DUAL VHF REPEATER Search Results

3SK131

Abstract: 3SK131-T2-A V12 P12449EJ2V0DS00 TC1508
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage

3SK131

Abstract: P12449EJ2V0DS00
Contextual Info: DATA SHEET SHEET DATA MOS FIELD EFFECT TRANSISTOR 3SK131 RF AMP. FOR VHF TV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4PIN MINI MOLD PACKAGE DIMENSIONS Unit: mm FEATURES • Suitable for use as RF amplifier in VHF TV tuner. +0.2 Gate1 to Source Voltage

MH-34B4B

Abstract: circuit diagram of smart home alarm system 108 to 174 mhz radio receiver 1750 Hz TONE Encoder MH-37A4B CTCSS Encoder/Decoder with Voice Signal Circuit CTCSS Encoder/Decoder how to build vhf tv transmitter block diagram of ct scanner cpu 222 DC/DC/DC
Contextual Info: VHF/UHF ULTRA-COMPACT DUAL-BAND TRANSCEIVER WITH WIDE BAND COVERAGE OPERATING MANUAL VERTEX STANDARD CO., LTD. 4-8-8 Nakameguro, Meguro-Ku, Tokyo 153-8644, Japan VERTEX STANDARD US Headquarters 10900 Walker Street, Cypress, CA 90630, U.S.A. International Division

Contextual Info: • DESCRIPTION The Fujitsu MB1511 is a single chip serial input PLL frequency synthesizer designed for VHF tuner and cellular telephone applications. It contains a 1.1 GHz dual modulus prescaler which enables pulse swallow function, and an analog switch to speed

3SK22

Abstract: 3SK222
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS • The Characteristic of Cross-Modulation is good. Unit: mm Embossed Type Taping

3SK246

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK246 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • PACKAGE DIMENSIONS Unit : mm The C haracteristic of C ross-M odulation is good.

Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G1247-0200 Previous: ADE-208-778 Rev.2.00 Aug. 10, 2005 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics; (PG = 27.6 dB typ. at f = 200 MHz)

Contextual Info: 3SK298 Silicon N-Channel Dual Gate MOS FET REJ03G0817-0300 Previous ADE-208-390A Rev.3.00 Aug.10.2005 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline RENESAS Package code: PTSP0004ZA-A

NEC k 1760

Abstract: UAA 146 3SK230 UAA 2001
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBµ (TYP.) @f = 470 MHz, GR = −30 dB

3SK242

Abstract: SK242
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK242 RF AMPLIFIER AND MIXER FOR VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS SUPER MINI MOLD FEATURES • Low Noise Figure : NF = 1.3 dB TYP. • High Power Gain : Gps = 24 dB TYP. f = 200 MHz

Contextual Info: 3SK297 Silicon N-Channel Dual Gate MOS FET REJ03G0816-0300 Previous ADE-208-389A Rev.3.00 Aug.10.2005 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline RENESAS Package code: PLSP0004ZA-A

Contextual Info: ASSP Serial Input PLL Frequency Synthesizer MB1511 • DESCRIPTION The Fujitsu MB1511 is a single chip serial input PLL frequency synthesizer designed for VHF tuner and cellular telephone applications. It contains a 1.1 GHz dual modulus prescaler which enables pulse swallow function, and an analog switch to speed

MOS TECHNOLOGY INC

Abstract: 3SK317 3SK317ZR-TL-E REV2008
Contextual Info: 3SK317 Silicon N-Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G1247-0200 Previous: ADE-208-778 Rev.2.00 Aug. 10, 2005 Features • Low noise characteristics; (NF = 1.0 dB typ. at f = 200 MHz) • High power gain characteristics; (PG = 27.6 dB typ. at f = 200 MHz)

3SK297

Abstract: 3SK297ZP-TL-E
Contextual Info: 3SK297 Silicon N-Channel Dual Gate MOS FET REJ03G0816-0300 Previous ADE-208-389A Rev.3.00 Aug.10.2005 Application UHF / VHF RF amplifier Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • Capable of low voltage operation Outline RENESAS Package code: PLSP0004ZA-A

3SK230

Abstract: U1A marking
Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS Unit: mm The Characteristic of Cross-Modulation is good. CM = 108 dBm (TYP.) @f = 470 MHz, GR = -30 dB

P10-58

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR 3SK230 RF AMP. FOR VHF/CATV TUNER N-CHANNEL SILICON DUAL-GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES PACKAGE DIMENSIONS The Characteristic of Cross-Modulation is good. Unit: mm CM = 108 dB // (TYP.) @ f = 470 MHz, G r = -3 0 dB

Contextual Info: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G0818-0300 Previous ADE-208-449A Rev.3.00 Aug.10.2005 Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline RENESAS Package code: PLSP0004ZA-A

3SK300

Abstract: 3SK300ZR-TL-E
Contextual Info: 3SK300 Silicon N Channel Dual Gate MOS FET UHF / VHF RF Amplifier REJ03G0818-0300 Previous ADE-208-449A Rev.3.00 Aug.10.2005 Features • Low noise figure. NF = 1.0 dB typ. at f = 200 MHz • High gain PG = 27.6 dB typ. at f = 200 MHz Outline RENESAS Package code: PLSP0004ZA-A

MB1511PFV

Abstract: Cristal MB1511 DS04-21309-4E
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21309-4E ASSP Serial Input PLL Frequency Synthesizer MB1511 • DESCRIPTION The Fujitsu MB1511 is a single chip serial input PLL frequency synthesizer designed for VHF tuner and cellular telephone applications. It contains a 1.1 GHz dual modulus prescaler which enables pulse swallow function, and an analog switch to

MB1511

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21309-2E ASSP Serial Input PLL Frequency Synthesizer MB1511 • DESCRIPTION The Fujitsu MB1511 is a single chip serial input PLL frequency synthesizer designed for VHF tuner and cellular telephone applications. It contains a 1.1 GHz dual modulus prescaler which enables pulse swallow function, and an analog switch to speed

MB1511

Abstract: MB1511PFV
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-21309-4E ASSP Serial Input PLL Frequency Synthesizer MB1511 • DESCRIPTION The Fujitsu MB1511 is a single chip serial input PLL frequency synthesizer designed for VHF tuner and cellular telephone applications. It contains a 1.1 GHz dual modulus prescaler which enables pulse swallow function, and an analog switch to

TH 2267

Contextual Info: DATA SHEET NEC MOS FIELD EFFECT TRANSISTOR 3SK222 RF AMPLIFIER FOR FM TUNER AND VHF TV TUNER N-CHANNEL Si DUAL GATE MOS FIELD-EFFECT TRANSISTOR 4 PINS MINI MOLD FEATURES • PACKAGE DIMENSIONS The C haracteristic of C ross-M odulation is good. Unit: mm CM = 92 dB /zTY P. @ f = 200 MHz, Gr = -3 0 dB

W574

Abstract: TFK 840 mag mount cellular antenna dual band blade antenna block diagram for amateur radio WR 137 antenna NMO470C WD30S WKG144 WT63
Contextual Info: When selecting a mobile antenna, there ate a number of factors to take into consideration that significantly effect the ultimate performance of the antenna Gain requirements, electrical type, ground plane availability vs. requirements, placement on vehicle temporaiyvs, permanent mounting,

GMSK AIS

Abstract: J2/CMX7161 CVSD demodulator
Contextual Info: CML Focus Products Products that are production-released and recommended for new designs CML Microcircuits CML has, in over 40 years of operation, grown to be a world-leader in the design, development and support of low-power analogue, digital and mixed-signal semiconductors for telecommunications and control systems