DV 6M Search Results

Contextual Info: F-2 1 1 -1 ^ LSS-120-03-L-DV-A a . LSS-130-02-L-DV-A LSS-130-02-L-DV-A-K LSS-140-01-L-D V -A HIGH SPEED HERMAPHRODITIC STRIP High Speed/High Density SPECIFICATIONS Audible click when properly mated Mates with: LSS Insulator Material: Black Liquid Crystal t o

M8513

Abstract: MA26W KB-362 M8513A-0 KB-262C4 1S464 KP4-8 M8513A-R 1S1212 1S467
Contextual Info: - ft m « tt £ PSM W 1S464 1S467 1S 1210 1S1211 1S1212 1S1300 1S1300 DS430 DV-2 DV-3 DV-4 DY-5 HSK23 HV23G HV123G KB— 469 KB— 162 KB-162C5B KB— 165 KB— 169 KB— 262 KB-262C4 KB-262M KB— 26 5 KB-265C4 KB—269 KB— 362 KB-362M KB— 365 KB— 369

99218

Abstract: POM7-256C Fluke 54200 HLE-115
Contextual Info: JULY 14, 1999 TEST REPORT #99218 QUALIFICATION TESTING HLE-115-Ol-L-DV TSM-115-04-L-DV SAMTEC CORPORATION APPROVED BY: MAX PEEL PRESIDENT AND DIRECTOR OF ADVANCED RESEARCH CONTECH RESEARCH, INC. L REVISION LEVEL DATE DESCRIPTION REVISION NO. - r INITIAL ISSUE

LQFP 216

Abstract: MN10300 216-pin ITU-R BT.656 to ieee1394 dv 6m REC656-IF compression mpeg 1 layer 2 MN673745 2600 dram
Contextual Info: New Mutual conversion of DV and MPEG 2 is easily realized with digitized data. DV-Codec LSI MN673745 with Built-in IEEE1394 Link Layer „ Overview 26.00 ±0.20 24.00 ±0.10 162 109 108 24.00 ±0.10 26.00 ±0.20 (1.40) 163 55 216 54 0.40 (1.40) 0.16 ±0.05

ITU-R BT.656 to ieee1394

Abstract: lsi mpeg LQFP 216 MN673745 mn103 dv 6m
Contextual Info: New Mutual conversion of DV and MPEG 2 is easily realized with digitized data. DV-Codec LSI MN673745 with Built-in IEEE1394 Link Layer „ Overview 26.00 ±0.20 24.00 ±0.10 162 109 108 24.00 ±0.10 26.00 ±0.20 (1.40) 163 55 216 1 54 0.40 (1.40) 0.16 ±0.05

marking 93A

Contextual Info: PD- 95350 IRFB9N30APbF HEXFET Power MOSFET l l l l l l Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of Paraleing Dynamic dv/dt Rated Simple Drive Requirements l Lead-Free D VDSS = 300V RDS on = 0.45Ω G ID = 9.3A S Description Third Generation HEXFETs from International Rectifier provide the designer

Contextual Info: F -212 LSS-120-03-L-DV-A LSS-130-02-L-DV-A-K 0,635mm .025" LSS-140-01-L -D V -A LS S S E R IE S v - HIGH SPEED HER MAPHRODITIC STRIP High Speed/High Density SPECIFICATIONS LSS Low cost Blade & „ Beam y ^ •j i contact For complete specifications and

KLH1540

Abstract: KLH1540A
Contextual Info: KLHl540/KLHl540A HIGH VOLTAGE, PHOTO 6MOS RELAY cosmo FEATURES • • • • • • • Normally Open,Single Pole Single Throw Control 350VAC or DC Voltage Switch 130mA Loads LED control Current, 5mA Low ON-Resistance dv/dt, >500V/ms Isolation Test Voltage, 3750VACrms

Contextual Info: Axial Leaded Capacitors _ Metallized Polypropylene Dielectric •MKP Tape Wrapped and Epoxy Endsealed Insulation Resistance MegOhms x MicroFarads Need Not Exceed MegOhms Test Voltage Measured after 1 minute of electrification. dv/dt Rated

55n03

Abstract: MOSFET 55N03 ir 55n03 MTN55N03J3 DSA006750
Contextual Info: Spec. No. : C411J3 Issued Date : 2007.07.05 Revised Date : 2009.02.04 Page No. : 1/7 CYStech Electronics Corp. N-Channel Enhancement Mode Power MOSFET MTN55N03J3 BVDSS ID RDSON 25V 55A 6mΩ Features • Dynamic dv/dt Rating • Simple Drive Requirement • Repetitive Avalanche Rated

ICX080AK

Abstract: CM500S CXD1267AN 5fsc
Contextual Info: ICX080AK Diagonal 6mm Type 1/3 CCD Image Sensor for NTSC Color Video Cameras Description The ICX080AK is an interline CCD solid-state image sensor suitable for NTSC color video cameras. This chip conforms to DV standard SD mode, and has the optimal number of pixels for

Contextual Info: HE D I 4055452 G O G ^ a a | Data Sheet No. PD-9.513B INTERNATIONAL RECTIFIER _ INTERNATIONAL RECTIFIER I R T -39-23 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRFAC30 IRFAC32

Contextual Info: REVISION A DESIGNED & DIMENSIONED IN MILLIMETERS[INCHES] FT5-XX-XX.X-X-DV-XX-X-TR C C DO NOT SCALE FROM THIS PRINT 14 0.50 .020 TYP LEAD STYLE -01.0: 1MM -03.0: 3MM *-06.0: 6MM *-08.0: 8MM *-10.0: 10MM 02 "A" PACKAGING -TR: TAPE & REEL (SEE NOTES 3,4,5 & 6)

CM500S

Abstract: CXD1267AN ICX081AK
Contextual Info: ICX081AK Diagonal 6mm Type 1/3 CCD Image Sensor for PAL Color Video Cameras Description The ICX081AK is an interline CCD solid-state image sensor suitable for PAL color video cameras. This chip conforms to DV standard SD mode, and has the optimal number of pixels for MPEG2 Main

2N7261U

Abstract: IRHE7130 2N7261 equivalent IRHE8130 JANSH2N7261U JANSR2N7261U
Contextual Info: PD - 91806A REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR IRHE7130 IRHE8130 JANSR2N7261U JANSH2N7261U N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

2N7261

Abstract: 2N7261 equivalent reverse bias diode characterstics IRHF7130 IRHF8130 JANSH2N7261 JANSR2N7261
Contextual Info: PD - 90653B IRHF7130 IRHF8130 JANSR2N7261 JANSH2N7261 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR N CHANNEL 100Volt, 0.18Ω Ω , MEGA RAD HARD HEXFET International Rectifier’s RAD HARD technology HEXFETs demonstrate excellent threshold voltage

IRLP2505

Abstract: IRFPE30
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLP2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRL2505

Abstract: IRF1010
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRL2505 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

IRFPE30

Abstract: IRLP3803 GD4000
Contextual Info: Previous Datasheet Index Next Data Sheet PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated

Contextual Info: PD - 91433A IRHNA9160 IRHNA93160 REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTOR P-CHANNEL RADHARD W , RAD HARD HEXFET -100 Volt, 0.068W International Rectifier’s P-Channel RAD HARD technology HEXFETs demonstrate excellent threshold voltage stability

Contextual Info: Axial leaded Capacitors Metallized Polypropylene Dielectric - M K P Tape Wrapped and Epoxy Endsealed Insulation Resistance MegOhms x MicroFarads Need Not Exceed MegOhms Test Voltage > 30,000 100,000 100 VDC Measured after 1 minute of electrification. dv/dt

Contextual Info: Output Filters FN 510 Output Filter for Motor Drives Reduction of drive output voltage dv/dt Approvals Restriction of overvoltages on motor cables Reduction of motor temperature Increase of motor service life Improvement of system reliability Technical specifications

NTE2379

Contextual Info: NTE2379 MOSFET N–Channel, Enhancement Mode High Speed Switch Features: D Dynamic dv/dt Rating D Repetitive Avalanche Rated D Fast Switching D Ease of Paralleling D Simple Drive Requirements Absolute Maximum Ratings: Gate–Source Voltage, VGS . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . ±20V

MOSFET 20V 120A

Abstract: IRFPE30 IRLP3803 ISD71A
Contextual Info: PD - _ IRLP3803 PRELIMINARY HEXFET Power MOSFET Logic-Level Gate Drive Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fast Switching Fully Avalanche Rated Description VDSS = 30V RDS on = 0.006Ω