DUAL P-CHANNEL 30V DS MOSFET Search Results

Contextual Info: Advanced Power Electronics Corp. AP2625GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs BV DSS Low Gate Charge D2 D1 Low Gate Drive -30V R DS ON 185mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description S2

Contextual Info: Advanced Power Electronics Corp. AP2623GY-HF-3 Dual P-channel Enhancement-mode Power MOSFET Independent, Symmetrical Dual MOSFETs Low Gate Charge D2 D1 Low On-resistance BV DSS -30V R DS ON 170mΩ ID RoHS-compliant, halogen-free -2A G2 G1 S1 Description

Contextual Info: DMP3028LSD 30V DUAL P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Description • • • • • • This new generation MOSFET has been designed to minimize the onstate resistance RDS(ON and yet maintain superior switching Mechanical Data V(BR)DS

Full-bridge inverter

Abstract: SSM9930M
Contextual Info: SSM9930M DUAL N- AND DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement Low on-resistance Full-bridge applications, such as N-CH P2G N2D/P2D P1S/P2S P1G LCD monitor inverter N1D/P1D SO-8 30V R DS ON 33mΩ 6.3A ID N2G N1S/N2S BV DSS P-CH

4957agm

Contextual Info: Advanced Power Electronics Corp. AP4957AGM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 26mΩ Fast Switching Performance ID -7.4A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2

4957gm

Contextual Info: Advanced Power Electronics Corp. AP4957GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low On-resistance R DS ON 24mΩ Fast Switching Performance ID -7.7A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1

STS3DPF30L

Contextual Info: STS3DPF30L DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DPF30L • ■ ■ V DSS R DS on ID 30 V < 0.16 Ω 3A TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

SSM4957M

Abstract: ssm4957gm
Contextual Info: SSM4957 G M DUAL P-CHANNEL ENHANCEMENT-MODE POWER MOSFETS Simple drive requirement D2 Lower gate charge D1 D1 Fast switching characteristics SO-8 -30V BV DSS D2 G1 S1 R DS(ON) 24mΩ ID -7.7A G2 S2 Description D2 D1 Advanced Power MOSFETs from Silicon Standard provide the

DUAL P

Abstract: STS3DPF30L max8823
Contextual Info: STS3DPF30L  DUAL P - CHANNEL 30V - 0.145Ω - 3A SO-8 STripFET POWER MOSFET PRELIMINARY DATA TYPE STS3DPF30L • ■ ■ V DSS R DS on ID 30 V < 0.16 Ω 3 A TYPICAL RDS(on) = 0.145 Ω STANDARD OUTLINE FOR EASY AUTOMATED SURFACE MOUNT ASSEMBLY LOW THRESHOLD DRIVE

Contextual Info: Advanced Power Electronics Corp. AP4953GM-HF-3 Dual P-channel Enhancement-mode Power MOSFETs Simple Drive Requirement BVDSS -30V Low Gate Charge R DS ON 53mΩ Fast Switching Performance ID -5A RoHS-compliant, halogen-free D2 D1 G2 G1 Description S2 S1 Advanced Power MOSFETs from APEC provide the designer with

Contextual Info: SSG4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) TSSOP-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 4.5A - 30V 1 75 @VGS = - 5V 90 @VGS = - 4.5V 2 3 4 D (1) D (8`) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.

SSM4953

Contextual Info: SSM4953 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) RDS(ON) (mΩ) Max 7 6 5 60 @VGS = -10V -4.5A -30V SO-8 8 1 2 95 @VGS = -4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high density cell design for low R DS(ON). Rugged and reliable.

Contextual Info: SSM4931 Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 8 RDS(ON) (mΩ) Max 7 6 5 45 @VGS = - 10V - 5.5A - 30V 1 70 @VGS = - 5V 2 80 @VGS = - 4.5V 3 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON). G1 (2)

SSM4935

Contextual Info: SSM4935A Dual P-Channel Enhancement Mode MOSFET Product Summary VDS V ID (A) SO-8 RDS(ON) (mΩ) Max 8 7 25 @VGS = - 10V - 7.5A - 30V 45 @VGS = - 5V 1 2 3 60 @VGS = - 4.5V 6 5 4 D2 (5, 6) D1 (7, 8) FEATURES Super high dense cell design for low R DS(ON).

4953p

Abstract: AF4953P
Contextual Info: AF4953P Dual P-Channel 30-V D-S MOSFET „ Features „ General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack

4953P

Abstract: AF4953P mosfet 4953 SECT10
Contextual Info: AF4953P Dual P-Channel 30-V D-S MOSFET Features General Description -Low rDS(on) Provides Higher Efficiency and Extends Battery Life -Miniature SO-8 Surface Mount Package Saves Board Space -High power and current handling capability -Extended VGS range (±25) for battery pack

8SS138

Abstract: GFP80N03 SFB50N03 BS170 bss138 2N7002 60V SOT-23 Fet irfz44n
Contextual Info: MOSFETS - N CHANNEL BY VOLTAGE 20V Drain-Source Rated Trench G e n F e t Qg [nC l, Typ. Ros(on) [m n l Id Vgs = 2.5V Vgs = 4.5V [V] [A] Max Max V d s = 10V Vgs Vgs 4.5V 10V Config Package Page Dual SOT-363 - TN0205AD*'1 20 0.25 2500 2000 0.35 TN0200T

5a6 zener diode

Abstract: dual mosfet dip diode zener 6.2v 1w 10v ZENER DIODE 5A6 smd sot23 DG9415
Contextual Info: Subscriber Linecard Table of Contents DATA LINE, Ethernet. 3 DATA LINE, Optical

IRF7509PBF

Abstract: IRF7509 IRF P CHANNEL MOSFET IRF7501
Contextual Info: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 N-CHANNEL MOSFET

P-Channel mosfet 400v to220

Abstract: IGBT DRIVE 500V 300A 400V switching transistor 0,3A mosfet forklift Microwave Oven Inverter Control IC apec CT60AM-18B igbt 100a 150v ct60am Transistor Mosfet N-Ch 30V
Contextual Info: APEC '99 Trench-Gate Technology for The Next Generation of MOS Power Devices IEEE, APEC Conference 1999 Eric R. Motto Sr. Application Engineer Powerex Inc. Youngwood PA USA APEC '99 Introduction 1. The Trench Gate Structure, Development History and Advantages

Contextual Info: PD - 95397 IRF7509PbF HEXFET Power MOSFET Generation V Technology Ultra Low On-Resistance l Dual N and P Channel MOSFET l Very Small SOIC Package l Low Profile <1.1mm l Available in Tape & Reel l Fast Switching l Lead-Free Description l l S1 G1 S2 G2 N-CHANNEL MOSFET

STripFET

Abstract: STS3DPFS30L
Contextual Info: STS3DPFS30L P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on ID 30V <0.16Ω 3A SCHOTTKY IF(AV) V RRM V F(MAX) 3A 30V 0.51V SO-8 DESCRIPTION: This product associates the latest low voltage

STS3DPFS30L

Contextual Info: STS3DPFS30L  P - CHANNEL 30V - 0.13Ω - 3A S0-8 MOSFET PLUS SCHOTTKY RECTIFIER  STripFET PRELIMINARY DATA MAIN PRODUCT CHARACTERISTICS MOSFET V DSS R DS on 30V <0.16Ω 3A SCHOTTKY IF (A V) V RRM V F(M AX) 3A 30V 0.51V ID SO-8 DESCRIPTION: This product associates the latest low voltage

SSD2007

Abstract: LS125A mosfet n-channel 12 amperes Power MOSFET 50V 20A
Contextual Info: DUAL N-CHANNEL POWER MOSFET SSD2007 FEATURES • Extremely Lower R 8SOIC ds o ni • Improved inductive ruggedness • Fast switching times • Rugged polysilicon gate cell structure • Low input capacitance • Extended safe operating area • Improved high temperature reliability