DS-07 059 Search Results

Contextual Info: IR Emitter and Detector Product Data Sheet LTR-516AB Spec No.: DS-50-93-0020 Effective Date: 07/24/2012 Revision: C LITE-ON DCC RELEASE BNS-OD-FC001/A4 LITE-ON Technology Corp. / Optoelectronics No.90,Chien 1 Road, Chung Ho, New Taipei City 23585, Taiwan, R.O.C.

Di 762

Abstract: DM 024 DH-06 DH06 DS 94V-0 DP10T dh08 DM-300 R DH-08 DH-04
Contextual Info: Series DP10 Dip Switches SPECIFICATIONS: NON-SWITCHING RATING: 100mA, 50VDC. SWITCHING RATING: 25mA, 24VDC. CONTACT RESISTANCE: 50m0 max. initial. ELECTRICAL LIFE: 2,000 operations. INSULATION RESISTANCE: 500VDC 1minute±1sec. lOOMO min. DIELECTRIC STRENGTH: 500VAC for 1minute.

74HC-HCT165

Abstract: 74LV165 74LV165PW N74LV165N
Contextual Info: INTEGRATED CIRCUITS 74LV165 8-bit parallel-in/serial-out shift register Product specification Supersedes data of 1997 May 15 IC24 Data Handbook Philips Semiconductors 1998 May 07 Philips Semiconductors Product specification 8-bit parallel-in/serial-out shift register

Contextual Info: INTEGRATED CIRCUITS 74LV165 8-bit parallel-in/serial-out shift register Product specification Supersedes data of 1997 May 15 IC24 Data Handbook Philips Semiconductors 1998 May 07 Philips Semiconductors Product specification 8-bit parallel-in/serial-out shift register

NE8004

Abstract: NE800495-4
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES NE800495-X S 212vs FREQUENCY . CLASS A OPERATION • HIGH EFFICIENCY: t ADD > 3 5 % T Y P • BROADBAND CAPABILITY • AVAILABILITY: Chip H erm etic Package . PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES •

1 Fp smd

Abstract: ds-115 SMD CRYSTAL Ceramic smd diode ED smd transistor LY resistance to soldering heat J-STD-020C eCERA eCERA crystal
Contextual Info: FP Series | Legacy NKS7 Series 7.0 x 5.0mm Miniature Quartz Crystal Ceramic SMD FP Frequency Range: • 6.0000 MHz to 56.0000 MHz Fundamental • 30.0000+ MHz to 56.0000 MHz (3rd Overtone) Temperature Range: • Operating: –20 to +70°C, -40 to +85°C

smd diode F6

Abstract: Diode smd f6 f6 diode NES 1004 NKS6NAD1 saronix 106.2500 Specification Quartz Crystals 6 Mhz smd transistor LY
Contextual Info: F6/FX Series | Legacy NES6/NKS6 Series 6.0 x 3.5mm Miniature Quartz Crystal Ceramic SMD F6 FX Frequency Range: Actual Size • 6.0000 MHz to 56.0000 MHz Fundamental • 30.0000+ MHz to 56.0000 MHz (3rd Overtone) Product Description Temperature Range: The F6 2-pad and FX 4-pad Series incorporate a

FD1793

Abstract: J-K Flip-Flop 7676 E608 c34102 fd 1793 32240C 8085 interrupt f608 FAD70 D302 PAI
Contextual Info: Advanced Micro Computers A subsidiary of A dvanced M icro D evices Am95/6120 Dual-Density Floppy Disk Controller Firmware Listing 00680153 REVISION RECORD REVISION A DESCRIPTION Initial Issue 8 /1 6 /8 0 B Manual Reprinted To Support Firmware Version 1.2

52AB

Abstract: 2SK825 FS5G 456-A5 RGI06
Contextual Info: M O S ï ï ^ # & J ^ < ,7 Y=7 - > > 7 . ? M O S Field E ffe c t P o w e r T ra n s is to r MOS FET x mm > h ff^ 'ot7 - M 0 S F E T T * > 2SK825 ¡±, N f-+ <, X -i -y -f-> D C -D C 3 11X ti * , i'f ïf é lll • mm) 7 f > 7'HiW-, 0 3 . 2 + 0.2 4.7 MAX. 15,7 MAX.

NEC Ga FET

Abstract: Nec K 872 NE325S01 AM/SSC 9500 ic data
Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE325S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION The NE325S01 is a Hetero Junction FET that utilizes the hetero junction to create high m obility electrons. Its excellent low noise and high associated gain make it suitable for DBS

AN-994

Abstract: IRLZ34N IRLZ34NL IRLZ34NS
Contextual Info: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET

AN-994

Abstract: IRLZ24N IRLZ24NL IRLZ24NS mbe regulator
Contextual Info: PD - 95584 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ24NSPbF IRLZ24NLPbF l HEXFET Power MOSFET

Contextual Info: PD - 95584 IRLZ24NSPbF IRLZ24NLPbF Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description l HEXFET Power MOSFET

IRLZ34N

Abstract: IR P 648 H AN-994 IRLZ34NL IRLZ34NS
Contextual Info: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET

001T

Abstract: AN-994 IRLZ24N IRLZ24NL IRLZ24NS
Contextual Info: PD - 95584 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ24NS l Low-profile through-hole (IRLZ24NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ24NSPbF IRLZ24NLPbF l HEXFET Power MOSFET

24v transformer

Abstract: gs 069 TO-262 Package AN-994 IRL3303 IRL3303L IRL3303S
Contextual Info: PD - 95578 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRL3303S l Low-profile through-hole (IRL3303L) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRL3303LPbF IRL3303SPbF l l HEXFET Power MOSFET

Contextual Info: PD - 95583 Logic-Level Gate Drive Advanced Process Technology l Surface Mount IRLZ34NS l Low-profile through-hole (IRLZ34NL) l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description IRLZ34NSPbF IRLZ34NLPbF HEXFET Power MOSFET

NE800495-4

Abstract: NE8004 NE800495-5 NE800495-7
Contextual Info: NE8004 SERIES C-BAND POWER GaAs MESFET FEATURES N E 800495-X S 2i>vs FR E Q U E N C Y CLASS A OPERATION HIGH EFFICIENCY: t ia d d £ 35% TYP BROADBAND CAPABILITY AVAILABILITY: C hip H e rm e tic P a c k a g e CD T3 PARTIALLY MATCHED INPUT FOR PACKAGED DEVICES

AN-994

Abstract: IRF530S IRFZ34N IRFZ34NL IRFZ34NS IRL3103L
Contextual Info: PD - 95571 Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free l l l l l l l IRFZ34NSPbF IRFZ34NLPbF HEXFET Power MOSFET D RDS(on) = 0.040Ω

IRF3710ZPBF

Abstract: irf3710z IRF3710ZSPBF auirf3710z AN-994 IRF3710ZL IRF3710ZLPBF IRF3710ZS auirf
Contextual Info: PD - 95466A IRF3710ZPbF IRF3710ZSPbF IRF3710ZLPbF Features l l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Lead-Free HEXFET Power MOSFET

Contextual Info: PD - 95573 IRFZ48VSPbF Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175°C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications l Lead-Free Description HEXFET Power MOSFET l D

Transistor D 1881

Contextual Info: DATA SHEET HETERO JUNCTION FIELD EFFECT TRANSISTOR NE425S01 C to Ku BAND SUPER LOW NOISE AMPLIFIER N-CHANNEL HJ-FET DESCRIPTION PACKAGE DIMENSIONS The NE425S01 is a Hetero Junction FET that utilizes the Unit: mm hetero junction to create high m obility electrons. Its excellent

DA1273

Abstract: DA02F DPL-04 DPL-08 DA02-F DS-07 059 213B A-1020 PUSH SWITCH DA09T
Contextual Info: DS/DSR - DP/DPL - DA SERIES DIP SWITCHES Specifications ELECTRICAL SPECIFICATIONS MATERIALS • Current/voltage rating : - non-switching : 100mA 50VDC - switching : 50mA 24VDC • Contact resistance at 100mA : 50mΩ max. at initial 100mΩ after life test

Contextual Info: PD - 95571 IRFZ34NSPbF IRFZ34NLPbF l l l l l l l Advanced Process Technology Surface Mount IRFZ34NS Low-profile through-hole (IRFZ34NL) 175°C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free HEXFET Power MOSFET D VDSS = 55V RDS(on) = 0.040Ω