DS091119 Search Results

GSM900

Abstract: QFN20 RF3863 RF3867 RF3867PCK-410
Contextual Info: RF3867 DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Dual-Channel Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 700MHz to 3800MHz Operation Small QFN20 5mmx5mm Package „ „

FPD1500SOT89CESR

Abstract: FPD1500SOT89 FPD1500SOT89E MIL-HDBK-263
Contextual Info: FPD1500SOT89 FPD1500SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD1500SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

marking code macom

Abstract: macom marking MAcom device marking marking macom ETC1-1T Macom marking code HEMT marking P CGA-3318
Contextual Info: CGA-3318Z CGA-3318Z Dual CATV Broadband High Linearity SiGe HBT Amplifier DUAL CATV BROADBAND HIGH LINEARITY SiGe HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-3318Z is a high performance Silicon Germanium HBT MMIC Amplifier. Designed with SiGe process technology for excellent linearity at an exceptional

FPD3000SOT89E

Abstract: FPD3000SOT89CE FPD3000SOT89 micro transistor 1203 EB3000SOT89-BC
Contextual Info: FPD3000SOT89 FPD3000SOT8 9 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT89 Product Description Features The FPD3000SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

transistor bc 647

Contextual Info: FPD750SOT89 FPD750SOT89 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package Style: SOT89 Product Description Features The FPD750SOT89 is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It features a 0.25 mx1500μm Schottky

CGA-6681Z

Contextual Info: CGA-6618Z CGA-6618Z Dual CATV 1MHz to 1000MHz High Linearity GaAs HBT Amplifier DUAL CATV 1MHz to 1000MHz HIGH LINEARITY GaAs HBT AMPLIFIER Package: ESOP-8 Product Description Features RFMD’s CGA-6681Z is a high performance GaAs HBT MMIC Amplifier. Designed

Contextual Info: RF3867 DUAL-CHANNEL, WIDE BANDWIDTH, HIGH LINEARITY LOW NOISE AMPLIFIER Dual-Channel Low Noise and High Intercept Point Adjustable Bias Current for Enhanced IP3 Single 2.5V to 6.0V Power Supply 700MHz to 3800MHz Operation Small QFN20 5mmx5mm Package ̈ ̈

0402CS

Abstract: FPD750SOT343 transistor 24 GHz
Contextual Info: FPD750SOT343 FPD750SOT34 3 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 RoHS Compliant and Pb-Free Product Description The FPD750SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm