DUAL GSM REPEATER Search Results

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all

RR40-41

Abstract: F0007 MB3891 MB3891PFV sim 28
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all

F0007

Abstract: MB3891 MB3891PFV
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-27801-1E ASSP For Power Management Applications Mobile Phones Power Management IC for GSM Mobile Phone MB3891 • DESCRIPTION MB3891 is intended to be used in future GSM-phones, Dual Band phones and Dual Mode phones. It contains all

GSM repeater circuit

Abstract: repeater gsm circuit GSM repeater power amplifier module dual gsm repeater repeater gsm gsm repeater LMV242
Contextual Info: April 2004 LMV242 Dual Output, Quad-Band GSM/GPRS Power Amplifier Controller General Description Features The LMV242 is a power amplifier PA controller intended for use within an RF transmit power control loop in GSM/GPRS mobile phones. The LMV242 supports all single-supply PA’s

Contextual Info: LMS6002D Multi-band Multi-standard Transceiver with Integrated Dual DACs and ADCs SUMMARY FEATURES TXINI TXINQ •  2 DEMUX TXD[11:0] 12 TX_IQ_SEL    Femtocell and Picocell base stations Repeaters Broadband wireless communication devices for WCDMA/HSPA, LTE, GSM, CDMA2000, IEEE 802.16x

NE5520379A

Abstract: NE5520379A-T1 NE5520379A-T1A VP215 ldmos nec
Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LDMOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

NE5520379A

Contextual Info: PRELIMINARY DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

Contextual Info: DATA SHEET SILICON POWER MOS FET NE5520379A 3.2 V OPERATION SILICON RF POWER LD-MOS FET FOR GSM/DCS DUAL-BAND PHONE TRANSMISSION AMPLIFIERS DESCRIPTION The NE5520379A is an N-channel silicon power MOS FET specially designed as the transmission power amplifier

Contextual Info: Dual, 16-Bit, 1600 MSPS, TxDAC+ Digital-to-Analog Converter AD9142A Data Sheet FEATURES GENERAL DESCRIPTION Supports input data rate up to 575 MHz Very small inherent latency variation: <2 DAC clock cycles Proprietary low spurious and distortion design 6-carrier GSM ACLR = 79 dBc at 200 MHz IF

D13P

Abstract: AD9142 10930-10 adl537x
Contextual Info: Dual, 16-Bit, 1600 MSPS, TxDAC+ Digital-to-Analog Converter AD9142 Data Sheet FEATURES GENERAL DESCRIPTION Very small inherent latency variation: <2 DAC clock cycles Proprietary low spurious and distortion design 6-carrier GSM ACLR = 79 dBc at 200 MHz IF SFDR > 85 dBc bandwidth = 300 MHz at ZIF

Contextual Info: Dual, 16-Bit, 1600 MSPS, TxDAC+ Digital-to-Analog Converter AD9142A Data Sheet FEATURES GENERAL DESCRIPTION Supports input data rate up to 575 MHz Very small inherent latency variation: <2 DAC clock cycles Proprietary low spurious and distortion design 6-carrier GSM ACLR = 79 dBc at 200 MHz IF

DCS Automation PDF Notes

Abstract: 0897/1747 gsm repeater vt 1202 GSM repeater circuit VC-24 VC-2R8A24-0897
Contextual Info: FUJITSU MEDIA DEVICE DATA SHEET DS04-21713-1E ASSP for Mobile Telephone VCO 800 to 2000 MHz VC-24 Series • DESCRIPTION With excellent C/N characteristics and low current consumption, this VCO series is suitable for use with GSM and DCS and is ideal to miniaturize dual-band mode products. The VC-24 series can be used in any frequency band

0897/1747

Abstract: VC-24 vco gsm
Contextual Info: FUJITSU MEDIA DEVICE DATA SHEET DS04-21713-1E ASSP for Mobile Telephone VCO 800 to 2500 MHz VC-24 Series • DESCRIPTION With excellent C/N characteristics and low current consumption, this VCO series is suitable for use with GSM and DCS and is ideal to miniaturize dual-band mode products. The VC-24 series can be used in any frequency band

dual gsm repeater

Abstract: GSM repeater circuit GSM band selective repeater Leaky Feeder gsm repeater HPFO multi-band radio frequency
Contextual Info: System Specifications Sheet SUCOceed HPFOR REPEATER TUNNEL COVERAGE SYSTEMS FOR MULTI BAND APPLICATIONS System Features Typical System Layout Its high output power, multiple carrier capability, modular design, and multi-band support make the High Power

RF Hitec

Abstract: 455KHz notch filter 30 MHz crystal notch filter Ceramic Filters Low Pass 5MHz LC Band Pass Filter band pass filter 10.7mhz RHF-1950R20 RHF-897.2R GSM RHF-935-25A IMT-2000
Contextual Info: CAVITY FILTER Cellular/ GSM IMT2000/ WLL FILTER ISO9001 Certified V. 1.8  [FEATURES] Application for Base Stations, Repeaters Low Insertion Loss High Attenuation Custom Design and Development is available GSM Cellular ❍ ❍ ❍ ❍ Model Frequency Range

lv 1083

Contextual Info: LMS6002D Multi-band Multi-standard Transceiver with Integrated Dual DACs and ADCs SUMMARY FEATURES TXINI TXINQ •  2 DEMUX TXD[11:0] TX_IQ_SEL 12 APPLICATIONS    Femtocell and Picocell base stations Repeaters Broadband wireless communication devices for

dual gsm repeater

Abstract: gsm repeater GSM repeater circuit SKY65330 Base Station subsystem DCS1800 EGSM900 PCS1900
Contextual Info: PRODUCT SUMMARY SKY65330: Tx/Rx Front-End Module with Integrated Coupler for Quad-Band GSM and EDGE Applications Applications • Quad-band femto base stations and cellular repeaters for GSM850, EGSM900, DCS1800, and PCS1900 bands Features • High efficiency

PF08103B

Abstract: GSM repeater circuit GSM 900 mhz repeater circuit DCS1800 E-GSM900 GSM900 PF08103B equivalent
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

BLO1RN1A

Abstract: dual gsm repeater DCS1800 PF08107BP
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

GSM repeater circuit

Abstract: PF08109B dual gsm repeater DCS1800 pf08109
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

PF08114B

Abstract: dual gsm repeater pf08114 GSM repeater DCS1800 GSM900 GSM repeater circuit BLO1RN1-A62-001 GSM 900 mhz repeater circuit
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

Contextual Info: i FUJITSU SEMICONDUCTOR 11 = DATA SHEET . D S 0 4 -2 3 1 1 3 -1 E ASSP Mobile Communication Systems • DESCRIPTION The S2 type of SAW bandpass filters are named “Soft SAW” because of their performance.

dual gsm repeater

Abstract: HMCAD1512
Contextual Info: Analog Devices Welcomes Hittite Microwave Corporation NO CONTENT ON THE ATTACHED DOCUMENT HAS CHANGED www.analog.com www.hittite.com THIS PAGE INTENTIONALLY LEFT BLANK A Selection of Hittite Components for Cellular Infrastructure Analog, Digital & Mixed-Signal ICs, Modules, Subsystems & Instrumentation