DUAL FET DRIVER Search Results

Pixel Circuit for AMOLED Displays

Abstract: CDRH4D28C-100NC amoled display ISL97702 mo-229 pad layout ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 amoled
Contextual Info: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching

Contextual Info: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching

ISL97702

Abstract: ISL97702IRZ ISL97702IRZ-T13 ISL97702IRZ-T7 ld 33v 1/Detector/"Detector IC"/"CD"/OLED display circuit
Contextual Info: ISL97702 Data Sheet October 13, 2005 FN7462.0 Boost with Dual Reference Outputs Features The ISL97702 represents a high efficiency, boost converter with integrated boost FET, boost diode and input disconnect FET. A dual feedback circuit allows simple switching

ic at 1040a

Abstract: 1kW flyback PFC 10kw pfc 24v active clamp forward converter
Contextual Info: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver

Contextual Info: SC531 Triple Low-side FET Driver with Digitally Controlled Current Limit POWER MANAGEMENT Features             Description Dual 2A Source, 4A Sink FET Drivers Second Channel Enable Independent Drive Supplies Auxiliary 2A Source, 4A Sink FET Driver

FST3253

Abstract: IDT74FST3253
Contextual Info: IDT74FST3253 DUAL 4-BIT TO 1-BIT FET MULTIPLEXER/DEMULTIPLEXER INDUSTRIAL TEMPERATURE RANGE DUAL 4-BIT TO 1-BIT FET MULTIPLEXER/ DEMULTIPLEXER IDT74FST3253 FEATURES: DESCRIPTION: − − − − The FST3253 belongs to IDT's family of Bus switches. Bus switch

KGF2236

Abstract: k2236 J0124 16PSSOP TA 8644 12943
Contextual Info: This version: Jul. 1998 Previous version: — E2Q0056-18-73 ¡ electronic components KGF2236 ¡ electronic components KGF2236 Dual Monolithic GaAs Power FET GENERAL DESCRIPTION The KGF2236, housed in a SMD-type plastic package, is a dual monolithic GaAs power FET that

Contextual Info: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 01 — 11 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,

D959

Abstract: d956 MS-013 SO20 FET E 102
Contextual Info: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,

MS-013

Abstract: SO20 transistor D607
Contextual Info: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 04 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

d933

Abstract: D932 BUK9MNN-65PKK MS-013 SO20 transistor D929
Contextual Info: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

Contextual Info: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

Contextual Info: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

ad918

Contextual Info: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

Contextual Info: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 04 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

D959 transistor

Contextual Info: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 02 — 19 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,

Contextual Info: BUK9MHH-65PNN Dual TrenchPLUS FET Logic Level FET Rev. 03 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance Architecture HPA TrenchPLUS technology,

transistor D756

Abstract: d756 D902 MS-013 SO20 TSP 200 d897 d905
Contextual Info: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

transistor D756

Abstract: transistor d830 D758 BUK9MTT-65PBB MS-013 SO20
Contextual Info: BUK9MTT-65PBB Dual TrenchPLUS FET Logic Level FET Rev. 02 — 17 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

transistor D919

Abstract: d918 D919 MS-013 SO20 D913
Contextual Info: BUK9MPP-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 03 — 15 July 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

Contextual Info: BUK9MNN-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 27 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

AD609

Abstract: ad6082
Contextual Info: BUK9MFF-65PSS Dual TrenchPLUS FET Logic Level FET Rev. 03 — 31 May 2010 Preliminary data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

Contextual Info: BUK9MJJ-65PLL Dual TrenchPLUS FET Logic Level FET Rev. 02 — 18 June 2010 Product data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring

transistor D756

Contextual Info: BUK9MRR-65PKK Dual TrenchPLUS FET Logic Level FET Rev. 01 — 28 May 2010 Objective data sheet 1. Product profile 1.1 General description Dual N-channel enhancement mode field-effect power transistor in SO20. Device is manufactured using NXP High-Performance HPA TrenchPLUS technology, featuring