DW 084 Search Results

FLDWC0311-20-9

Abstract: UL 3584
Contextual Info: 9-Wire & Cable 30/9/02 11:19 am Page 52 FlexLite DW Dual-wall primary wire Applications FlexLite DW FLDW offers a high-performance non melting insulation suitable for a variety of applications, especially those with occasional hightemperature excursions, such as high-power

d-sub15

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H230

Abstract: 15PIN HD-22 15MAY09
Contextual Info: 4 THIS DRAWING IS UNPUBUSHED. COPYRIGHT 2009 I | RELEASED FOR PUBLICATION BY TYCO ELECTRONICS CORPORATION. ^ 3 I 1 1 AUG ¿0 0 6 . LOC RIGHTS RESERVED- Dl ST DW REVISIONS LTR A DATE DUN APVD 15M A Y09 SC WK DESCRIPTION REVISED EC R — 0 9 — 01 0844 , OBSOLETE - 2

Contextual Info: SN74CBTD3861 10-BIT FET BUS SWITCH WITH LEVEL SHIFTING S C D S 084-JU LY 1998 5-0 Switch Connection Between Two Ports DBQ, DGV, DW, OR PW PACKAGE TOP VIEW TTL-Compatible Input Levels Designed to Be Used in Level-Shifting Applications NC [ 1 U A1[ 2 24 ] V CC

UL 3584

Contextual Info: Commercial Wire Family FlexLite DW Dual-Wall Primary Wire Product Facts • UL rated operating temperature to 125°C [257°F] ■ Non melting insulation material ■ Thin-wall product for size and weight savings ■ Excellent chemical resistance ■ Dual-wall construction for

S9019

Abstract: S90132 header 2x5 88099-101 str 50 092
Contextual Info: JL JL PRODUCT NO SEE TAB LE -DIM Y REF2,0 *0,1 NON ACCUM DIM X ±0,2 ON TIP ±0,13 ON BASE •N O T E POS 2,0 *0,1 - • & ^ * 0,13 - 1 ECR S80278 BS LOW BY 09DEC98 DU ECR S90001 BS LOW 07JAN99 DV ECR S90031 BS LOW 15MAR99 DW ECR S90050 BS LOW 31MAR99 DX

Contextual Info: I CO ST. DW 6. ./65 Mf X. .3 4-0 MAX, -— — - . 0 0 + - At/A/. M ATERIAL'. COPPLR PLA TIN G : £l £C TR o TIN h//#e s/ze; ifc-14 a u g 1 REVISION 1 B s jf U INCORPORATED TITLE: K fim p T U E p a r a l l e l s p l ic e CLEVELAND, OHIO DIMBKIONAL TOLERANCE

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GP 703

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GP 703

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Contextual Info: T NE T A1 545 D U A L D I F F E R E N T I A L P S E U D O - E C L TO EC L T R A N S L A T O R S A N D D U A L D I F F E R E N T I A L EC L TO P S E U D O - E C L T R A N S L A T O R S SDNS005B-SEPTEM BER 1 9 9 3 - REVISED OCTOBER 1995 DW P A C K A G E Dual ECL to P s e u d o - E C L and P s e u d o - E C L

SN74CBTD3861

Abstract: A7817 ix35 IX-35
Contextual Info: SN74CBTD3861 10-BIT FETBUS SWITCH WITH LEVEL SHIFTING S C D S 084A - JU LY 1 998 - REVISED O C TO B ER 1998 TTL-Compatible Input Levels Designed to Be Used in Level-Shifting Applications • NC [ 1 A3 [ 4 ] V CC 23 ] OE 22 ] B1 21 ] B2 A4 [ 5 20 ] B3 A5 [ 6

voltage regulator sot-89-5

Abstract: EA-084-0204
Contextual Info: 5;B GRF 800mA LDO REGULATOR NO. EA-084-0204 5[ 6(5,(6 OUTLINE 7KH 5 6HULHV DUH &026EDVHG SRVLWLYH YROWDJH UHJXODWRU ,&V 7KH 5 6HULHV KDYH IHDWXUHV RI KLJK ULSSOH UHMHFWLRQ ORZ GURSRXW YROWDJH KLJK RXWSXW YROWDJH DFFXUDF\ ORZ FRQVXPSWLRQ FXUUHQW (DFK RI WKHVH ,&V FRQVLVWV RI D

STK 795 820 english

Abstract: sine wave inverter circuit diagram pa56c LADR2 026E3 uPD78366A 00116h 0348a stk 490 110 uPD78361A
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

HM62W256

Abstract: HM62W256LFP-5SLT HM62W256LFP-7SLT HM62W256LFP-7T HM62W256LFP-7ULT HM62W256LFP-8SLT HM62W256LT-7 HM62W256LT-7SL HM62W256LT-8SL HM62W256LTM-7
Contextual Info: HM62W256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM ADE-203-084G Z Rev. 7.0 Jun. 19, 1995 Features • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 55/70/85 ns (max)

HM62W256

Abstract: HM62W256LFP-7ULT HM62W256LFP-5SLT HM62W256LFP-7SLT HM62W256LFP-7T HM62W256LFP-8SLT HM62W256LT-7 HM62W256LT-7SL HM62W256LT-8SL HM62W256LTM-7
Contextual Info: HM62W256 Series 32,768-word x 8-bit Low Voltage Operation CMOS Static RAM ADE-203-084G Z Rev. 7.0 Jun. 19, 1995 Features • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 55/70/85 ns (max)

HM62W256

Abstract: HM62W256LFP-5SLT HM62W256LFP-7SLT HM62W256LFP-7T HM62W256LFP-7ULT HM62W256LFP-8SLT HM62W256LT-7 HM62W256LT-7SL HM62W256LT-8SL HM62W256LTM-7
Contextual Info: HM62W256 Series 256 k SRAM 32-kword x 8-bit ADE-203-084H (Z) Rev. 8.0 Nov. 1997 Features • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 55/70/85 ns (max) • Low power Standby: 0.33 µW (typ)

0938E

Abstract: NEC PA53C 0828C UAA 267 0348AH uPD78361A uPD78362A uPD78363A uPD78365A uPD78366A
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

HM62W256

Abstract: HM62W256LFP-5SLT HM62W256LFP-7SLT HM62W256LFP-7T HM62W256LFP-7ULT HM62W256LFP-8SLT HM62W256LT-7 HM62W256LT-7SL HM62W256LT-8SL HM62W256LTM-7
Contextual Info: HM62W256 Series 256 k SRAM 32-kword x 8-bit ADE-203-084H (Z) Rev. 8.0 Nov. 1997 Features • Low voltage operation SRAM Operating Supply Voltage: 3.0 V to 3.6 V • 0.8 µm Hi-CMOS process • High speed Access time: 55/70/85 ns (max) • Low power Standby: 0.33 µW (typ)