DS110622 Search Results

SEMICONDUCTOR J598

Abstract: rfha
Contextual Info: RFHA1023A Proposed 250W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

Contextual Info: RF6525 3.0V TO 4.2V, 2.4GHz FRONT END MODULE     NC 15 VCC TX Output Power: 22dBm TX Gain: 28dB RX Gain: 11.5dB RX NF: 2.5dB Integrated LNA With Bypass Mode VCC_BAIS  TXCT Features GND Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm 14 13 12 11