DUAL INFRARED DIODE Search Results

Infrared Phototransistor

Abstract: TPOWER
Contextual Info: Optoisolator Specifications 4N38, 4N38A Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor The 4N38 and 4N38A consist of a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual-in-line package. These

Contextual Info: European “Pro Electron” Registered Types CNY33 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor T he CXY33 is a gallium arsenide, infrared em itting diode coupled with silicon high voltage phototransistors in a dual

11d2

Contextual Info: Optolsolator Specifications H11D1-H11D4 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon High Voltage Phototransistor The H11D1-H11D4 are gallium arsenide, infrared emitting diodes coupled with silicon high voltage phototransistors in a dual in-line package. These devices are also available in

Contextual Info: O p toisolator S pecification s 4N35, 4N36, 4N37 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T he 4N 35,4N 36,4N 37 are gallium arsenide infrared em itting diodes coupled with a silicon phototransistor in a dual in-line package.

Contextual Info: Optoisolator Specifications H11A1, H11A2, H11A3, H11A4, H11A5 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e HI 1A1 through H11A5 consist o f a gallium arsenide infrared emitting diode coupled with a silicon phototransistor in a dual in-line

Contextual Info: Optoisolator Specifications H11B255 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Photo-Darlington Amplifier The H ] IB255 consists o f a gallium arsenide infrared em itting diode coupled with a silicon photo-Darlington amplifier in a dual in-line package. This device is also

Contextual Info: TIL197, TIL198, TIL199, TIL197A, TILI98A, TILI199A TIL197B, TIL198B, TIL199B SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS 8003023 03437. MAY 199C * Gallium-Arsenide Diode Infrared Source

mct6

Abstract: mct6 optocoupler MCT62
Contextual Info: MCT6/ MCT62 TELEFUNKEN Semiconductors Dual Channel Optocoupler with Phototransistor Output Description The MCT6 and MCT62 consist of a phototransistor optically coupled to a gallium arsenide infrared emitting diode in a 6 lead plastic dual inline packages.

23 TFK 001

Contextual Info: MCT6H/ MCT62H Vishay Semiconductors Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package.

H11C2-H11C3

Abstract: Opto-isolator 50V-RGK
Contextual Info: Optoisofator Spécifications H11C1, H11C2, H11C3 Optoisolator GaAs Infrared Emitting Diode and Light Activated SCR T he HI 1C1, HI 1C2 and H11C3 are gallium arsenide, infrared em itting diodes coupled with light activated silicon controlled rectifiers in a dual in-line package. T hese devices are also

VBRC

Contextual Info: European “Pro Electron” Registered Types CNY51 Optoisolator G aAs Infrared Emitting Diode and NPN Silicon Phototransistor aT he CNY51 consists of a gallium arsenide, infrared emitting diode coupled with a silicon phototransistor in a dual in-line package. This device is also available in surface-m ount

Contextual Info: TIL917, TIL917A, TIL917B, TIL917C, TIL918, TIL918A TIL918B, TIL918C, TIL919, TIL919A, TIL919B, TIL919C SINGLE/DUAL/QUAD CHANNEL OPTOCOUPLERS/OPTOISOLATORS SOOS030 - FEBRUARY 1992 • Gallium-Arsenide Diode Infrared Source

MOCD207

Abstract: two transistor forward
Contextual Info: MOCD207 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD207 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.

MOCD217

Contextual Info: MOCD217 HIGH DENSITY MOUNTING DUAL CHANNEL OPTICALLY COUPLED ISOLATOR Dimensions in mm DESCRIPTION The MOCD217 optically coupled isolator consists of an two infrared light emitting diodes and two NPN silicon photo transistors in a space efficient dual in line plastic package.

Contextual Info: Optoisolator Specifications SL5504 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5504 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5504 com plies with UTE requirem ents as per UTE C96-551 ADD2.

be 303

Contextual Info: Optoisolator Specifications SL5511 Optoisolator GaAs Infrared Emitting Diode and NPN Silicon Phototransistor T h e SL5511 consists o f a gallium arsenide, infrared em itting diode coupled with a silicon phototransistor in a dual in-line package. T h e SL5511 com plies with UTE requirem ents as per UTE C96-551 ADD2.

MCT62

Abstract: MCT-6 MCT6
Contextual Info: MCT6/MCT62 Dual Channel Optocoupler with Phototransistor Output Description The MCT6 and MCT62 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

MCT6 equivalent

Abstract: MCT62 MCT6
Contextual Info: MCT6/MCT62 Dual Channel Optocoupler with Phototransistor Output Description The MCT6 and MCT62 consists of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using a

3 tfk 206

Abstract: tfk Phototransistor TFK 201 DIN 50014 STANDARD Vishay Telefunken tfk transistor MCT62H tfk order
Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

MCT62H

Abstract: E-76222 Vishay Telefunken tfk
Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

Contextual Info: MCT6H/ MCT62H Vishay Telefunken Dual Channel Optocoupler with Phototransistor Output Description The MCT6H and MCT62H consist of a phototransistor optically coupled to a gallium arsenide infrared-emitting diode in a 6-lead plastic dual inline package. The elements are mounted on one leadframe using

ge mct2

Abstract: IC MCT2E IC 1 MCT2E MCT26 GE solid state
Contextual Info: E SOLI» STATE 01 Optoelectronic Specifications DE^3â75Gfll DDlTfl?1! 1 T -W l-S 3 Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual- -S^ ^ G

IS-953

Abstract: GEPS2001
Contextual Info: E SOLI» STATE 01 Optoelectronic Specifications DE § 3 0 7 5 0 0 1 DOnflSfl 0 T ^ J -S3 K' Photon Coupled Isolator GEPS2001 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor The GE Solid State GEPS2001 is a gallium arsenide, infrared emit­ ting diode coupled with a silicon phototransistor in a dual-in-line

ic mct2e

Abstract: IC 1 MCT2E MCT2E characteristics ge mct2 mct2e MCT2 MCT2 GE solid state MCT26
Contextual Info: G E SOLID STATE 01 DE Optoelectronic Specifications T 3a75afli o n n a ? M t 1~" I- Photon Coupled Isolator MCT2, MCT2E, MCT26 GaAs Infrared Em itting Diode & NPN Silicon Photo-Transistor The GE Solid State MCT2, MCT2E and MCT26 are gallium arsenide, infrared emitting diodes coupled with a silicon phototransistor in a dual­