DS59 Search Results

XQ4VSX55

Abstract: xq4vlx25 XQ4VLX60-10FF668M XQ4VLX40 XQ4VFX60 xq4vlx60 XQ4VFX60-10EF672M XQ4VLX40-10FF668M XQ4VLX100 Virtex 4Q
Contextual Info: Virtex-4Q FPGA Data Sheet: DC and Switching Characteristics R DS595 v1.6 April 27, 2010 Product Specification Virtex-4Q FPGA Electrical Characteristics Defense-grade Virtex -4Q FPGAs are available in -10 speed grade and are qualified for industrial (TJ = –40°C to +100°C),

DFM600XXM45-F000

Abstract: DS5915-1
Contextual Info: DFM600XXM45-F000 Fast Recovery Diode Module DS5915-1.0 June 2007 LN25309 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 1200A Rating

DFM400NXM33-F000

Abstract: 3300V FRD
Contextual Info: DFM400NXM33-F000 Fast Recovery Diode Module DS5910-1.0 March 2007 LN25214 FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base plate with AIN substrates • Dual Diodes Can be paralleled for 800A Rating

DFM200PXM33-F000

Abstract: basic ac motor reverse forward electrical diagram
Contextual Info: DFM200PXM33-F000 Fast Recovery Diode Module DS5908- 1.0 March 2007 LN25211 . FEATURES • Low Reverse Recovery Charge • High Switching Speed • Low Forward Voltage Drop • Isolated AlSiC Base with AlN substrates • Low FIT Rate KEY PARAMETERS VRRM VF

DRD520T14

Abstract: DRD520T
Contextual Info: DRD520T14 Rectifier Diode DS5990 – 1 March 2011 LN28176 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 1400V 520A 5900A VOLTAGE RATINGS Part and Ordering Number DRD520T14 DRD520T12 DRD520T10 DRD520T08 DRD520T06

DRD3220X14

Contextual Info: DRD3220X14 Rectifier Diode DS5994 – 1 March 2011 LN28180 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 1400V 3220A 35800A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VRRM V DRD3220X14 DRD3220X12

DIM400XCM33-F000

Contextual Info: DIM400XCM33-F000 IGBT Chopper Module DS5938-1.0 February 2009 LN26594 FEATURES Soft Punch Through Silicon Isolated MMC Base with AlN Substrates High Thermal Cycling Capability KEY PARAMETERS V CES V CE(sat) * (typ) IC (max) I C(PK) (max) 3300V 2.8 V 400A

ALSIC 145

Abstract: DFM400PXM33-F000
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module DS5909- 1.1 May 2008 LN26124 . FEATURES Low Reverse Recovery Charge High Switching Speed Low Forward Voltage Drop KEY PARAMETERS VRRM VF (typ) IF (max) IFM (max) 3300V 2.9V 400A 800A Isolated AlSiC Base with AlN substrates

DCR1260F42

Contextual Info: DCR1260F42 Phase Control Thyristor DS5966-3 August 2014 LN31840 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 4200V 1255A 16800A 1500V/µs 1000A/µs * Higher dV/dt selections available

DCR4590B28

Contextual Info: DCR4590B28 Phase Control Thyristor Preliminary Information DS5976-1.0 January 2011 LN27909 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 2800V 4950A 65000A 2000V/µs 500A/µs * Higher dV/dt selections available

DCR4880M42

Contextual Info: DCR4880M42 Phase Control Thyristor DS5943-4 April 2013 LN30252 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 4200V 4880A 60800A 2000V/µs 400A/µs * Higher dV/dt selections available APPLICATIONS

DIM200XCM65-F000

Abstract: IGBT 6500v E 13005 TRANSISTOR
Contextual Info: Preliminary information DIM200XCM65-F000 IGBT Chopper Module DS5955-1 December 2009 LN26955 FEATURES KEY PARAMETERS • 10µs Short Circuit Withstand  High Thermal Cycling Capability  Soft Punch Through Silicon VCES VCE(sat) * (typ) IC (max) IC(PK)

DCR1770F22

Abstract: DCR1110F50 DCR1110F52 DCR890F
Contextual Info: DCR1110F52 Phase Control Thyristor Preliminary Information DS5965-1 August 2010 LN27372 FEATURES KEY PARAMETERS • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt APPLICATIONS 5200V 1107A 14800A 1500V/µs 800A/µs * Higher dV/dt selections available

DIM150PSM45-F000

Contextual Info: Preliminary Information DIM150PSM45-F000 Single Switch IGBT Module DS5956.1 January 2010 LN26978 FEATURES 10µs Short Circuit Withstand High Thermal Cycling Capability Non Punch Through Silicon Isolated AlSiC Base with AlN Substrates KEY PARAMETERS VCES

DFM200XXM65-F000

Abstract: 6500V
Contextual Info: DFM200XXM65-F000 Fast Recovery Dual Diode Module DS5972-1 October 2010 LN27669 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates  Dual Diodes can be paralleled for 400A Rating

DFM400PXM33-F000

Abstract: DFM400PXM33-F
Contextual Info: DFM400PXM33-F000 Fast Recovery Diode Module Replaces DS5909-2 DS5909-3 April 2013 LN30370 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base With AlN Substrates

DRD1010F60

Contextual Info: DRD1010F60 Rectifier Diode DS5984-2 June 13 LN30615 FEATURES • Double Side Cooling  High Surge Capability KEY PARAMETERS VRRM IF(AV) IFSM APPLICATIONS  Rectification  Free-wheel Diode  DC Motor Control  Power Supplies  Welding  Battery Chargers

Contextual Info: DRD410T22 Rectifier Diode DS5997 – 1 March 2011 LN28183 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 410A 4900A VOLTAGE RATINGS Part and Ordering Number DRD410T22 DRD410T20 DRD410T18 DRD410T16 Repetitive Peak

Contextual Info: DFM1200EXM18-A000 Fast Recovery Diode Module Replaces DS5913-1.0 DS5913-2 April 2011 LN28313 FEATURES KEY PARAMETERS • VRRM VF IF IFM Low Reverse Recovery Charge  High Switching Speed  Low Forward Volt Drop  Isolated AlSiC Base with AlN Substrates

Contextual Info: DCR3990A52 Phase Control Thyristor DS5940-2 April 2013 LN30254 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VDRM IT(AV) ITSM dV/dt* dI/dt 5200V 3990A 53400A 2000V/µs 400A/µs * Higher dV/dt selections available APPLICATIONS

DRD990D

Contextual Info: DRD990D22 Rectifier Diode DS5998 – 1 March 2011 LN28184 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 2200V 990A 12500A VOLTAGE RATINGS Part and Ordering Number DRD990D22 DRD990D20 DRD990D18 DRD990D16 Repetitive Peak

Contextual Info: DRD870G40 Rectifier Diode DS5986 – 1 January 2011 LN28007 KEY PARAMETERS FEATURES • Double Side Cooling  High Surge Capability VRRM IF(AV) IFSM 4000V 870A 15000A VOLTAGE RATINGS Part and Ordering Number DRD870G40 DRD870G38 DRD870G36 DRD870G34 Repetitive Peak

DCR4500A36

Abstract: DCR4500A40 DCR4500A42 DS5942-1
Contextual Info: DCR4500A42 Phase Control Thyristor Preliminary Information DS5942-1.0 June 2009 LN 26810 KEY PARAMETERS FEATURES VDRM IT(AV) ITSM dV/dt* dI/dt Double Side Cooling High Surge Capability 4200V 4500A 60800A 2000V/µs 200A/µs * Higher dV/dt selections available

Contextual Info: DCR820N65 Phase Control Thyristor Preliminary Information DS5923-1.2 February 2008 LN 26019 KEY PARAMETERS FEATURES Double Side Cooling VDRM IT(AV) ITSM dV/dt* dI/dt High Surge Capability APPLICATIONS 6500V 820A 12000A 1500V/µs 500A/µs * Higher dV/dt selections available