SPW47N60C3
Abstract: 47n60c3
Text: SPW47N60C3 Preliminary data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
SPW47N60C3
47n60c3
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47n60C3
Abstract: SPW47N60C3 47N60 SDP06S60
Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V • Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A • Ultra low effective capacitances
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60C3
SPW47N60C3
47N60
SDP06S60
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47n60c3
Abstract: SPW47N60C3 47N60 SDP06S60 tp 2116 Pulse-10
Text: SPW47N60C3 Preliminary data Cool MOS =Power Transistor Feature •=New revolutionary high voltage technology Product Summary • Ultra low gate charge VDS @ Tjmax 650 V •=Periodic avalanche rated RDS on 0.07 Ω • Extreme dv/dt rated ID 47 A •=Ultra low effective capacitances
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60c3
SPW47N60C3
47N60
SDP06S60
tp 2116
Pulse-10
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47N60
Abstract: 47N60S5 SPW47N60S5 P-TO247
Text: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60S5
P-TO247
Q67040-S4240
47N60S5
47N60
47N60S5
SPW47N60S5
P-TO247
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47N60S5
Abstract: SPW47N60S5
Text: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60S5
P-TO247
Q67040-S4240
47N60S5
47N60S5
SPW47N60S5
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47N60C2
Abstract: 2002-08-12 SPW47N60C2 47n60 SDP06S60 TID10
Text: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated
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SPW47N60C2
P-TO247
Q67040-S4323
47N60C2
47N60C2
2002-08-12
SPW47N60C2
47n60
SDP06S60
TID10
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47n60c3
Abstract: SPW47N60C3 SDP06S60 617 300
Text: SPW47N60C3 Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60c3
SPW47N60C3
SDP06S60
617 300
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Untitled
Abstract: No abstract text available
Text: TM UniFET FDP44N25 / FDPF44N25T 250V N-Channel MOSFET Features Description • 44A, 250V, RDS on = 0.069Ω @VGS = 10 V • Low gate charge ( typical 47 nC) • Low Crss ( typical 60 pF) • Fast switching • Improved dv/dt capability These N-Channel enhancement mode power field effect
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FDP44N25
FDPF44N25T
O-220
FDPF44N25T
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47N60C2
Abstract: SPW47N60C2 SDP06S60
Text: SPW47N60C2 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology Product Summary • Worldwide best RDS on in TO 247 VDS 600 V • Ultra low gate charge RDS(on) 0.07 Ω • Periodic avalanche rated ID 47 A • Extreme dv/dt rated
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SPW47N60C2
P-TO247
Q67040-S4323
47N60C2
47N60C2
SPW47N60C2
SDP06S60
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47N60S5
Abstract: 47N60 SPW47N60S5 spw47n60
Text: SPW47N60S5 Final data Cool MOS Power Transistor Feature • New revolutionary high voltage technology • Worldwide best RDS on in TO 247 VDS 600 V RDS(on) 0.07 Ω ID 47 A P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60S5
P-TO247
Q67040-S4240
47N60S5
47N60S5
47N60
SPW47N60S5
spw47n60
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APT77N60BC6
Abstract: APT77N60SC6
Text: APT77N60BC6 APT77N60SC6 600V COOLMOS 77A 0.041Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT77N60BC6
APT77N60SC6
O-247
APT77N60BC6
APT77N60SC6
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APT38N60B
Abstract: max2849
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
APT38N60B
max2849
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47n60C3
Abstract: 47N60C SPW47N60C3 SDP06S60
Text: SPW47N60C3 Final data Cool MOS Power Transistor VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A Feature • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60C3
47N60C
SPW47N60C3
SDP06S60
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APT53N60BC6
Abstract: No abstract text available
Text: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT53N60BC6
APT53N60SC6
O-247
APT53N60BC6
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APT38N60BC6
Abstract: APT38N60B
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
APT38N60B
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47N10
Abstract: INFINEON PART MARKING SPB47N10 SPI47N10 SPP47N10
Text: Preliminary data SPI47N10 SPP47N10,SPB47N10 SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 RDS on 33 m ID 47 A P-TO263-3-2 Type Package
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SPI47N10
SPP47N10
SPB47N10
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
SPP47N10
Q67040-S4183
47N10
47N10
INFINEON PART MARKING
SPB47N10
SPI47N10
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47n60c3
Abstract: SPW47N60C3 47N60 SDP06S60 47N60C
Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best R DS(on) in TO 247 • Ultra low gate charge P-TO247 • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60c3
SPW47N60C3
47N60
SDP06S60
47N60C
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47n60c3
Abstract: 47n60 Q67040-S4491 47N60C 47n60c3 infineon
Text: SPW47N60C3 Final data Cool MOS Power Transistor Feature VDS @ Tjmax 650 V RDS on 0.07 Ω ID 47 A • New revolutionary high voltage technology • Worldwide best RDS(on) in TO 247 P-TO247 • Ultra low gate charge • Periodic avalanche rated • Extreme dv/dt rated
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SPW47N60C3
P-TO247
Q67040-S4491
47N60C3
47n60c3
47n60
Q67040-S4491
47N60C
47n60c3 infineon
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DD2030
Abstract: diode 53a APT53N60BC6 APT53N60B
Text: APT53N60BC6 APT53N60SC6 600V COOLMOS 53A 0.070Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT53N60BC6
APT53N60SC6
O-247
DD2030
diode 53a
APT53N60B
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Untitled
Abstract: No abstract text available
Text: APT38N60BC6 APT38N60SC6 600V COOLMOS 38A 0.099Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D • Popular TO-247 or Surface Mount D3 package.
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APT38N60BC6
APT38N60SC6
O-247
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DV15
Abstract: Infineon CoolMOS APT30N60BC6 APT30N60B
Text: APT30N60BC6 APT30N60SC6 600V COOLMOS 30A .125Ω Super Junction MOSFET Power Semiconductors TO • Ultra Low RDS ON -2 47 D3PAK • Low Miller Capacitance • Ultra Low Gate Charge, Qg • Avalanche Energy Rated • Extreme dv/dt Rated D G S All Ratings per die: TC = 25°C unless otherwise specified.
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APT30N60BC6
APT30N60SC6
Operating020
DV15
Infineon CoolMOS
APT30N60BC6
APT30N60B
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N10L26
Abstract: IPP47N10SL-26 smd diode code marking 33A IPB47N10SL-26 IPI47N10SL-26 PG-TO263-3-2 n10l
Text: IPI47N10SL-26 IPP47N10SL-26, IPB47N10SL-26 SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode Logic Level 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 V RDS on 26 m ID 47 A P-TO263-3-2
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IPI47N10SL-26
IPP47N10SL-26,
IPB47N10SL-26
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
IPP47N10SL-26
PG-TO220-3-1
SP0002-25707
N10L26
N10L26
IPP47N10SL-26
smd diode code marking 33A
IPB47N10SL-26
IPI47N10SL-26
PG-TO263-3-2
n10l
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N1033 INFINEON
Abstract: n1033 IPB47N10S-33 IPP47N10S-33 25706 4525G IPI47N10S-33 PG-TO263-3-2
Text: IPI47N10S-33 IPP47N10S-33, IPB47N10S-33 SIPMOS =Power-Transistor Product Summary Feature N-Channel Enhancement mode 175°C operating temperature Avalanche rated dv/dt rated 100 VDS P-TO262-3-1 V RDS on 33 m ID 47 A P-TO263-3-2 P-TO220-3-1 • Green package (lead free)
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IPI47N10S-33
IPP47N10S-33,
IPB47N10S-33
P-TO262-3-1
P-TO263-3-2
P-TO220-3-1
IPP47N10S-33
PG-TO220-3-1
SP0002-25706
N1033
N1033 INFINEON
n1033
IPB47N10S-33
IPP47N10S-33
25706
4525G
IPI47N10S-33
PG-TO263-3-2
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st 7815
Abstract: MAX232-2 LM78L05acza
Text: A@b_hb 47 % &+$5* 75$16 (5 &$3$&,7$1&( 6(1625 ,& z $XWR FDOLEUDWLRQ RQ GHPDQG z 0XOWLVWDJH LQWHUQDO GLJLWDO ILOWHULQJ LQFOXGLQJ PHGLDQ ILOWHU z V PLQLPXP UHVSRQVH WLPH z QV WR V VHOHFWDEOH GULYH SXOVH ZLGWK z VWDJH FKDUJH FDQFHOODWLRQ IRU ODUJH ORDG FDSDFLW\
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