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4R3TI30Y-080

Abstract: T151 u1490
Contextual Info: 4R3TI30Y-080 S ± / ' 9 - je ^ zl- ; p DIODE and TYRISTOR MODULE •¡KfJa : Features • Glass Passivation Chip • f i g E a s y Connection • Insulated Type • di/dt W S * V '^: # I ' Large di/dt • dv/dt l i £u Large dv/dt : Applications • • '< "j f- U —

hb2 dc12v

Abstract: HB2-0 E53-CN03N
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6044ST

Abstract: d2222 dpsol E4343
Contextual Info:  !     600 nA, Rail-to-Rail Input/Output Op Amps HDWXUHV 'HVFULSWLRQ ‡ ‡ ‡ ‡ ‡ ‡ ‡ ‡ 7KH 0&3 IDPLO\ RI RSHUDWLRQDO DPSOLILHUV IURP 0LFURFKLS 7HFKQRORJ\ ,QF RSHUDWH ZLWK D VLQJOH VXSSO\ YROWDJH DV ORZ DV 9 ZKLOH GUDZLQJ OHVV WKDQ

63B50

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C2099

Contextual Info: Single Hole Fixing Receptacles 8:$# 95*%08:$# BS9522 - F0017 - C2099 6LQJOH#KROH#PRXQWLQJ#ZLWK#SODLQ#VKHOO#IRU# GLUHFW#ZLULQJ#WR#H[SRVHG#VROGHU#EXFNHWV1# +DV#SDQHO#*2*#ULQJ#VHDO1# Shell Size A max 08 0.978 24.84 0.978 24.84 0.978 24.84 0.978 24.84 0.978 24.84

Contextual Info: Data Sheet No. PDh5.022A International I R Rectifier IR2130D 3-PHASE BRIDGE Features •Hermetic ■Floatingchanneldesignedforbootstrap operation Fully operational to +400V Tolerant to negative transient voltage dV/dt immune ■ Gate drive supply range from 10 to 20V

16TTS12

Contextual Info: International IQR Rectifier 5 Phase Control SCR •’.NNiVïuy.utr VKRM/ Part Humber •tsm VDRM ■RMS V (A) *T(AV) @ Ï£ (A) (■) (A) (°q (b) (A) VGT (V) 1GT % (A) Fax Case on Demand Outline (A) (V/Ais) (°C/W) Noteî Number Key @*TM dv/dt RQIC(DC)

til 31a

Abstract: h196 H199 IRHM7130 IRHM8130 EO 28b H202
Contextual Info: Data Sheet No. PD-9.707A INTERNATIONAL RECTIFIER REPETITIVE AVALANCHE AND dv/dt RATED HEXFET TRANSISTORS IRHM7130 o r IRHM8130 N-CHANNEL MEGA RAD HARD 100 Volt, 0.18Q, MEGA RAD HARD HEXFET Product Summary International Rectifier’s MEGA RAD HARD Technology HEXFETs

MS3113H

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Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ H-Bridge Topology in ECO-PAC 2 N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 E10 P 18 R 18 NTC Preliminary data sheet L9 K 13 F10 X 15

Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 K 12 A1 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18

60-01P1

Abstract: eco-pac
Contextual Info: VKM 60-01P1 HiPerFETTM Power MOSFET H-Bridge Topology in ECO-PAC 2 ID25 = 75 A VDSS = 100 V Ω RDSon = 25 mΩ N-Channel Enhancement Mode High dv/dt, Low trr, HDMOSTM Family trr < 200 ns L4 L6 A1 K 12 L9 E10 P 18 R 18 NTC K 13 F10 X 15 K10 T 18 V 18 X 18

mlt 22

Abstract: MCT thyristor k 3918 regulator Dual supply voltage regulator for 30vpp HIP2030 igbt subcircuit MOS Controlled Thyristor AN9408 HIP2030EVAL TLP2601
Contextual Info: No. AN9408.2 Intersil Intelligent Power November 1994 The HIP2030 MCT/IGBT Gate Driver Provides Isolated Control Signals To Switch Power Devices Author: J. K. Azotea Introduction The Intersil Fiber-Optic Isolated Gate Driver HFOIGD is designed to operate reliably at high isolation voltages, dv/dt’s,

E3X-CN22

Abstract: E3X-DA44V E3X-DA14V E3X-DA8
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2N7236 JANTX

Abstract: 2N7236 mosfet K 1377
Contextual Info: Data Sheet No. PD-9.495D INTERNATIONAL RECTIFIER IO R REPETITIVE AVALANCHE RATED AND dv/dt RATED HEXFET TRANSISTOR IRFM914Q 2N 7236 JANS2N7236 JANTX2N7236 JANTXV2N7236 [REF: M IL-S-1S500/5S5] -100 Volt, 0.20 Ohm HEXFET Product Summary The HEXFET® technology is the key to International