DV 47 25V Search Results

SPW47N60C3

Abstract: 47n60c3
Contextual Info: SPW47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances

47n60C3

Abstract: SPW47N60C3 47N60 SDP06S60
Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances

47n60c3

Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
Contextual Info: SPW47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances

47N60

Abstract: 47N60S5 SPW47N60S5 P-TO247
Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

47N60S5

Abstract: SPW47N60S5
Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

47N60C2

Abstract: 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10
Contextual Info: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated

47n60c3

Abstract: SPW47N60C3 SDP06S60 617 300
Contextual Info: SPW47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

Contextual Info: TM UniFET FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Features Description • 44A, 250V, RDS on = 0.069Ω @VGS = 10 V • Low gate charge ( typical 47 nC) • Low Crss ( typical 60 pF) • Fast switching • Improved dv/dt capability These N-Channel enhancement mode power field effect

47N60C2

Abstract: SPW47N60C2 SDP06S60
Contextual Info: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated

47N60S5

Abstract: 47N60 SPW47N60S5 spw47n60
Contextual Info: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

APT77N60BC6

Abstract: APT77N60SC6
Contextual Info: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

APT38N60B

Abstract: max2849
Contextual Info: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

47n60C3

Abstract: 47N60C SPW47N60C3 SDP06S60
Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

APT53N60BC6

Contextual Info: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

APT38N60BC6

Abstract: APT38N60B
Contextual Info: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

47N10

Abstract: INFINEON PART MARKING SPB47N10 SPI47N10 SPP47N10
Contextual Info: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 RDS on 33 m
ID 47 A P-TO263-3-2 Type Package

47n60c3

Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated

47n60c3

Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
Contextual Info: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated

DD2030

Abstract: diode 53a APT53N60BC6 APT53N60B
Contextual Info: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

Contextual Info: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.

DV15

Abstract: Infineon CoolMOS APT30N60BC6 APT30N60B
Contextual Info: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.

N10L26

Abstract: IPP47N10SL-26 smd diode code marking 33A IPB47N10SL-26 IPI47N10SL-26 PG-TO263-3-2 n10l
Contextual Info: IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode  Logic Level 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 V RDS on 26 m
ID 47 A P-TO263-3-2

N1033 INFINEON

Abstract: n1033 IPB47N10S-33 IPP47N10S-33 25706 4525G IPI47N10S-33 PG-TO263-3-2
Contextual Info: IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 SIPMOS =Power-Transistor Product Summary Feature  N-Channel  Enhancement mode 175°C operating temperature  Avalanche rated  dv/dt rated 100 VDS P-TO262-3-1 V RDS on 33 m
ID 47 A P-TO263-3-2 P-TO220-3-1 • Green package (lead free)

st 7815

Abstract: MAX232-2 LM78L05acza
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