DUAL CHANNEL BARRIER Search Results
DUAL CHANNEL BARRIER Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| PQU650-12P | Murata Manufacturing Co Ltd | AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P |
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| CUHS20S60 |
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H |
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| CUHS20F60 |
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Schottky Barrier Diode (SBD), 60 V, 2.0 A, US2H |
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| CUHS15S60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
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| CUHS15F60 |
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Schottky Barrier Diode (SBD), 60 V, 1.5 A, US2H |
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DUAL CHANNEL BARRIER Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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cpri
Abstract: SN65LVCP1412
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SN65LVCP1412 1200mV 20GHz 24-Terminal cpri SN65LVCP1412 | |
SN65LVCP1412Contextual Info: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up |
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SN65LVCP1412 1200mV 20GHz SN65LVCP1412 | |
K28-5
Abstract: SN65LVCP1412
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SN65LVCP1412 1200mV 20GHz 24-Terminal K28-5 SN65LVCP1412 | |
SN65LVCP1412Contextual Info: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up |
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SN65LVCP1412 1200mV 20GHz 24-Terminal SN65LVCP1412 | |
SN65LVCP1412Contextual Info: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up |
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SN65LVCP1412 1200mV 20GHz SN65LVCP1412 | |
SN65LVCP1412Contextual Info: SN65LVCP1412 www.ti.com SLLSED2 – SEPTEMBER 2012 14.2-GBPS Dual Channel, Dual Mode Linear Equalizer Check for Samples: SN65LVCP1412 FEATURES 1 • • • • • • • • • Dual Channel, Uni-Directional, Multi-Rate, Dual-Mode Linear Equalizer with Operation up |
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SN65LVCP1412 1200mV 20GHz 24-Terminal SN65LVCP1412 | |
10Gbase KR
Abstract: SN65LVCP1412
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SN65LVCP1412 1200mV 20GHz 24-Terminal 10Gbase KR SN65LVCP1412 | |
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Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 65 A, 2.6 mΩ Features Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package |
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Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package |
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Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package |
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FDMS3008SDC FDMS3008SDC | |
1351D
Abstract: FDPC8011S FDPC8011
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FDPC8011S FDPC8011S 1351D FDPC8011 | |
fdms3600Contextual Info: Dual N-Channel PowerTrench MOSFET N-Channel: 25 V, 30 A, 5.6 mΩ N-Channel: 25 V, 40 A, 1.6 mΩ Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally |
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FDMS3600S FDMS3600S fdms3600 | |
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Contextual Info: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing |
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FDMC7200S power33 | |
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Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 1.25 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package |
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ic 22cfContextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally |
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FDMS3664S FDMS3664S ic 22cf | |
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Contextual Info: PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 8 mΩ at VGS = 10 V, ID = 13 A dual PQFN package. The switch node has been internally |
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FDMS3660S
Abstract: MO-240 501B
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FDMS3660S FDMS3660S MO-240 501B | |
22CF21CD
Abstract: 11-CQ2 22cF
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FDMS3668S FDMS3668S 22CF21CD 11-CQ2 22cF | |
DTC in UDS
Abstract: MC68230 MC68440 Motorola MC68230 LSHA mc68450 74LS245 74LS373 M68000 MC68008
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OCR Scan |
MC68440 M68000 MC68440 a23/d15 a22/d14 a21/d13 a20/d12 a19/d11 a18/d10 DTC in UDS MC68230 Motorola MC68230 LSHA mc68450 74LS245 74LS373 MC68008 | |
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Contextual Info: FDMC2512SDC N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 40 A, 2.0 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package |
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FDMC2512SDC | |
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Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 25 V, 49 A, 2.9 mΩ General Description Features ̈ Dual Cool TM ̈ SyncFET Schottky Body Diode This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package |
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FDMS3620SContextual Info: FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 4.7 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally |
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FDMS3620S FDMS3620S | |
FDMS3620SContextual Info: FDMS3620S PowerTrench PowerStage 25V Asymmetric Dual N-Channel MOSFET General Description Features Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 4.7 mΩ at VGS = 10 V, ID = 17.5 A dual PQFN package. The switch node has been internally |
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FDMS3620S FDMS3620S | |
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Contextual Info: FDMS3602S PowerTrench Power Stage Asymmetric Dual N-Channel MOSFET Features General Description Q1: N-Channel This device includes two specialized N-Channel MOSFETs in a Max rDS on = 5.6 mΩ at VGS = 10 V, ID = 15 A dual PQFN package. The switch node has been internally |
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FDMS3602S FDMS3602S | |