DS 2433 IC Search Results

UFNF430

Abstract: diode ed 2437 UFNF432
Contextual Info: POWER MOSFET TRANSISTORS U F N F 4 3 0 U F N F 4 3 1 500 Volt, 1.5 Ohm N-Channel U F N F 4 3 2 U F N F 4 3 3 DESCRIPTION The Unitrode power MOSFET design utilizes the most advanced technology available. This efficient design achieves a very low Rostom and a high transconductance.

Contextual Info: 10 leIENQTE m m MATERIAL / iT W Y HOUSING : Tit' PA • UL9UV-0 POLYAMIDE .NATURAL(WHITE) .GLASS FILLED .UL9UV-0 F(PPS) • + fi7 < M ) . n=? A aVS. UL9UV-0 ACTUATOR POLYPHENYLENE SULFIDE,NATURAL(BROWN),GLASS FILLED UL9LV-0 $+ L 'JytMHO.2) TERMINAL PHOSPHOR BR0NZE(t=0.2)

FX003QZ

Abstract: M83T oa 1160 FX003QC FX003QE ZVEI Tone decoder FX-003-QZ
Contextual Info: ~ r-i5 -2 1 -0 5 P R E L IM IN A R Y IN F O R M A T IO N 1 2 3 4 5 6 P U B L IC A T IO N D /2 2 4 PIN FUNCTIONS 23kHz clock out 9 03 O s e .o u t 10 Q2 O s e .in 11 Q1 Vss 1 2 Oo HOLD 13 V d d Po wer up reset 14 S i g n a l 7 8 Data 15 16 •k change *Connected

MRF163

Abstract: Motorola AN211
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF163 The RF MOSFET Line 25 W N-CHANNEL ENHANCEMENT-MODE RF POWER FIELD-EFFECT TRANSISTOR 2 .0 -4 0 0 M H z N-CHANNEL MOS BROADBAND RF POWER designed for w ideband large-signal output and driver applica tions in the 2 0 to 4 00 MHz range

d1835

Abstract: RA11b RA5B Toshiba RA8B D018 D019 D032 D051 RA1A
Contextual Info: TOSHIBA THMY1GE0SC70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SC is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804CFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: S-2939GR/I C M O S 4 K - b i t serial E 2P R O M E as y in te r fa c e w ith s e ria l port W ith m e m o r y pro te c tio n , C S a c tiv e "L ” The S-2939GR/I is a high speed, low power 4K-bit E 2PROM that uses the CM O S floating-gate process. The organization is 256-word x 16-bit, and it is read or

z16c35

Contextual Info: < £ 2 iL Œ 3 P r o d u c t S p e c if ic a t io n Z16C35/Z85C35 CMOS ISCC INTEGRATED SERIAL COMMUNICATIONS CONTROLLER FEATURES • Two G eneral-Purpose SCC Channels, Four DMA Channel; and a Universal Bus Interface Unit. ■ Software Com patible to the Zilog CMOS SCC

Contextual Info: H A R R I SS E M I C O N DS E C T O R 37E D H M3D2271 0 325522 t >*HAS Technical u a t a _ J_ _ CD54/74AC273 CD54/74A C T273 - " F ^ U -D X l Octal D Flip-Flop with Reset Type Features:

RA5B

Abstract: D018 D019 D032 D051 THMY1GE2SB70
Contextual Info: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 18 TC59SM824BFT DRAMs Top , 18 TC59SM804BFT DRAMs (Bottom) and PLL/Registers on a printed

30h80

Contextual Info: TO SH IBA THMY1GE2SB70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE2SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: TOSHIBA THMY51E2SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E2SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.

Contextual Info: Dual 8-Bit Buffered Multiplying CMOS D/A Converter PM-7528 ANALOG DEVICES □ FEATURES • • • • • • • • • • • • • O RDER IN G INFO R M ATIO N ' On-Chip Latches For Both DACs +5V To +1SV Single Supply Operation DACs Matched To 1% Four-Quadrant Multiplication

RA11b

Abstract: RA5B D018 D019 D032 ra2b ra8b
Contextual Info: TOSHIBA THMY51E0SA70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.

d9da

Abstract: 8a92 29C82 "Huffman coding" INTEL 8209 LA 7576 29c821 441I
Contextual Info: Tem ic 29C82* MATRA MHS JPEG Decoder Description The 29C82 performs decompression of still pictures in accordance with the ISO JPEG 8 R6 standard for basic systems pixels coded in 8 bits, sequential display, HUFFMAN coding, etc . The 29C82 independently executes most following of the adaptive discrete

ra8b

Abstract: RA-2 RA1A D018 D019 D032 D033 D051 THMY1GE0SB70 RA12A
Contextual Info: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

RA5B

Abstract: d1835 RA11b ra8b D018 D019 D032 D033 D051 THMY1GE0SB70
Contextual Info: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

RA5B

Abstract: RA11b D018 D019 D032 d1835
Contextual Info: TO SH IBA THMY51E2SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E2SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.

RA8A

Abstract: D018 D019 D032 RA11b
Contextual Info: TO SH IBA THMY51E0SA70,75,80 TENTATIVE TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT 67,108,864-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY51E0SA is a 67,108,864-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM704AFT DRAMs and PLL/Registers on a printed circuit board.

RA5B

Abstract: RA11b d044 D018 D019 D032 D033 D051 THMY1GE0SB70
Contextual Info: TOSHIBA THMY1GE0SB70,75,80 TOSHIBA HYBRID DIGITAL INTEGRATED CIRCUIT TENTATIVE 134,217,728-WORD BY 72-BIT SYNCHRONOUS DRAM MODULE DESCRIPTION The THMY1GE0SB is a 134,217,728-word by 72-bit synchronous dynamic RAM module consisting of 36 TC59SM804BFT DRAMs and PLL/Registers on a printed circuit board.

transistor p87

Abstract: transistor KL3 transistor AA P07
Contextual Info: MITSUBISHI MICROCOMPUTERS M37734M8LXXXHP SINGLE-CHIP 16-BIT CMOS MICROCOMPUTER DESCRIPTION • In te rru p ts . 19 types, 7 levels The M 37734M 8LX X X H P is a single-chip m icroco m p ute r u sing th e

Contextual Info: r a iO M O G O M V Military ì860tm 64-Bit M icro p ro cesso r • Compatible with Industry Standards — ANSI/IEEE Standard 754-1985 for Binary Floating-Point Arithmetic — 386 /j 486TM Microprocessor Data Formats and Page Table Entries ■ Parallel Architecture that Supports Up

PM-7528

Abstract: BOA 2430 pm7528fs AD7528CO PMI PM7528 ad7528l
Contextual Info: ANALO G D EV IC ES □ Dual 8-Bit Buffered Multiplying CMOS D/A Converter PM-7528 FEATURES O RDER IN G IN FOR M ATIO N ' • • • • • • • • • • • • • On-Chip Latches For Both DACs +5V To +15V Single Supply Operation DACs Matched To 1%

Contextual Info: H D 4 0 7 4 0 0 8 HMCS400 SERIES ZTAT MICROCOMPUTER Pin Arrangem ent Description T h e H D 4 0 7 4 0 0 8 is a m ass-storage ZTAT™ m icro­ com puter incorporating 8K w ords of program ­ m able ROM and 512 d igits of R A M . It is a CM O S 4-bit sin gle-ch ip H M C S 400-series m icrocom puter

STK 2028

Abstract: RTL 2832 STK 4133 II gc 7137 ad STK 5333 stk 5392 stk 5490 stk 2265 STK 5474 STK 4197
Contextual Info: Mon Feb 6 10:03:42 1995 Page 1 'MENSCH COMPUTER ROM SOFTWARE' 'IRQVCTRS.ASM-IRQ VECTOR EQUATES FOR WDC65C265&#39; 2500 A.D. 65816 Macro Assembler - Version 5.01g -Input Filename : irom2.asm Output Filename : irom2.obj