DUAL N-CHANNEL POWERTRENCH MOSFET Search Results

DUAL N-CHANNEL POWERTRENCH MOSFET Result Highlights (5)

Part	Manufacturer	Description
PQU650-12P	Murata Manufacturing Co Ltd	AC/DC 650W, 6”X4” U-CHANNEL, 12V O/P
TK5R1A08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 70 A, 0.0051 Ohm@10V, TO-220SIS
TK155E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.155 Ω@10V, TO-220, DTMOSⅥ
TK3R3E08QM	Toshiba Electronic Devices & Storage Corporation	MOSFET, N-ch, 80 V, 120 A, 0.0033 Ohm@10V, TO-220AB
TK110E65Z	Toshiba Electronic Devices & Storage Corporation	N-ch MOSFET, 650 V, 0.11 Ω@10V, TO-220, DTMOSⅥ

DUAL N-CHANNEL POWERTRENCH MOSFET Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
FDMS7650DC Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package	Original	FDMS7650DC FDMS7650DC	PDF
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package	Original	FDMS3008SDC FDMS3008SDC	PDF
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 65 A, 2.6 mΩ Features Dual CoolTM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package	Original		PDF
Contextual Info: N-Channel Dual CoolTM PowerTrench SyncFETTM 30 V, 49 A, 2.6 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package	Original		PDF
FDMS7650DC Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package	Original		PDF
FDMS7650DC Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 0.99 mΩ Features Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package	Original	FDMS7650DC FDMS7650DC	PDF
Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 40 A, 6.25 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild process. Semiconductor’s advanced PowerTrench® Advancements in both silicon and Dual CoolTM package	Original		PDF
Contextual Info: N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 100 A, 0.99 mΩ Features ̈ Dual Cool TM General Description This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package	Original		PDF
FDS4897C Abstract: Q1/KIA6402P Contextual Info: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS4897C FDS4897C Q1/KIA6402P	PDF
FDS4885C Abstract: 40v 7.5a P-Channel N-Channel Contextual Info: FDS4885C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS4885C FDS4885C 40v 7.5a P-Channel N-Channel	PDF
CBVK741B019 Abstract: F011 F63TNR F852 FDS8958A L86Z Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A CBVK741B019 F011 F63TNR F852 FDS8958A L86Z	PDF
FDS8960C Contextual Info: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8960C FDS8960C	PDF
FDS8958A Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A FDS8958A	PDF
Contextual Info: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958 FDS8958 AN-4143: FAN7310) AN-6016: AN-6016 FAN7311) NF073	PDF

FDS8962C Contextual Info: FDS8962C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8962C FDS8962C	PDF
FDS8958A Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A FDS8958A	PDF
FDS8958A Abstract: 58q2 Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A FDS8958A 58q2	PDF
FDS8960C Abstract: Dual n Dual N & P-Channel Contextual Info: FDS8960C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8960C FDS8960C Dual n Dual N & P-Channel	PDF
FDS4895C Abstract: PD-46 Contextual Info: FDS4895C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS4895C FDS4895C PD-46	PDF
Contextual Info: FDS4897C Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS4897C	PDF
fds8958 Contextual Info: FDS8958 Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958 fds8958	PDF
FDS8958 Abstract: FDS8958A FDS8958A-F085 Contextual Info: FDS8958A_F085 tm Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A FDS8958 FDS8958A-F085	PDF
Contextual Info: FDS8958A Dual N & P-Channel PowerTrench MOSFET General Description Features These dual N- and P-Channel enhancement mode power field effect transistors are produced using Fairchild Semiconductor’s advanced PowerTrench process that has been especially tailored to minimize	Original	FDS8958A	PDF
Contextual Info: FDMS3016DC N-Channel Dual CoolTM PowerTrench MOSFET 30 V, 49 A, 6.0 mΩ General Description Features ̈ Dual Cool TM This N-Channel MOSFET is produced using Fairchild Semiconductor’s advanced PowerTrench® process. Advancements in both silicon and Dual CoolTM package	Original	FDMS3016DC	PDF

DUAL N-CHANNEL POWERTRENCH MOSFET Search Results

DUAL N-CHANNEL POWERTRENCH MOSFET Result Highlights (5)

DUAL N-CHANNEL POWERTRENCH MOSFET Datasheets Context Search

FDMS7650DC

FDMS7650DC

FDMS7650DC

FDS4897C

FDS4885C

CBVK741B019

FDS8960C

FDS8958A

FDS8962C

FDS8958A

FDS8958A

FDS8960C

FDS4895C

fds8958

FDS8958