DS110630 Search Results

Contextual Info: RFHA1101D Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

RFHA1023

Abstract: SEMICONDUCTOR J598
Contextual Info: RFHA1023 225W GaN WIDE-BAND PULSED POWER AMPLIFIER Package: Flanged Ceramic, 2 Pin Features „ „ „ „ „ „ Wideband Operation: 1.2GHz to 1.4GHz Advanced GaN HEMT Technology Advanced Heat Sink Technology Optimized Evaluation Board Layout for 50: Operation

Contextual Info: RFXF4513 RFXF45131:1 SMT TRANSFORMER 1:1 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 1000MHz  Low Cost and RoHS Compliant  Industry Standard SMT package  Available in Tape-and-Reel  50 Characteristic Impedance  Transmission Line

Contextual Info: RFXF4513 RFXF45131:1 SMT TRANSFORMER 1:1 SMT TRANSFORMER Package: S-20 Features  Frequency Range 5MHz to 1000MHz  Low Cost and RoHS Compliant  Industry Standard SMT package  Available in Tape-and-Reel  50 Characteristic Impedance  Transmission Line

Contextual Info: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB

RF6535

Contextual Info: RF6535 3.3V, 2.4GHz FRONT END MODULE Package Style: QFN, 20-Pin, 3.5mmx3.5mmx0.5mm  Applications   ZigBee 802.15.4 Based Systems for Remote Monitoring and Control WiFi 802.11b/g VCC_BAIS VCC NC 13 12 11 TXN 16 10 VCC TXP 17 9 GND RXCT 18 8 ANT1

Contextual Info: RFHA1101 Proposed 4.3W GaN ON SiC POWER AMPLIFIER DIE-ON-CARRIER Package: Die Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB

M1DGAN202

Contextual Info: RFHA1101D 4.3W GaN ON SiC POWER AMPLIFIER DIE Features     Broadband Operation DC to 10GHz 1 Advanced GaN HEMT Technology Small Signal Gain=21.4dB at 2.14GHz 28V Typical Performance RF OUT VD RF IN VG • Output Power 4.3W at P3dB • Drain Efficiency 60% at P3dB