DS111220 Search Results

SZP-5026-HWD

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

Contextual Info: SZP-5026Z SZP-5026Z 4.9GHz to 5.9GHz 2W InGaP Amplifier 4.9GHz to 5.9GHz 2W InGaP AMPLIFIER Package: Proprietary SOF-26 Product Description Features RFMD’s SZP-5026Z is a high-linearity, single-stage, class AB Heterojunction Bipolar Transistor HBT power amplifier. It is designed with InGaP-on-GaAs device technology and fabricated with MOCVD for an ideal combination of low cost and high reliability. This product is specifically designed for use as a driver or final stage power

433mhz rx tx module

Abstract: tx rx 433Mhz rf module RF6504 RF650 tx rx 433 433mhz rf module
Contextual Info: RF65043.3V to 4.0V, 433MHz to 470MHz Transmit/Receive Front End Module RF6504 Preliminary 3.3V TO 4.0V, 433MHz TO 470MHz TRANSMIT/RECEIVE FRONT END MODULE  InterfaceRx Insertion Loss: 1dB Applications 3 GND 4 GND GND GND VReg VCC GND 20 GND 19 GND 6 17