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    DUAL MOSFET MARKING EA Search Results

    DUAL MOSFET MARKING EA Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    DS0026H/883 Rochester Electronics LLC DS0026 - CLOCK DRIVER, MOS - Dual marked (7800802GA) Visit Rochester Electronics LLC Buy
    ICL7667MTV/883B Rochester Electronics LLC ICL7667 - DRIVER, MOSFET, DUAL POWER - Dual marked (5962-8766001GC) Visit Rochester Electronics LLC Buy
    MG800FXF1JMS3 Toshiba Electronic Devices & Storage Corporation N-ch SiC MOSFET Module, 3300 V, 800 A, iXPLV, High-side: SiC SBD、Low-side: SiC MOSFET Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation
    TK7R0E08QM Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 80 V, 64 A, 0.0070 Ohm@10V, TO-220AB Visit Toshiba Electronic Devices & Storage Corporation

    DUAL MOSFET MARKING EA Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    Mosfet

    Abstract: SSF2129H3
    Text: SSF2129H3 20V Dual P-Channel MOSFET Main Product Characteristics VDSS -20V RDS on 21mΩ (typ.) ID -6.0A D1 S1 Features and Benefits     G2 G1 SOP-8   D2 Marking and Pin S2 Schematic Diagram Assignment Advanced MOSFET process technology Special designed for PWM, load switching and


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    PDF SSF2129H3 Mosfet SSF2129H3

    NCP81061

    Abstract: NCP6151
    Text: NCP81061 VR12 Compatible Synchronous Buck Dual MOSFET Driver http://onsemi.com MARKING DIAGRAM 1 QFN16 CASE 485AW Features • • Typical Applications • Power Management solutions for Desktop and Server Systems 81061 A L Y W G = Specific Device Code = Assembly Location


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    PDF NCP81061 QFN16 485AW NCP6151 NCP81061/D NCP81061

    SUF3001

    Abstract: No abstract text available
    Text: SUF3001 Semiconductor Dual P-channel Trench MOSFET Portable Equipment Application. Notebook Application. Features • Low VGS th : VGS(th)=1.0~3.0V • Small footprint due to small package • Low RDS (ON) : RDS (ON) =66mΩ Ordering Information Type NO. Marking


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    PDF SUF3001 KSD-T7F004-000 SUF3001

    f 0472 N-Channel MOSFET

    Abstract: si5980
    Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1


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    PDF Si5980DU 2002/95/EC Si5980DU-T1-GE3 18-Jul-08 f 0472 N-Channel MOSFET si5980

    Untitled

    Abstract: No abstract text available
    Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 CE 3 XXX Lot Traceability and Date Code D1 8 4 S2 D1


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    PDF Si5980DU 2002/95/EC Si5980DUelectronic 2002/95/EC. 2002/95/EC 2011/65/EU. JS709A 02-Oct-12

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14543 Revision. 2 Product Standards MOS FET FC694309ER FC694309ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 1.5 V drive  Halogen-free / RoHS compliant


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    PDF TT4-EA-14543 FC694309ER UL-94 FK330309

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14570 Revision. 2 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant


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    PDF TT4-EA-14570 FC694308ER UL-94 FK330308

    Untitled

    Abstract: No abstract text available
    Text: Doc No. TT4-EA-14570 Revision. 1 Product Standards MOS FET FC694308ER FC694308ER Dual N-channel MOSFET Unit : mm For switching circuits 1.6 0.2 • Features 0.13 6 5 4 1 2 3  Marking Symbol : 1.2 1.6  Low drive voltage : 2.5 V drive  Halogen-free / RoHS compliant


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    PDF TT4-EA-14570 FC694308ER UL-94 FK330308

    Untitled

    Abstract: No abstract text available
    Text: Si5980DU Vishay Siliconix Dual N-Channel 100-V D-S MOSFET FEATURES PRODUCT SUMMARY VDS (V) RDS(on) (Ω) ID (A) Qg (Typ.) 100 0.567 at VGS = 10 V 2.5 2.2 nC PowerPAK ChipFET Dual 1 Marking Code 2 S1 G1 8 CE 3 D1 7 Part # Code G2 D2 6 Lot Traceability and Date Code


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    PDF Si5980DU 2002/95/EC Si5980DUllectual 18-Jul-08

    CON2 2pin connector

    Abstract: SIP 9 JP1 CON4 CRCW0805 Si4730EY Si6862DQ SiDB766760 SUM60N08-07C A26228-ND 2 pin connector sip2
    Text: SiDB766760 Vishay Siliconix Current-Sense MOSFET Evaluation Board FEATURES D Facilitates Evaluation of Vishay Siliconix Current Sensing Power MOSFETs Available in Three Different Packages D Jumper Isolation to Select The Device Under Test D Simple Two Resistor External Circuit for Each Variety


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    PDF SiDB766760 SUM60N08-07C, Si4730EY Si6862DQ 23-Oct-03 CON2 2pin connector SIP 9 JP1 CON4 CRCW0805 SUM60N08-07C A26228-ND 2 pin connector sip2

    Untitled

    Abstract: No abstract text available
    Text: FDMC7200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 22 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing


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    PDF FDMC7200S power33

    FDMC8200S

    Abstract: Power33 byr10-100
    Text: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing


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    PDF FDMC8200S power33 FDMC8200S byr10-100

    Untitled

    Abstract: No abstract text available
    Text: FDMC8200S Dual N-Channel PowerTrench MOSFET 30 V, 10 mΩ, 20 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a due power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing


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    PDF FDMC8200S power33

    lm5111

    Abstract: No abstract text available
    Text: LM5111 www.ti.com SNVS300G – JULY 2004 – REVISED MARCH 2013 LM5111 Dual 5A Compound Gate Driver Check for Samples: LM5111 FEATURES DESCRIPTION • The LM5111 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver


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    PDF LM5111 SNVS300G LM5111 ns/12 LM5111-4

    LSP3113

    Abstract: No abstract text available
    Text: Liteon Semiconductor Corporation LSP3113 Dual Channel 1.5 MHZ, 800mA Synchronous Step-Down Converter GENERAL DESCRIPTION FEATURES High Efficiency : Up to 95% 1.5MHz Constant Frequency Operation 800mA Output Current per each channel Very Low Quiescent Current of 400µA


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    PDF LSP3113 800mA 3-10L LSP3113

    LSP3113

    Abstract: TDFN-10
    Text: Liteon Semiconductor Corporation LSP3113 Dual Channel 1.5 MHZ, 800mA Synchronous Step-Down Converter GENERAL DESCRIPTION FEATURES High Efficiency : Up to 95% 1.5MHz Constant Frequency Operation 800mA Output Current per each channel Very Low Quiescent Current of 400µA


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    PDF LSP3113 800mA 3-10L LSP3113 TDFN-10

    Untitled

    Abstract: No abstract text available
    Text: Liteon Semiconductor Corporation LSP3113 Dual Channel 1.5 MHZ, 800mA Synchronous Step-Down Converter „ „ FEATURES z z z z z z z z z z z z High Efficiency : Up to 95% 1.5MHz Constant Frequency Operation 800mA Output Current per each channel Very Low Quiescent Current of 400µA


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    PDF LSP3113 800mA 3-10L LSP3113 20REF 55REF 50BSC

    Untitled

    Abstract: No abstract text available
    Text: FDMC7200S Dual N-Channel PowerTrench MOSFETs 30 V, 22 mΩ, 10 mΩ Features General Description Q1: N-Channel Q2: N-Channel This device includes two specialized N-Channel MOSFETs in a dual power33 3mm X 3mm MLP package. The switch node has been internally connected to enable easy placement and routing


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    PDF FDMC7200S power33

    sg3524 PWM dc to dc boost regulator

    Abstract: apple ccfl inverter dc 12v sg3524 PWM GENERATOR with mosfet switching regulator 12v 3A 1.5A 48v regulator ultra low power mosfet fast switching sg3524 battery charger SG3524 application notes speed control 400V voltage regulator 6V sot-223 smt voltage regulators
    Text: SURFACE MOUNT PRODUCTS Introduction Linear Technology Corporation LTC was founded in 1981 to address the growing demand for high performance and superior quality linear integrated circuits. Today, LTC has successfully established a leadership position by introducing and supplying leading edge products in each of the industry’s basic functional groups —


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    PDF LT1203 LT1204 LT1205 150MHz, 75MHz LT1106C LT1312C LT1313C LTC1314C sg3524 PWM dc to dc boost regulator apple ccfl inverter dc 12v sg3524 PWM GENERATOR with mosfet switching regulator 12v 3A 1.5A 48v regulator ultra low power mosfet fast switching sg3524 battery charger SG3524 application notes speed control 400V voltage regulator 6V sot-223 smt voltage regulators

    Untitled

    Abstract: No abstract text available
    Text: SM72482 www.ti.com SNVS696C – JANUARY 2011 – REVISED APRIL 2013 Dual 5A Compound Gate Driver Check for Samples: SM72482 FEATURES DESCRIPTION • • The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver


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    PDF SM72482 SNVS696C SM72482

    MOSFET Drivers pin compatible with

    Abstract: renewable energy hybrid systems q2 marking soic-8
    Text: SM72482 SolarMagic Dual 5A Compound Gate Driver General Description The SM72482 Dual Gate Driver replaces industry standard gate drivers with improved peak output current and efficiency. Each “compound” output driver stage includes MOS and bipolar transistors operating in parallel that together sink more


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    PDF SM72482 MOSFET Drivers pin compatible with renewable energy hybrid systems q2 marking soic-8

    vdr1

    Abstract: 1N4148 MP8042 MP8042DF 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM
    Text: MP8042 24V, 5A Dual Channel Power Half-Bridge The Future of Analog IC Technology FEATURES DESCRIPTION The MP8042 is a configurable full-bridge or dual channel half-bridge that can be configured as the output stage of a Class-D audio amplifier. Each channel can be driven independently as


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    PDF MP8042 MP8042 20-pin vdr1 1N4148 MP8042DF 12v 40W AUDIO AMPLIFIER CIRCUIT DIAGRAM

    Untitled

    Abstract: No abstract text available
    Text: MP8046 28V, 5A Dual Channel Power Half-Bridge The Future of Analog IC Technology FEATURES DESCRIPTION The MP8046 is a configurable full-bridge or dual channel half-bridge that can be configured as the output stage of a Class-D audio amplifier. Each channel can be driven independently as


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    PDF MP8046 MP8046 20-pin

    regulator 5a 5v

    Abstract: No abstract text available
    Text: MP8042 24V, 5A Dual Channel Power Half-Bridge The Future of Analog IC Technology FEATURES DESCRIPTION The MP8042 is a configurable full-bridge or dual channel half-bridge that can be configured as the output stage of a Class-D audio amplifier. Each channel can be driven independently as


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    PDF MP8042 600kHz MP8042 regulator 5a 5v