DUROID Search Results

Contextual Info: PHA3135-130M RADAR PULSED POWER MODULE 115, 130, 145 Watts, 3.1 - 3.5 GHz, 100 S Pulse, 10% Duty Rev 12/05/2005 OUTLINE DRAWING FEATURES • NPN Silicon Bipolar Transistor • Input and Output Matched to 50Ω • Duroid Circuit Board • Easily Combined for High Power Transmitters

VCC36

Contextual Info: /MÄCOM m an A M P company Radar Pulsed Power Module, 140W, 300^s, 10% Duty 2.7 - 3.1 GHZ PHA2731-140L V4.00 Features • • • • • NPN Silicon Power Transistors Input and Output Matched to 50Q Duroid Circuit Board Easily Combined For High Power Transmitters

Contextual Info: L-Band Uplink Power Module PHA1618-45 45 Watts, 1608-1628 MHz, 85 ms Pulse, 5% Duty Features • • • • • Outline Drawing Operation 1608-1628 MHz NPN Silicon Power Transistors TTL Compatible Burst Control Duroid Circuit Board 50 Ohms Input and Output Matched

GP 005

Abstract: Load VSWR tolerance PHA3135-130M VCC36
Contextual Info: Radar Pulsed Power Module, 115, 130, 145W, 100µs Pulse 3.1 - 3.5 GHz PHA3135-130M V4.00 Features ● ● ● ● ● NPN Silicon Power Transistor Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined for High Power Transmitters Plated Copper Flange

PHA3135-130M

Contextual Info: PHA3135-130M Radar Pulsed Power Module 115, 130, 145W, 3.1-3.5 GHz, 100 s Pulse, 10% Duty Outline Drawing Features • • • • • M/A-COM Products Released, 04 Feb 08 NPN silicon bipolar transistor Input and output matched to 50Ω Duroid circuit board

PHA2731-140L

Abstract: VCC36
Contextual Info: Radar Pulsed Power Module, 140W, 300µs, 10% Duty 2.7 - 3.1 GHz PHA2731-140L V4.00 Features ● ● ● ● ● NPN Silicon Power Transistors Input and Output Matched to 50Ω Duroid Circuit Board Easily Combined For High Power Transmitters Plated Copper Flange

plate DBM 01

Contextual Info: DOUBLE BALANCED MIXER MODEL ADX158L-2 Available as: ADX158L-2, .664 “x .964” flatpack ADX2 Duroid Mixer Features RF: 8 to 15 GHz LO: 8 to 15 GHz IF: DC to 1 GHz Conversion Loss: 5.5 dB Typical LO to RF Isolation: 30 dB Typical Electrical Specifications (1) :

PHA2731-140L

Abstract: VCC36
Contextual Info: PHA2731-140L Radar Pulsed Power Module, 140W, 300 µs, 10% Duty 2.7 - 3.1 GHz Rev. V4 Features • • • • • NPN Silicon Power Transistors Input and Output Matched to 50W Duroid Circuit Board Easily Combined For High Power Transmitters Plated Copper Flange

PHA3135-130M

Contextual Info: PHA3135-130M Radar Pulsed Power Module 115, 130, 145W, 3.1-3.5 GHz, 100 s Pulse, 10% Duty Outline Drawing Features • • • • • M/A-COM Products Released, 04 Feb 08 NPN silicon bipolar transistor Input and output matched to 50Ω Duroid circuit board

AD8313-EVAL

Abstract: AD8313 EVAL-AD8313EB sma 906 SMA pcb footprint Connector
Contextual Info: AD8313 Evaluation Board EVAL-AD8313EB BOARD DESCRIPTION Schematic and Layout Figure 5 shows the schematic of the evaluation board that was used to characterize the AD8313. Note that uninstalled components are drawn in as dashed. This is a 3-layer board signal, ground, and power , with a Duroid

DBX-3503

Abstract: DBY-3503M DBX-3503M GI05 Avantek dbx ic 3503M Avantek rf mixers
Contextual Info: Q DBX-3503M /H DBY-3503M /H Duroid Mixer .05 to 3 GHz Triple Balanced avantek FEATURES APPLICATIONS • Two Schottky Diode Quads • 50 MHz to 3 GHz RF and LO Bandwidth • 1 MHz to 3 GHz IF Bandwidth • 7 dB Conversion Loss/NF • 30 dB Isolation • Low VSWR, All Ports

DBX-158L

Abstract: Avantek dbx Avantek mixer DBX-158 DBX158 DBX-158L/M
Contextual Info: C avantek DBX-158L/M /H DBY-158L/M /H Duroid Mixer 8 to 15 GHz Double Balanced FEATURES APPLICATIONS • • • • • Low Cost 11.7 to 12.2 GHz Downconverter • Threat Warning Systems • Self Protection Jammers • Wideband Heterodyned Receivers Single Schottky Diode Quad

DBX-167

Abstract: Avantek dbx DBX16
Contextual Info: Q DBX-167L/M /H DBY-167L/M /H Duroid Mixer 7 to 16 GHz Double Balanced avantek FEATURES APPLICATIONS • • • • • 7 to 16 GHz Band Folding Applications • Narrowband, Low-Cost Applications • EW and ECM Systems • Wideband Heterodyned Receivers Single Schottky Diode Quad

NPN 1000w

Contextual Info: Ar f ì M m a n A M P co m pa n y Radar Pulsed Power Module, 150W, 100^s, 10% Duty 3.1 - 3.5 GHZ PHA3135-150M Features • • • • • NPN Silicon Pow er Transistors Input and O utput M atched to 50Q Duroid Circuit Board Easily Com bined For High Pow er Transmitters

DBX-184

Abstract: Avantek dbx 501B3 Avantek UT DBY-184LS/MS/HS DBX-184LS/MS/HS
Contextual Info: O avantek DBX-184LS/MS/HS DBY-184LS/MS/HS Duroid Mixer 4 to 18 GHz Double Balanced FEATURES APPLICATIONS • • • • • • 4 to 18 GHz Swept Frequency Applications • Optimized for Increased L to I Isolation • EW Systems • Wideband Heterodyned Receivers

DBX-824

Abstract: dbx824 Avantek+dbx+824M
Contextual Info: O DBX-824M/H DBY-824M/H Duroid Mixer 2 to 8 GHz Triple Balanced avan tek FEATURES • Two Schottky Diode Quads • .005 to 4.0 GHz IF Bandwidth • Up to +32 dBm Input Intercept Point APPLICATIONS • Up Conversion Applications that Require Wide Low Frequency

Contextual Info: 2729GN-270 Rev 2 2729GN – 270 270 Watts - 60 Volts, 100 s, 10% Radar 2700 - 2900 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2729GN-270 is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 14dB gain, 280 Watts of pulsed RF

Contextual Info: 2730GN-100L Rev 1 2730GN – 100L 100 Watts, 3 mS , 30%, +55 Volts 2700 - 3000 MHz GENERAL DESCRIPTION CASE OUTLINE 55-QP Common Source The 2730GN-100M is an internally matched, COMMON SOURCE, class AB GaN on SiC transistor capable of providing 11dB gain, 100 Watts of pulsed RF

BLS6G2731-120

Contextual Info: BLS6G2731-120; BLS6G2731S-120 LDMOS S-band radar power transistor Rev. 01 — 14 November 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 2.7 GHz to 3.1 GHz range. Table 1.

transistor d 1302

Abstract: smd transistor 927 smd transistor equivalent table Duroid 6006 sot922 radar circuit component
Contextual Info: BLS6G2933S-130 LDMOS S-band radar power transistor Rev. 02 — 18 June 2009 Preliminary data sheet 1. Product profile 1.1 General description 130 W LDMOS power transistor intended for radar applications in the 2.9 GHz to 3.3 GHz range. Table 1. Typical performance

BLS6G3135S-120

Abstract: BLS6G3135-120
Contextual Info: BLS6G3135-120; BLS6G3135S-120 LDMOS S-Band radar power transistor Rev. 02 — 29 May 2008 Product data sheet 1. Product profile 1.1 General description 120 W LDMOS power transistor intended for radar applications in the 3.1 GHz to 3.5 GHz range. Table 1. Typical performance

BLF6G22-45

Abstract: BLF6G22S-45 ROGERS DUROID
Contextual Info: BLF6G22S-45 Power LDMOS transistor Rev. 02 — 17 April 2008 Product data sheet 1. Product profile 1.1 General description 45 W LDMOS power transistor for base station applications at frequencies from 2000 MHz to 2200 MHz. Table 1. Typical performance RF performance at Tcase = 25 °C in a common source class-AB production test circuit.

NE76038

Abstract: uPC2710 uPC2721 AN1015 UPC2710T UPC2721GR low noise block down converter 1 henry INDUCTOR POWER AMPLIFIER CIRCUIT DIAGRAM 10000 L4* Low noise
Contextual Info: California Eastern Laboratories AN1015 APPLICATION NOTE Low Cost, High Performance Receiver For Wireless Applications INTRODUCTION down converter. The LNA was designed using a discrete low noise GaAs MESFET NE76038 with a matching structure made using discrete components. The NE76038 is fabricated

ferroxcube ferrite beads

Abstract: N15W N25W thomson microwave transistor 2N5946 N5946 TWX510 THOMSON-CSF electrolytic vk 200 N30W
Contextual Info: □4C D I 7 ^ 5 3 7 ' S G S-THOMSON T- ss - t t 00000^5 0 l > SSM S O L ID ST A T E M IC R O W A V E 2 N 5 9 4 6 ; !r THQMSON-CSF COMPONENTS CORPORATION I;Montgomeryvilie, PA 18936• 215 362-8500■ TWX510-661-7299 UHF C O M M U N IC A T IO N S T RA N SISTO R