f0
thm3640
Toshiba D58
THM3640F0BS/BSG-60A70
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Untitled
Abstract: No abstract text available
Text: TM124MBK36B, TM124MBK36R1 048 576 BY 36-BIT DYNAMIC RAM MODULE TM248NBK36B, TM248NBK36R 2 097152 BY 36-BIT DYNAMIC RAM MODULE S M M S 1 3 7 D - J A N U A R Y 1 9 9 1 - R E V IS E D J A N U A R Y 1993 * * * * * * * * * * Organization TM124MBK36B . . . 1 048 576 x 36
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TM124MBK36B,
TM124MBK36R1
36-BIT
TM248NBK36B,
TM248NBK36R
TM124MBK36B
TM248NBK36B
72-pin
TM124MBK36B-Utilizes
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v801
Abstract: tc5165165
Text: T O SH IB A THM72V8015ATG-4,-5 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM72V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM72V8015ATG-4
72-BIT
THM72V8015ATG
608-word
TC5165805AFT
v801
tc5165165
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K557
Abstract: TC511000Aj THM361020S-80 THM361020S thm361020
Text: W\ Ut -IKUWH'i1!'11-iJHii - - - : — THM361020S-80, 10 THM361020SG-80, 10 1,048,576 W O R D S X 36 BIT D Y N A M IC RAM M O DULE DESCRIPTION The THM36102CS is a 1,048,576 words by 36 bits dynamic RAM module which assembled 8 pcs of TC514400J and 4 pcs of TC511000AJ on the printed circuit board. The THM361020S can be as well
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THM361020S-80,
THM361020SG-80,
THM36102CS
TC514400J
TC511000AJ
THM361020S
K557
THM361020S-80
thm361020
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Untitled
Abstract: No abstract text available
Text: THM73V8015ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388,6O8-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V8015ATG is a 8,388,608-word by 72-bit dynamic RAM module consisting of nine TC5165805AFT DRAMs on a printed circuit board. This module is optimized for applications which
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72-BIT
THM73V8015ATG-4
THM73V8015ATG
608-word
TC5165805AFT
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TC514256
Abstract: No abstract text available
Text: 524,288 W O RD S x 40 BIT D Y N A M IC RAM M O D U LE DESCRIPTION The THM405120ASG/BSG is a 524,288 words by 40 bits dynamic RAM m odule which assem bled 20 pcs o f TC514256AJ/BJ on the printed circuit board. The THM405120ASG/BSG is optim ized for application to the system s which are required high density
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THM405120ASG/BSG
TC514256AJ/BJ
110ns
130ns
150ns
100ns
180ns
B-285
THM405120BSG-60
TC514256
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TCK-1000
Abstract: D038 toshiba M7
Text: TO SH IBA THM Y6480F1 BEG-80 TEN TA TIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 8,388, 6 O8-W O RD B Y 64-BIT SYN CH R O N O U S DRAM M ODULE D ESCRIPTIO N The THMY6480F1BEG is a 8,388,608-word by 64-bit synchronous dynamic RAM module consisting of eight TC59S6408BFT DRAMs and an unbuffer on a printed circuit board.
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Y6480F1
BEG-80
64-BIT
THMY6480F1BEG
608-word
TC59S6408BFT
64-bit
THMY6480F1
TCK-1000
D038
toshiba M7
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tc516
Abstract: No abstract text available
Text: THM73V1615ATG-4,-5 T O SH IB A TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 16,777,216-WORD BY 72-BIT DYNAMIC RAM MODULE DESCRIPTION The THM73V1615ATG is a 16,777,216-word by 72-bit dynamic RAM module consisting of 18 TC5165405AFT DRAMs on a printed circuit board. This module is optimized for applications which
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THM73V1615ATG-4
216-WORD
72-BIT
THM73V1615ATG
TC5165405AFT
tc516
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