DUAL DIODE MIXER Search Results

DBES105A

Abstract: SAS diode
Contextual Info: DBES105a Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency. This flip-chip dual diode has been designed for

marking Um diode

Abstract: W-band diode diode marking um mixer diode w-band dual diode mixer 14-077D diode d.a.t.a. book marking code um
Contextual Info: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

5082-2277

Contextual Info: 5082-2277 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2277 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications from 2.4 to 4.8 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier

5082-2830

Abstract: DIODE 809
Contextual Info: 5082-2830 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The ASI 5082-2830 is a medium Barrier Schottky Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 2.0 GHz. PACKAGE STYLE 809 FEATURES INCLUDE: • Medium Barrier

dual diode mixer

Abstract: Q62702-D1354
Contextual Info: Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking Ordering Code

Contextual Info: BAT 14-077D Silicon Dual Flip Chip Schottky Diode Preliminary data
Dual Schottky medium Barrier Mixer Diode
For W-band application up to 80GHz ESD: Electrostatic discharge sensitive device, observe handling precautions! Type Marking BAT 14-077D - Pin Configuration

DMF-3070

Contextual Info: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching

Contextual Info: 5082-2271 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2271 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 4 GHz. PACKAGE STYLE 867 FEATURES INCLUDE: • Low Barrier • Excellent Matching

DUAL DIODE

Contextual Info: 5082-2279 SCHOTTKY BARRIER DUAL DIODE DESCRIPTION: The 5082-2279 is a Low Barrier Schottky Barrier Dual Diode Designed for Single Balanced Mixer, Phase Detector and Modulator Applications up to 12 GHz. PACKAGE STYLE 825 FEATURES INCLUDE: • Low Barrier • Excellent Matching

Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.

DBES103

Abstract: DBES110 DIODE 33 25 dual diode anode-cathode SAS diode
Contextual Info: DBES103/110 Flip-Chip Dual Diode GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating frequency.

DEVICE MARKING CODE AAs

Abstract: pin configuration of s r flip flip
Contextual Info: Infineon t a c h n c !o g i e * Silicon Dual Flip Chip Schottky Diode BAT 14-077D Preliminary Data Sheet • • Dual Schottky medium Barrier Mixer Diode For W-band application up to 80 GHz ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating

DBES105A

Abstract: DIODE BP dual diode mixer DBES105a99F
Contextual Info: DBES105a RoHS COMPLIANT Flip-Chip Dual Diode GaAs Diode Description 30 30 100 diameter 20 26 The DBES105a is a dual Schottky diode based on a low cost 1µm stepper process including a bump technology. The parasitic inductances are reduced and result in a very high operating

diode marking KJ

Abstract: KJ DIODE MARKING
Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099

6-BT

Contextual Info: SIEMENS Silicon Dual Schottky Diode BAT 114-099 Features • High barrier diode for balanced mixers, phase detectors and modulators ESD: Electrostatic Discharge sensitive device, observe handling precautions! Type Marking Ordering Code taped & reel BAT 114-099

Contextual Info: Ordering number : ENA0628B SBX201C Schottky Barrier Diode http://onsemi.com Dual Series Schottky Barrier Diode for Mixer and Detector 2V, 50mA, 0.25pF, CP Features • • • • Small interterminal capacitance C=0.25pF typ Less parastic components Small forward voltage

Contextual Info: Ordering number : EN3240C 1SS351 Schottky Barrier Diode http://onsemi.com Dual Series Schottky Barrier Diode for Mixer and Detector 5V, 30mA, 0.69pF, CP Features • • • Series connection of 2 elements in a small-sized package facilitates high-density mounting and

ECG584 schottky

Abstract: diode ECG109 diode ecg 588 vat 2000 ge ECG575 Z3 DIODE ECG577 Z4 diode Diode ECG110A ECG113
Contextual Info: Diodes and R<£ctifiers General Purpose ECG Type Peak Reverse Voltage PRV Max V Description ECG109 ECG110A Gen Purp Ge Gen Purp Ge 100 40 ECG110MP Matched Diode Pair Ge 30 ECG112 UHF Mixer (Schottky) Si Common Cathode Si Dual Diode, CenterTap TV Horiz ECG114

BC237

Abstract: BC847BPDW1T1 Series BC548 low noise transistors bc638 cbc550c BC307 2N5550* surface mount BC212 BSR58LT1 NSDEMN11XV6T1
Contextual Info: Numeric Data Sheet Listing Data Sheet Function Page 1SS383T1 Dual Schottky Diode . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 51 2N3819 JFET VHF/UHF Amplifier . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 53

Contextual Info: u n ite d „ _ s e m ic o m f u c S o r s ^ C ~ « <5 D B E S10 3 /1 10 . F lip -C h ip Dual D io d e GaAs Diode Description The DBES103/110 is a dual Schottky diode family based on a low cost 1nm stepper process including a bump technology. The parasitic inductances are reduced and result in

MMBD352WT1

Contextual Info: MOTOROLA Order this document by MMBD352WT1/D SEMICONDUCTOR TECHNICAL DATA Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra–fast switching circuits.

diode cross reference

Abstract: diode hp 2800 motorola diode cross reference schottky diode cross reference led cross reference HP 2804 SCHOTTKY DIODES CROSS REFERENCE hp 2800 diode HSMS-3800 pin diode cross reference
Contextual Info: PIN and Schottky Diodes Cross Reference RF/mW Components Surface Mount PIN Diode Selection Guide SOT-23 Single Application VBR Attenuator 50 Ω 100 V HSMP-3800 D0 Attenuator 75 Ω 100 V HSMP-3810 E0 Dual Anode Dual Cathode Series Pair SOT-143 Common Common Unconnected

Contextual Info: ON Semiconductort Dual Schottky Barrier Diode MMBD352WT1 These devices are designed primarily for UHF mixer applications but are suitable also for use in detector and ultra−fast switching circuits. 3 • Very Low Capacitance — Less Than 1.0 pF @ Zero Volts