DS0433 Search Results

Contextual Info: ALLEGRO MICROSYSTEMS INC bbE D • DS0433Ô 000b5E3 S31 ■ AL6R JUNCTION FIELD-EFFECT TRANSISTORS • ELECTRICAL CHARACTERISTICS at TA= + 25°C A V 1 G S o ff V Y (B R )G S S Allegro Min. @ IG Max. @ V GS Min. Max. Type Type Polarity (V) (HA) (nA) 2N4391

A9034

Contextual Info: ALLEGRO MICROSYSTEMS 8514 0 19 SPRAGUE. INC S3 » • DS0433fi 0003814 0 ■ ALGR 93D 038 14 p 'T z Y 3 - & S * S E M I C O N D S / ICS ULS-2045H AND ULN-2046A TRANSISTOR ARRAYS ULS-2045H AND ULN-2046A TRANSISTOR ARRAYS Three Isolated Transistors and One Differential Amplifier

High-Voltage Amplifiers

Contextual Info: ALLEGRO MICROSYSTEMS INC ^3 D • DS0433Ô 00D37M1 T ■ AL GR T-91-01 P R O C E S S VXA Process VXA NPN Small-Signal Transistor Process VXA is a double-diffused NPN silicon epi­ taxial planar device. It is designed for use in generalpurpose high-voltage amplifiers. It is the complement

DDA 014

Abstract: BTB 600 BR THC4062 THC-4413 THC4037 THC4058 THC4059 THC4060 THC4061 THC4121
Contextual Info: AL LE GR O M I C R O S Y S T E M S 8514019 SPRAGUE. INC 13 D • DS0433ê S E M I C O N D S / ICS G 0 0 3 5 7 2 2 ■ ALGR 93D 03572 J> BIPOLAR TRANSISTOR CHIPS PNP Transistors ‘TH ’ Device Types ELECTRICAL CHARACTERISTICS at TA = 25°C DC Current Gain

Contextual Info: L . ALLEGRO . MICROSYSTEMS INC T3 D • DS0433Ö 0DD3L. ÖS 4 ■ A L GR T-91-01 PROCESS DVA Process DVA NPN High-Voltage Transistor Process DVA is a double-diffused epitaxial planar NPN silicon device designed primarily for use in video circuits and other high-voltage, low-circuit

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-33101-1E ASSP ISO/IEC15693 Compliant FRAM Embedded High-speed RFID LSI MB89R118 • DESCRIPTION The MB89R118 is an LSI device that has built-in high-speed, large-capacity FRAM and is used for vicinity-RFID. ■ FEATURES

Contextual Info: , PROGRAMMABLE CHOPPERSTABILIZED, HALL-EFFECT SWITCH The A 3150JL T and A 3150JU A program m able sw itches provide tooth/valley recognition in large gear-tooth sensing applications. E ach sensor consists o f a single elem ent, chopper-stabilized H all-effect IC

6-BT

Contextual Info: ALLEGRO MICROSYSTEMS INC blE D m DSD433B GODblB'ì 27S • ALCR 3113, 3120, 3130, a n d 3140 " T t S - o ' S HALL-KFFFCT SWITCHES These Hall-effect switches are highly temperature stable and stressresistant sensors best utilized in applications that provide steep magnetic

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-33102-2E ASSP ISO/IEC 15693 Compliant FRAM Embedded High-speed RFID LSI FerVID familyTM MB89R119 • DESCRIPTION The MB89R119 is a vicinity type of RFID LSI device embedded with 256 bytes FRAM, which enables fast and frequent write operation.

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-33102-1E ASSP ISO/IEC 15693 Compliant FRAM Embedded High-speed RFID LSI FerVID familyTM MB89R119 • DESCRIPTION The MB89R119 is an LSI device that has built-in high-speed FRAM and is used for vicinity-RFID. ■ FEATURES

UDN6116A-1

Abstract: UDN6118A-1 UDN6118LW UDN6118A A-9643A
Contextual Info: A L L E GR O M I C R O S Y S T E M S INC 33E D 05DM33Ô Q0Q530b 2 IALGR FLUORESCENT DISPLAY DBIVERS Consisting of six or eight NPN Darlington output stages and the associated common-emitterinput stages, these drivers are designed to interface between low-level digital logic and Vacuum fluorescent

ULN8131A

Abstract: ULN8131LW W157 ha1619
Contextual Info: 27467.2’ jLafeJ* A „fcT l* f. r •*■ Y ■I* *# - ■ *v ^ r- ’ PR E C ISIO N SUPERVISORY SYSTEM S M O N ITO R Capable of monitoring four dc power lines, the ULN8131A and ULN8131LW are power-fault monitors for both under-voltage and over-voltage conditions. Two of the four inputs are designed to

Contextual Info: POWER H ALI] SENSOR/DBIVER FOR BRZJSHLESS DC MOTORS P W M /lo A D JU S T Dwg. No. PP-012 Requiring a minimum of external components, the UDN3625M and UDN3626M are monolithic ICs that provide single-chip control and direct drive solutions for many small, single-phase, unipolar brushless

Contextual Info: DUAL FULL-BRIDGE PWM MOTOR DRIVER The UDN2916B, UDN2916EB, and UDN2916LB motor drivers are designed to drive both windings of a bipolar stepper motor or bidirectionally control two dc motors. Both bridges are capable of sustaining 45 V and include internal pulse-width modulation PWM

block diagram satellite transponder

Abstract: HF RFID loop antenna design MB89R118 Transponder ID 48 ASK100 RFid reader for traffic applications MB89R119 fram rfid mode s transponders
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-33102-3Ea ASSP ISO/IEC 15693 Compliant FRAM Embedded High-speed RFID LSI FerVID familyTM MB89R119 • DESCRIPTION The MB89R119 is a vicinity type of RFID LSI device embedded with 256 bytes FRAM, which enables fast and

Fujitsu MB89R118

Abstract: sof36 iso 10373-7 loop block diagram satellite transponder MB89R118 MB89R118A-DI15 fram rfid HF RFID loop antenna design iso 10373-7 156933
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-33101-4Ea ASSP ISO/IEC 15693 Compliant FRAM Embedded High-speed RFID LSI FerVID familyTM MB89R118 • DESCRIPTION The MB89R118 is an LSI device that has built-in high-speed, large-capacity FRAM and is used for vicinity-RFID.

4192

Abstract: Fujitsu MB89R118 MB89R118 FUJITSU FRAM Transponders MB89R118A-DI15 block diagram satellite transponder HF RFID loop antenna design DSFI CRC 8
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-33101-4E ASSP ISO/IEC 15693 Compliant FRAM Embedded High-speed RFID LSI FerVID familyTM MB89R118 • DESCRIPTION The MB89R118 is an LSI device that has built-in high-speed, large-capacity FRAM and is used for vicinity-RFID.

s29gl032n90

Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Contextual Info: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,

Contextual Info: I I _ Data Sheet 27695* 5 40 PROTECTED P owerH all SENSOR LAMP/SOLENOID D RIVER — The U GQ5140K unipolar Hall effect switch is a monolithic integrated circuit designed for magnetic actuation of low-power incandescent lamps or inductive loads such as relays or solenoids.

S29JL032H70

Contextual Info: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book

Contextual Info: ADVANCE INFORMATION subject to change without notice July?, 1998 Suffix '-L T ' & '-UA* Pinning CHOPPER-STABILIZED, PRECISION HALL-EFFECT SWITCH The A3240—Hall-effect switch is an extremely temperature-stable and stress-resistant sensor especially suited for operation over extended tempera­

Contextual Info: INTERIM ISSUE Subject to Change Without Notice Septem ber 7 ,1 9 9 4 Data Sheet 26301.2 3-PHASE BRVSHLESS D C MOTOR CONTROLLER/DRIVER W ITH BACK-EMF SENSING The A8902CLBA is a three-phase brushless dc motor controller/ driver for use in 5 V or 12 V hard-disk drives. The three half-bridge

UDN5752M

Abstract: A7900 UDN5732M A1174 GP-009 GP009
Contextual Info: AL L E GRO MI C R OS Y S T E MS I NC 33E D • 050433Ô 0 Q0 S 2 1 Ô S ■ ALGR DUAL PERIPHERAL AND POWER DRIVER — TRANSIENT-PROTECTED OUTPUTS Com bining dual AND logic gates, high-current switching transistors, and transient suppression diodes in a bipolar m onolithic integrated

UGN3177

Contextual Info: HALL-EFFECT LATCHES These Hall-effect latches are temperature-stable and stressresistant sensors especially suited for electronic commutation in brushless dc motors using multipole ring magnets. Each device includes a voltage regulator, quadratic Hall voltage generator, tem­