DUAL MATCHED PNP Search Results

Contextual Info: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

2N3810DCSM

Abstract: LE17 dual matched PNP
Contextual Info: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810DCSM • Matched Dual Transistor. • Dual Ceramic Hermetic Package • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810 • Matched Dual Transistor. • Hermetic Metal TO78 Package. • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

Contextual Info: SILICON DUAL MATCHED PNP TRANSISTORS 2N3810 • Matched Dual Transistor. • Hermetic Metal TO78 Package. • Suitable For High Gain, Low Noise, Differential Amplifier, Applications. • Screening Options Available ABSOLUTE MAXIMUM RATINGS TA = 25°C unless otherwise stated

NST30010MXV6T1G

Abstract: pnp matched pair
Contextual Info: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

Contextual Info: NST30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

marking code 4f, package sot-363

Abstract: NST45011MW6T1G NST45010MW6T1G
Contextual Info: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

Contextual Info: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

marking code 4f, package sot-363

Abstract: Q245
Contextual Info: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

Contextual Info: NST45010MW6T1G Dual Matched General Purpose Transistor PNP Matched Pair These transistors are housed in an ultra−small SOT−363 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

Contextual Info: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

pnp matched pair

Abstract: NSVT30010MXV6T1G NST30010MXV
Contextual Info: NST30010MXV6T1G, NSVT30010MXV6T1G Dual Matched General Purpose Transistor PNP Matched Pair http://onsemi.com These transistors are housed in an ultra−small SOT563 package ideally suited for portable products. They are assembled to create a pair of devices highly matched in all parameters, eliminating the need

ESCC 5207-005

Abstract: SOC3810 MARKING SMD PNP TRANSISTOR R SOC3810HRB 2N3810 2N3810HR LCC6 bipolar junction transistor LCC-6 marking code SMD ic
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■

SOC3810HRB

Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V - 0.05 A Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics ■

SOC3810HRB

Abstract: transistor st 431 SOC38 ESCC SOC3810 2N3810
Contextual Info: 2N3810HR Hi-Rel PNP dual matched bipolar transistor 60 V, 0.05 A Datasheet — production data Features BVCEO 60 V IC max 0.05 A HFE at 10 V - 150 mA > 150 Operating temperature range -65°C to +200°C • Hi-Rel PNP dual matched bipolar transistor ■ Linear gain characteristics

Contextual Info: ANALOG DEVICES Low Noise, Matched Dual PNP Transistor MAT03 FEATURES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 n V /\ Hz @ 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain Matching: 3% max Excellent Logarithmic Conformance: rBE — 0.3 i l typ

MAT03

Abstract: MAT03AH2 MAT03 op MAT03A MAT03E MAT03EH MAT03F MAT03FH
Contextual Info: ► A N ALO G D E V IC E S Low Noise, Matched Dual PNP Transistor MAT03 FEA T U R ES Dual Matched PNP Transistor Low Offset Voltage: 100 jiV max Low Noise: 1 nV/VHz <§> 1 kHz max High Gain: 100 min High Gain Bandwidth: 190 MHz typ Tight Gain M atching: 3% max

IC free

Contextual Info: Central CMLT5087EM SURFACE MOUNT DUAL, MATCHED PNP SILICON TRANSISTORS TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR CMLT5087EM consists of two individual, isolated 5087E PNP silicon transistors with matched VBE ON characteristics. This device is designed for applications requiring high

Contextual Info: MD3251AHX, HXV DUAL MD3251AFHXV (DUAL) MHQ3251AHX, HXV (QUAD) M03251AHXV (QUAD) CRYSTAtONCS 2805 Veterans Highway Suite 14 Ronkonkoma, N.Y. 11779 PNP Silicon Dual/Quad Small-Signal Transistors designed for general-purpose amplifier applications. Matched devices for DC current

NSV40300

Abstract: P40300 free transistor and ic equivalent data NSS40300MD
Contextual Info: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low

NSS40300MD

Abstract: NSS40300MDR2G
Contextual Info: NSS40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low

NSS40300MD

Contextual Info: NSS40300MDR2G, NSV40300MDR2G Dual Matched 40 V, 6.0 A, Low VCE sat PNP Transistor These transistors are part of the ON Semiconductor e2PowerEdge family of Low VCE(sat) transistors. They are assembled to create a pair of devices highly matched in all parameters, including ultra low

Contextual Info: DMDT9922 PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR ADVANCE INFORMATION Features • · · · Epitaxial Planar Die Construction Low Noise High Current Gain Matched Pair of Transistors SOT-363 A C2 · · · E1 KXX Mechanical Data · · B1 Case: SOT-363, Molded Plastic

IC 555

Abstract: datasheet of ic 555 datasheet ic 555 555 ic ic 555 datasheet TRANSISTOR 1P DMDT9922
Contextual Info: DMDT9922 PNP DUAL, MATCHED PAIR SURFACE MOUNT TRANSISTOR ADVANCE INFORMATION Features • · · · Epitaxial Planar Die Construction Low Noise High Current Gain Matched Pair of Transistors SOT-363 A C2 · · · E1 KXX Mechanical Data · · B1 Case: SOT-363, Molded Plastic