DS100126 Search Results

RF2472G

Abstract: sot23-5 amplifier p12
Contextual Info: RF2472G RF2472G 2.4GHz Low Noise Amplifier with Enable 2.4GHz LOW NOISE AMPLIFIER WITH ENABLE Package Style: SOT 5 Lead Features       DC to >6GHz Operation 2.7V to 4.0V Single Supply High Input IP3 1.5dB Noise Figure at 2400MHz 14dB Gain at 2400MHz

Contextual Info: Preliminary Technical Information GenX3TM 1200V IGBT VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

IXGP20N120B3

Abstract: IXGP20N120B IXGA20N120B3 IXGA20N120B
Contextual Info: Preliminary Technical Information VCES = 1200V IC90 = 20A VCE sat ≤ 3.1V IXGA20N120B3 IXGP20N120B3 GenX3TM 1200V IGBT High Speed Low Vsat PT IGBTs 3-20 kHz Switching TO-263 (IXGA) Symbol Test Conditions VCES VCGR TJ = 25°C to 150°C TJ = 25°C to 150°C, RGE = 1MΩ

si 4422

Abstract: FPD1500DFN FPD750DFN FPD750SOT89 Z624 Z5 1512
Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features Optimum Technology Matching Applied „ „ „ „ GaAs HBT 24dBm Output Power P1dB at 1.85GHz

Contextual Info: FPD750DFN FPD750DFN Low Noise High Linearity Power pHEMT LOW NOISE HIGH LINEARITY POWER pHEMT NOT FOR NEW DESIGNS Package: 2mmx2mm DFN Product Description Features The FPD750DFN is a packaged depletion mode AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a